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Technical content
Features
Internally input and output matched for broadband operation and ease of use Device can be used in a single- -ended, push- -pull or quadrature configuration Q u a l i f i e du pt o5 0V High ruggedness, handles > 20:1 VSWR Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing Characterized with series equivalent large- -signal impedance parameters Typical Applications Land- - or sea- -based UHF radar Document Number: MMRF1050H Rev. 0, 02/2021 NXP Semiconductors Technical Data 850–950 MHz, 1050 W PEAK, 50 V RF POWER LDMOS TRANSISTOR MMRF1050H NI- -1230H- -4S (Top View) Drain A31 Figure 1. Pin Connections
42 Drain B
source terminal for the transistor.
Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available athttp://www.nxp.com.
- Each side of device measured separately.
- Measurement made with device in push- -pull configuration.
Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) Table 5. Load Mismatch/Ruggedness(In NXP Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
950 Pulse
15 W Peak
50 No Device
Table 6. Ordering Information
- Measurement made with device in push- -pull configuration.
Figure 5. MMRF1050H Production Fixture Component Layout — 950 MHz
Table 7. MMRF1050H Production Fixture Component Designations and Values — 950 MHz
The measured input and output impedances are presented to the input of the device at the package reference plane. Measurements are performed in NXP optimally tuned fixtures in the frequency ranges of 850 and 950 MHz. Figure 10. Series Equivalent Source and Load Impedance
PACKAGE INFORMATION
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator .s2p File Development Tools Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2021 Initial release of data sheet
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