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Technical content
Features
Characterized for operation from 136 to 941 MHz Unmatched input and output allowing wide frequency range utilization Integrated ESD protection Wideband — full power across each mobile radio band Exceptional thermal performance High linearity for: TETRA, SSB, LTE Typical Applications Output stage for VHF, UHF and 900 MHz 28 V base stations Output stage for VHF, UHF and 900 MHz high performance mobile radios Data Sheet: Technical Data A3T09S100N Airfast RF Power LDMOS Transistor Rev. 0— March 2021 136–941 MHz, 100 W CW, 32 V AIRFAST RF POWER LDMOS TRANSISTOR A3T09S100N T O -- 2 7 0 -- 2 PLASTIC Figure 1. Pin Connections source terminal for the transistor. improvements in the design of its products.
Table 1. Maximum Ratings Table 2. Thermal Characteristics
880 MHz
Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available athttp://www.nxp.com
Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) Channel Bandwidth @5M H zO f f s e t .
880 CW > 10:1
32 No Device
136 CW >5 : 1
Table 6. Ordering Information
Figure 2. Capacitance versus Drain- -Source Voltage
2.5 Vdc
3.0 Vdc
3.25 Vdc
3.5 Vdc
3.75 Vdc
2.75 Vdc
Figure 3. Drain Current Versus Drain- -Source Voltage
under indicated test conditions. MTTF calculator available athttp://www.nxp.com. Figure 4. MTTF versus Junction Temperature — CW
Figure 5. A3T09S100N Production Fixture Component Layout — 880 MHz Table 7. A3T09S100N Production Fixture Component Designations and Values — 880 MHz
Figure 6. Single- -Carrier Output Peak- -to- -Average Ratio Compression (PARC)Broadband Performance
3.84 MHz Channel Bandwidth
Figure 7. Intermodulation Distortion Products versus Two- -Tone Spacing Figure 8. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power
1 VDD =2 8V d c ,IDQ = 450 mA, f = 880 MHz, Single- -Carrier W- -CDMA
Pout, OUTPUT POWER (WATTS) AVG.
880 MHz 850 MHz910 MHz
910 MHz
850 MHz
Figure 9. Single- -Carrier W- -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power Figure 10. Power Gain and Drain Efficiency versus CW Output Power over Temperature
16 GAIN (dB)
Figure 11. Broadband Frequency Response
Figure 12. Series Equivalent Source and Load Impedance – 850–910 MHz
Table 8. 136 MHz Performance(In NXP Reference Circuit, 50 ohm system)
Figure 13. A3T09S100N Reference Circuit Component Layout — 136 MHz
Table 9. A3T09S100N Reference Circuit Component Designations and Values — 136 MHz
Figure 17. Series Equivalent Source and Load Impedance – 136 MHz
136 MHz Reference Circuit
Figure 18. Product Marking
Data Sheet: Technical Data 16 / 20 A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Package Information
Data Sheet: Technical Data 17 / 20 A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data 18 / 20 A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data 19 / 20 A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021 Product Documentation, Software and Tools Refer to the following documents, software and tools to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards
Revision History
The following table summarizes revisions to this document. Revision Date Description 0 Mar. 2021 Initial release of data sheet
Data Sheet: Technical Data 20 / 20 A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021 Information in this document is provided solely to enablesystem and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, orguarantee regarding the suitability of its products for any particularpurpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address:nxp.com/ SalesTermsandConditions. NXP, the NXP logo, Freescale, the Freescale logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E NXP B.V. 2021 All rights reserved. For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Date of release: March 2021 Document identifier: A3T09S100N How to Reach Us Home Page: nxp.com Web Support: nxp.com/support