STP100N8F6 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
Features
Order code VDS RDS(on)max. ID PTOT STP100N8F6 80 V 0.009 Ω 100 A 176 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STP100N8F6 100N8F6 TO-220 Tube
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 100 A ID Drain current (continuous) at TC = 100 °C 70 A IDM(1) Drain current (pulsed) 400 A PTOT Total dissipation at TC = 25 °C 176 W EAS(2) Single pulse avalanche energy 170 mJ TJ Operating junction temperature range -55 to 175 Tstg Storage temperature range °C Notes: (1)Pulse width is limited by safe operating area. (2)Starting Tj = 25 °C, Id = 25 A, Vdd = 40 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 0.85 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 4: On /off-states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 250 µA 80 V IDSS Zero-gate voltage drain current VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TC = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 50 A 0.008 0.009 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz - 5955 - pF Coss Output capacitance - 244 - pF Crss Reverse transfer capacitance - 160 - pF Qg Total gate charge VDD = 40 V, ID = 100 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior" ) - 100 - nC Qgs Gate-source charge - 30 - nC Qgd Gate-drain charge - 25 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 40 V, ID = 50 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" ) - 33 - ns tr Rise time - 46 - ns td(off) Turn-off delay time - 103 - ns tf Fall time - 21 - ns
Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage VGS = 0, ISD = 100 A - 1.2 V trr Reverse recovery time ISD = 100 A, di/dt = 100 A/µs VDD = 64 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 38 ns Qrr Reverse recovery charge - 63 nC IRRM Reverse recovery current - 3.3 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs. temperature Figure 7: Normalized V(BR)DSS vs. temperature
3 Test circuits
Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline
Table 8: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
4.2 TO-220 type H package information
Figure 20: TO-220 type H package outline
Table 9: TO-220 type H package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.45 4.50 A1 1.22 1.32 A2 2.49 2.59 2.69 A3 1.17 1.27 1.37 b 0.78 0.87 b2 1.25 1.34 b4 1.20 1.29 1.50 1.45 c 0.49 0.56 D 15.40 15.50 15.60 D1 9.05 9.15 9.25 E 10.08 10.18 10.28 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 H1 6.25 6.35 6.45 L 13.20 13.40 13.60 L1 3.50 3.70 3.90 L2 16.30 16.40 16.50 L3 28.70 28.90 29.10 ∅P 3.75 3.80 3.85 Q 2.70 2.80 2.90
5 Revision history
Table 10: Document revision history Date Revision Changes 02-Sep-2014 1 Initial release. 02-Dec-2014 2 Document status promoted from preliminary to production data. Added the section of electrical characteristics (curves). Minor text changes. 08-Feb-2016 3 Added Section 4.2: "TO-220 type H package information".