1014-6A ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Tadd Bryan
- PDF pages: 1
Technical content
6 Watts, 28 Volts, Class C
The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 w atts of C W RF Output power acro ss t he 1 000-1400 M Hz ban d. This tran sistor is sp ecifically designed f or microwave b roadband applications. It u tilizes g old metalization an d diffused ballastin g to p rovide h igh reli ability and superior ruggedness. CASE OUTLINE 55LV-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25°C 1 9 W Maximum Voltage and Current Collector to Base Voltage (BVces) 5 0 V Emitter to Base Voltage (BVebo) 3. 5 V Collector Current (Ic) 1 .0 A Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature +200 °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Output F = 1150 MHz 6.0 W Pin Power Input 1.2 W Pg Power Gain Vcc = 35 Volts 7.0 7.5 dB ηc Collector Efficiency 40 % VSWR Load Mismatch Tolerance Pulse width = 20 µs LTDF = 1% 10:1 FUNCTIONAL CHARACTERISTICS @ 25°C BVebo Emitter to Base Breakdown Ie = 3.0 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 25 mA 50 V Icbo Collector Leakage Current Vcb = 28 V 1.0 mA Cob Capacitance Vcb = 28 V, f = 1 MHz 6.5 pF hFE DC – Current Gain Vce = 5V, Ic = 100 mA 20 100 θjc1 Thermal Resistance 9.0 °C/W GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECTLY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120