30BQ020 ZSELEC | Alldatasheet
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Features
! Sc hottk y Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical D ata ! Ter minals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Rat ings and Electrical Characteristics @TA=25°C unless otherwise specified 1 of 2 3.0 A Characteristic 80 A V 250 pF 20 °C/ W -55 to +150 °C P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L = 75°C (Not e 1) IO Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward V ol tage @I F = 3. 0A V FM P eak R eve r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.2 20 mA T y pical Junction Capacitance (Note 2) Cj T y pical Thermal Resistance (Note 1) R/G01JA Operating and Storage T emperature Range Tj, TSTG V 0.55 0.75 0. 85 0.92 V 100 150 105 200 140 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ! Weight: 0.20 grams (approx.) E A B C D F H G SMC/ DO-214AB Dim Min Max A 5.59 6.22 B 6.60 7.11 C 2.75 3.25 D 0.152 0.305 E 7.75 8.13 F 2.00 2.62 G 0.051 0.203 H 0.76 1.27 All D imensions in mm 30BQ020 – 30BQ200 30BQ020 – 30BQ200 020 30BQ UnitSymbol 030 30BQ 040 30BQ 050 30BQ 060 30BQ 080 30BQ 100 30BQ 150 30BQ 200 30BQ
0.1 1 10 100 C , JUNCTION CAPACITANCE (pF) j V , REVERSE VOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1 MHz j 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5T ypical Reverse Characteristics T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 2 of 2 100 11 0 100 I , PEAK FORWARD SURGE CURRENT (A) F NUM B ER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive P eak Fwd Surge Cu rrent Single Hal f-Sine-Wave (JEDEC Method) T = 100° CT Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.5 1.0 25 50 75 100 125 150 I A VERAGE FORWARD CURRENT (A)O, T , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° 1.5 2.0 2.5 3.0 I, INST ANT ANEOUS FORW ARD CURRENT (A) F V , INST ANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 T - 25º CJ I Pu lse Width = 300 sF µ 30BQ020 – 30BQ200 020 - 040 050 - 060 080 - 100 150-200 30BQ020 – 30BQ200