100GXHH22 TOSHIBA | Alldatasheet
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TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS Unit in mm e@ Repetitive Peak Reverse Voltage : VRRM=4500V 2-gaes02 © Average Forward Current : Ip(Ay)=100A —~aaan G e@ Reverse Recovery Time 1 typ =5.5u8 es - MAXIMUM RATINGS We CHARACTERISTIC SYMBOL | RATING | UNIT g foros Repetitive Peak Reverse Voltage 4500 a Non-Repetitive Peak Reverse <_< Voltage (Non-Repetitive< 5ms, VrRsM 4700 Vv Or Lames Tj=0~125°C) Leet Average Forward Current Ip (AV 2000 (50H: 1. CATHODE Peak One Cycle Surge Forward Ipsm (50Hz) A Hepes Current (Non-Repetitive) 2200 (60Hz) - JEDEC — Junction Temperature Range —40~125 Storage Temperature Range —40~125 [Mounting Foree || ta.7 #15 ———r ountin; a “4 £ Weight : 290g
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION ] a. [acax. J unr] Repetitive Peak Reverse Current Var =4500V, Tj=125°C | — | 50] ma | Peak Forward Voltage IpM=320A (T}=25°C) | — | 20] v | Reverse Recovery Time ter 7 US dip/dt=100A/ys | t=125°C| — | 7.0 | Thermal Resistance Rth ¢- | Junction to Fin [| — [0.045 Q61001EAA2 @ TOSHIBA jis continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can maltunction or ‘all due to their inherent electrical Sensivty and vulnerability to physical stress. It is the responsibilty of the buyer, when lizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © ‘he information contained herein is presented only as a guide for the applications of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is, subject to change without notice 1997-08-18 1/2
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H PI NTT a “ so -LUM tT NI ge J 1 Till “0 30 50 100 300 500 1000 3B “to 30 50100 300 500 1000 RATE OF FALL OF FORWARD CURRENT a8 RATE OF FALL OF FORWARD CURRENT dip/dt (A/ ys) dip/dt (A/ ys) Ver — di/dt (TYP.) 8 mf ee LETT & ve ee e “LETT TT PTA TT TT ze og LIT TTY ge. LITT Pritt yy a gf LTT IAT TT TT TT s [Lowe eo 4 eee - “LYTTTTTT TTT TTT] e {ilTTiTiTtTi titi ty} 0 100, 200 300 400 500 600 700 RATE OF RISE OF FORWARD CURRENT di/dt (A/ ps) 1997-08-18 2/2