100FXFG13 TOSHIBA | Alldatasheet
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TOSHIBA 100FXFG13,100FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXFG13, 100FXFH13 HIGH SPEED RECTIFIER APPLICATIONS Unit in mm © Repetitive Peak Reverse Voltage : VRRM=3300V Dy e@ Average Forward Current : Ip(Av)=100A (a ~\\ i 3} | 1-6(CesHi i: @ Reverse Recovery Time (Tj=25°C) : trr=3.1ys iS Wy a 8 8 Ps, MAXIMUM RATINGS a CHARACTERISTIC SYMBOL | RATING | UNIT — 0s B64205 Repetitive Peak Reverse Voltage VRRM 3300 pio —— Non-Repetitive Peak Reverse SiS} ee 3 Voltage (Non-Repetitive<5ms, VRSM 3400 Vv <4 Pg gle T)=0~125°C) aa 4 cht th Average Forward Current IF (AV: o — Peak One Cycle Surge Forward 2000 (50Hz) Storage Temperature Range —40~125 [Serew Torque | SO | S| Nm | = Weight : 200g
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION Repetitive Peak Reverse Current | IRRM _|VRRM=3300V, T}=125°C | — | 30] ma | Peak Forward Voltage Ipm=320A, Tj=25°C | = [ 22] v | ; Tp=100A gear | — | 31] Reverse Recovery Time ‘Ss y tr dip/dt=100A/,s [T=125°° | — | 40] “ Thermal Resistance Junction to Fin [| — | 0.18 [c/w] Note : Contact thermal resistance Rth (c-f)=0.04°C / W (Applied silicone grease) 261001682 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can haluncion fal cue o thet ingergt elec! sensiviy and wulerabity Yo Bhyal sress Tes the responsibly ofthe yer, en lang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss Of human fe, bodily injury oF damage to property, In- developing your designs, please ‘ensure thet TOSHIBA, product: are. used within. specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is, subject to change without notice 1997-08-18 1/2
TOSHIBA 100FXFG13,100FXFH13 ip — Up (MAX,) rth (-c) — t (MAX, 3000; 0.28, ey) fede} lee Feo PU eee) a er —+—— Ao LJ BP A eS sth < oe ee re Ss Ce $< 22 fe oo 22 soi 1 Ae BF oad ol 5 a yA ga LT AT gate, dugduneuce ee Ceti ecient! g y : PCA) a f D B f ae Ch 4 Seen 1 a 2 “ESP PERESES SSeS BE oot a nd | BS Eee i} a a a a 30100500 1000 INSTANTANEOUS FORWARD VOLTAGE Up (V) TIME t (s and ms) Vg — di/dt (TYP.) 7” 2k soo tts Est: Ger = dip/at_ (TYP) . a a TTT : AGERE 8 of £5 sof TG é Tj =125°C_f s PTT ALT ¥ le | Le ill
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s — bog Fee a VA 38 i ge \\7 B sree s0- {BSS ey Pe SSS itil = co} co} 5 2 40) ‘| (Vp +300V) ter Ee 1/7i |i || it ECHR epheass < & FBS Vat lve Tin] Water e Li ti tt ti || soree s ceaea me BL ag % 300 400400800 08 = Wo ~a0 60 10000 5001000 RATE OF RISE OF FORWARD CURRENT ae RATE OF FALL OF FORWARD CURRENT difdt (A/ ys) jip/dt (AJ ps) sin 4597-08-18 2/2