CFRMT101-HF COMCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
-Tiny plastic SMD package. -High current capability. -High surge current capability. -Glass passivated chip junction. -Excellent power dissipation offers better reverse leakage current and thermal resistance. -Lead-free parts meet RoHS requirments. VR=VRRM TJ=100°C Max. Reverse recovery time (note 1) TRR 150 ns500 -Fast switching for high efficiency. Note 1. Reverse recovery time test condition,IF=0.5A,IR=1.0A,IRR=0.25A Max. Forward rectified current Ambient temperature=55°C 250 Low Profile SMD Fast Recovery Rectifiers Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free -Low profile package is 40% thinner than standards SOD-123. Mechanical data -Case: Molded plastic, SOD-123H/MINI SMA -Terminals: Solderable per MIL-STD-750, Method 2026. -Polarity: Indicated by cathode band. -Weight: 0.011 grams approx. -Mounting Position: any -Epoxy: UL94-V0 rated flame retardant.
REV: A Comchip Technology CO., LTD. Rating and Characteristic Curves (CFRMT101-HF Thru. CFRMT107-HF) Fig.2- Typical Forward Characteristics ΙF, Forward Current, (A)Instantaneous VF, Forward Voltage (V) 0.6 Fig.5- Typical Junction Capacitance CJ, Junction Capacitance, (pF) VR, Reverse Voltage, (V) 0.01 1 100 2.0 Fig.1- Typical Forward Current IO, Average Forward Current, (A) TA, Ambient Temperature (°C) 0.8 1.4 0.6 0 175100 0.01 1.0 100 0.1 0.8 0.2 1.2 1.4 0.4 50 125 1.0 1.2 1.0 O TJ=25 C Pulse width=300μs 1% duty cycle 0.1 10 15025 75 Fig.4- Maximum Non-repetitive Forward Surge Current IFSM, Peak Forward Surge Current, (A) Number of Cycles at 60Hz 1 10 100 O TJ=25 C 8.3ms single half sine wave, JEDEC method SMD Diodes Specialist Derating Curve 1.6 1.8 Single phase, half wave, 60Hz, resistive or inductive load (+) (+) 25Vdc (approx.) ( ) ( ) PULSE GENERATOR (NOTE 2) OSCILLISCOPE (NOTE 1) NON- INDUCTIVE W NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. D.U.T. NONINDUCTIVE NONINDUCTIVE W W +0.5A -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm trr Fig.3- Test Circuit Diagram and Reverse Recovery Time Characteristics Low Profile SMD Fast Recovery Rectifiers
REV: A Comchip Technology CO., LTD. SMD Diodes Specialist Reel Taping Specification QW-BU002 Index hole o 120 Trailer Device Leader 10 pitches (min)10 pitches (min) d E F B W A P D1 D2 D T C Direction of Feed B C d D D2D1 SOD-123H SYMBOL A (mm) (inch) 2.440 MIN. 4.00 ± 0.10 178 ± 2.00 SYMBOL (mm) E F P P0 P1 W W1 1.75 ± 0.10 0.069 ± 0.004 3.50 ± 0.10 0.138 ± 0.004 SOD-123H 2.00 ± 0.10 0.079 ± 0.004 3.85 ± 0.10 0.152 ± 0.004 1.10 ± 0.10 0.043 ± 0.004 0.23 ± 0.10 T 0.009 ± 0.004 0.315 ± 0.012 Low Profile SMD Fast Recovery Rectifiers
REV: A Comchip Technology CO., LTD. SMD Diodes Specialist QW-BU002 CFRMT103-HF CFRMT106-HF CFRMT107-HF CFRMT104-HF F4 CFRMT102-HF F2 xx = Product type marking code Suggested PAD Layout SIZE (inch) 0.118 (mm) 3.00 1.30 1.80 0.051 0.071 4.30 0.169 E 1.70 0.067 B C D A C A E D B SOD-123H Pinning information Pin Simplified outline Symbol 1 2 PIN 1 Cathode PIN 2 Anode 21 CFRMT105-HF F5 Low Profile SMD Fast Recovery Rectifiers Standard Package Case Type REEL PACK (T/R)
3000 SOD-123H
( EA ) CARTON ( EA )(EA) Reel Size (inch) Type Mat’l Plastic