22GQ100 IRF | Alldatasheet
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30A, 100V 22GQ100 Major Ratings and Characteristics Description/Features 02/22/02 CASE STYLE www.irf.com 1 Characteristics 22GQ100 Units IIF(AV) Rectangular 30 A waveform VRRM 100 V IFSM @ tp = 8.3ms half-sine 400 A VF @ 30Apk, TJ =125°C 0.90 V TJ, T stg Operating and storage -55 to 150 °C 1 2 3 HIGH EFFICIENCY SERIES IR Case Style TO-254AA 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 17.40 [.685] 16.89 [.665] A 1.14 [.045] 0.89 [.035] 0.36 [.014] B A B 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139] 123 17.40 [.685] 16.89 [.665] 3.81 [.150] 0.84 [.033] MAX. C NOT ES : 1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994. 2. AL L DIME NS IONS AR E S H OWN IN MIL L IME T E R S [INCHE S ]. 3. CONT ROL LING DIMENS ION: INCH. 4. CONF ORMS TO JEDE C OUTLINE T O-254AA. PD -20353D (ISOLATED BASE) CATHODE ANODE The 22GQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source controlled drawings to TX, TXV and S levels. Hermetically Sealed High Frequency Operation Guard Ring for Enhanced Ruggedness and Long Term Reliability Schottky Diodes Connected in Series Electrically Isolated
2 www.irf.com Part number 22GQ100 VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Voltage Ratings 100 Parameters Limits Units Conditions IF(AV) Max. Average Forward Current 30 A 50% duty cycle @ T C = 100°C, rectangular waveform See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive 400 A @ t p = 8.3 ms half-sine Surge Current Absolute Maximum Ratings /G81 Pulse Width < 300µs, Duty Cycle < 2% Parameters Limits Units Conditions TJ Max.Junction Temperature Range -55 to 150 °C Tstg Max. Storage Temperature Range -55 to 150 °C RthJC Max. Thermal Resistance, Junction 1.0 °C/W DC operation See Fig. 4 to Case wt Weight (Typical) 9.3 g Die Size 200X200 mils Case Style TO-254AA Thermal-Mechanical Specifications Parameters Limits Units Conditions VFM Max. Forward Voltage Drop 1.1 V @ 20A See Fig. 1 /G81 1.6 V @ 35A
0.9 V @ 20A
1.3 V @ 35A
IRM Max. Reverse Leakage Current 0.8 mA T J = 25°CV R = rated VR See Fig. 2 /G81 45 mA T J = 125°C CT Max. Junction Capacitance 1400 pF V R = 5VDC ( 1MHz, 25°C ) L S Typical Series Inductance 7.8 nH Measured from anode lead to cathode lead 6mm ( 0.025 in.) from package Electrical Specifications TJ = 25°C TJ =1 25°C
www.irf.com 3 Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Max. Forward Voltage Drop Characteristics 0.0001 0.001 0.01 0.1 100 0 2 04 06 08 0 1 0 0 R A T = 150 °C 125 °C 100 °C 25 °C J Reverse Volta ge - V (V)
4 www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 4 - Max. Thermal Impedance Z thJC Characteristics IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . Data and specifications subject to change without notice. 02/02 22GQ100 RthJC (DC) = 1.0°C/W