STB7101 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
1/5January, 22 2002 STB7101 0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER SOT323-6L (SC70) ORDER CODE STB7101 BRANDING 101 (Bottom View) 101 (Top View) PIN CONNECTION Pin No. Pin Name 1G N D 2G N D
3 INPUT
6 OUTPUT
- OPERATING FREQUENCY 900-1900MHz
- OUTPUT POWER 9.8dBm typ. @ 900MHz 7.5dBm typ. @ 1900MHz
- POWER GAIN G P = 20.3dB typ. @ 900MHz G P = 20.5dB typ. @ 1900MHz
APPLICATIONS
PA driver for cellular applications
DESCRIPTION
The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD package SOT323-6L. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value Unit Vcc Supply voltage Ta = +25 oC, pin 4 and 6 4.5 V Tstg Storage temperature -55 to +150 oC Ta Operating ambient temperature -40 to +85 oC Pin Input power Ta= +25 oC 10 dBm
ELECTRICAL CHARACTERISTICS (T a = +25oC, Vcc = 2.75V, ZL = Zs = 50Ω, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Vcc Supply voltage 2.6 2.75 3.3 V Icc Circuit current No signal 28 mA G p Power Gain f = 0.9GHz f = 1.9GHz 20.3 20.5 dB NF Noise figure f = 0.9GHz f = 1.9GHz 4.5 dB P1dB Output 1dB Compr. Power f = 0.9GHz f = 1.9GHz 9.8 7.5 dBm RL IN Input return loss f = 0.9GHz f = 1.9GHz 6.2 dB RL OUT Output Return loss f = 0.9GHz f = 1.9GHz 9.7 9.7 dB S12 Isolation f = 0.9GHz f = 1.9GHz -34 -33 dB Po(Sat) Saturated output power level f = 0.9GHz f = 1.9GHz 11.3 9.7 dBm OIP3 Output Third Order Intercept f = 0.9GHz f = 1.9GHz 16.5 14.9 dBm TYPICAL EVALUATION CIRCUIT Evaluation circuit components C1 = C2 = C3 = 27pF C4 = 10nF L1 = 15nH L2 = 33nH GND GND2 INPUT Vcc GND 5 OUTPUT STB7101 27p RF IN 15n C2 27p RF OUT L2 33 n 27p 10n VCC (+2.75V)
Insertion Power Gain versus Frequency 800 1000 1200 1400 1600 1800 2000 Frequency (MHz)
24 Insertion Power Gain (dB)
Noise Figure versus Frequency 800 1000 1200 1400 1600 1800 2000 Frequency (MHz)
7 NF (dB)
Power Gain versus Output Power @ 1900 MHz - 1 0 - 8 - 6 - 4 - 2 02468 1 00 Output Power (dBm)
24 Power Gain (dB)
Isolation versus Frequency 800 1000 1200 1400 1600 1800 2000 Frequency (MHz) -50 -40 -30 -20 -10 Isolation (dB) Circuit Current versus Supply Voltage 0 0.5 1 1.5 2 2.5 3 3.50 Vcc (V) 40Icc (mA) Power Gain versus Output Power @ 900 MHz -10 -8 -6 -4 -2 0 2 4 6 8 10 120 Output Power (dBm) TYPICAL PERFORMANCE (T a = +25 oC, Vcc = 2.75V, unless otherwise specified)
MIN. TYP . MAX MIN. TYP. MAX A 0.8 1.1 0.031 0.043 A1 0 0.1 0 0.004 A2 0.8 1 0.0031 0.039 b 0.15 0.3 0.006 0.012 c 0.1 0.18 0.004 0.007 D 1.8 2.2 0.071 0.088 E 1.15 1.35 0.045 0.59 e 0.65 0.025 H 1.8 2.4 0.071 0.094 Q 0.1 0.4 0.004 0.016 DIM.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com