1014-2 MICROSEMI | Alldatasheet
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Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. GENERAL DESCRIPTION The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input prematching and utilizes gold metalization and diffused ballasting to provide high reliagility and supreme ruggedness. CASE OUTLINE 55LT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 9.7 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 0.5 A Maximum Temperatures Storage Temperature - 65 to +150 oC Operating Junction Temperature +200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg η c VSWR1 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F =1000-1400 MHz Vcb = 28 Volts As Above Pout = 2 Watts 7.5 0.35 10:1 Watt Watt dB BVces BVebo Icbo h FE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance Ic = 20 mA Ie = 5 mA Vcb = 28 Volts Vce = 28 V, Ic = 100 mA Vcb = 25 V, f = 1 MHz Tc = 25oC 3.5 0.5 100 4.5 Volts Volts mA pF oC/W Rev B, Jan 2009 1014 - 2