100N03A UMW | Alldatasheet
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VDS =30V,ID=90A RDS(ON),3.8mΩ(Typ)@VGS=10V RDS(ON),6.4mΩ(Typ)@VGS =4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances Application DC-DCconverters Synchronous RectifierP ackageMarking andOrderingInformation DeviceMarking Device DevicePackage ReelSize Tapewidth QuantitY UMW 100N03A TO-252 330mm 12mm 2500 Absolute MaximumRatings(TA=25℃ unlessotherwise noted) Parameter Symbol Value Unit Drain-SourceVoltage VDS 30 V Gate-SourceVoltage VGS ±20 V DrainCurrent-ContinuousNote3 TC=25℃ ID 90 A TC=100℃ 63 A DrainCurrent-PulsedNote1 IDM 200 A AvalancheEnergyNote4 EAS 280 mJ AvalancheCurrent IAS 33 A MaximumPowerDissipation TC=25℃ PD 105 W StorageTemperatureRange TSTG -55to+150 ℃ OperatingJunctionTemperatureRange TJ -55to+150 ℃ ThermalResistance Parameter Symbol Min. Typ. Max Unit ThermalResistance,Junction-to-Case RθJC - 3.3 - ℃/W U MW UMW 100N03A R 1www.umw-ic.com 友台半导体有限公司 UMW 100N03A UMW 100N03A
ElectricalCharacteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceBreakdown Voltage BVDSS VGS=0V,IDS=250uA 30 - - V Zero GateVoltage DrainCurrent IDSS VDS=30V,VGS=0V - - 1 uA Gate-BodyLeakage IGSS VGS=±20V,VDS=0V - - ±100 nAV GS=10V,IDS=30A - 3.8 4.9O NCHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit GateThresholdVoltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.7 2.5 V Drain-Source On-State Resistance RDS(ON) mΩ VGS=4.5V,IDS=20A - 6.4 7.9 DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit InputCapacitance CiSS VDS=15V,VGS=0V, f=1MHz - 1963 - pFOutputCapacitance COSS - 248 - ReverseTransfer Capacitance Crss - 221 - GateResisitance Rg VDD=0V,VGS=1V, F=1MHz - 1.43 - Ω SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-OnDelayTime Td(on) VGS=10V,VDs=15V, RGEN=3Ω ID=20A - 55 - ns RiseTime tr - 36.4 - Turn-OffDelayTime Td(off) - 37.5 - FallTime tf - 14 - TotalGate Charge at10V Qg VDS=15V,IDS=45A, VGS=10V - 41 - nCGateto SourceGate Charge Qgs - 6.4 - Gateto Drain“Miller”Charge Qgd - 11 - DRAIN-SOURCEDIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceDiode ForwardVoltage VSD VGS=0V,IDS=20A - - 1.2 V Reverse RecoveryTime trr TJ=25℃,IF=20A di/dt=100A/us - 21.7 - nS Reverse RecoveryCharge Qrr - 7.2 - nC Notes: 1:Repetitive rating, pulsewidth limited bymaximum junction temperature. 2:Surface mountedon FR4Board,t≤10sec. 3:Pulse width≤300μs,duty cycle ≤2%. 4:EAS condition: L=0.5mH,VDD=15V,VG=10V,VGATE=30V,StartTJ=25℃. www.umw-ic.com 2 友台半导体有限公司 U MW UMW 100N03A R
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