100NDD NAINA | Alldatasheet
Document overview
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Technical content
Features
- Improved glass passivation for high reliability
- Exceptional stability at high temperatures
- High di/dt and dv/dt capabilities
- Low thermal resistance
- Available in both M1 and M2 package Thermal & Mechanical Specifications Parameter Operating junction temperature range Thermal resistance, junction to case Electrical Characteristics (T A = 25 OC unless otherwise Parameter Maximum average on-state current, 180 0C sinusoidal Maximum repetitive peak reverse voltage range Forward voltage drop RMS isolation voltage Maximum Ratings (T A = 25 0C unless otherwise noted) Parameter Symbol Maximum average forward current @ T J = 85 0C IF(AV) Maximum average RMS forward current I F(RMS) Maximum non-repetitive surge current @ t = 10ms I FSM Maximum I 2t for fusing @ t = 10ms I2t emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120- 4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com Diode – Diode Module Improved glass passivation for high reliability Exceptional stability at high temperatures Thermal & Mechanical Specifications (T A = 25 0C unless otherwise noted) Symbol Values TJ -65 to +12 5 Rth(JC) 0.35 C unless otherwise noted) Symbol Values C sinusoidal I T(max) 10 0 peak reverse voltage range V RRM 200 to 1600 VFM 1.35 VISO 2500 C unless otherwise noted) Values Units 100 A 157 A 2000 A 18 kA 2s M1 & M2 PACKAGE 100NDD 4205450 • Fax: 0120 -4273653 www.nainasemi.com Units 5 0C 0C/W Values Units 0 A 200 to 1600 V 1.35 V 2500 V M1 & M2 PACKAGE
2 D-95, Sector 63, Noida
sales@nainasemi.com Diode Configuration emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120- 4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com ALL DIMENSIONS ARE IN MM 100NDD 4205450 • Fax: 0120 -4273653 www.nainasemi.com