082N10N UMW | Alldatasheet

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Technical content

Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Ideal for high-frequency switching and synchronous rectification Maximum ratings, at T j =25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C2) 80 A T C=100 °C 58 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse E AS I D=73 A, R GS=25 W 110 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value UMW R 082N10N 100V N-Channel MOSFET
  • VDS
  • ID (at VGS =10V)=80A
  • RDS(ON) (at VGS=10V) < 8.2mΩ 100V= www.umw-ic.com 1 UTD Semiconductor Co.,Limited

Parameter Symbol Conditions Unit min. typ. max. Thermal resistance, junction - case R thJC 1.2 K/W Thermal resistance, R thJA minimal footprint 62 junction - ambient 6 cm2 cooling area3) 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 V Gate threshold voltage V GS(th) V DS=V GS, I D=75 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C 0.1 1 µA V DS=100 V, V GS=0 V, T j=125 °C 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=73 A, TO 220, TO 262 7.4 8.6 mW V GS=10 V, I D=73 A, TO263 7.2 8.3 V GS=10 V, I D=73 A, TO 252 7 8.2 V GS=6 V, I D=36 A, TO 220, TO 262 9.3 15.4 V GS=6 V, I D=36 A, TO 263 9.0 15.1 V GS=6 V, I D=36 A, TO 252 8.9 15 Gate resistance R G 1 W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 45 89 S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values UMW R 082N10N 100V N-Channel MOSFETwww.umw-ic.com 2 UTD Semiconductor Co.,Limited

Parameter Symbol Conditions Unit min. typ. max. Input capacitance Ciss 2990 3980 pF Output capacitance Coss 523 696 Reverse transfer capacitance C rss 21 Turn-on delay time t d(on) 18 ns Rise time t r 42 Turn-off delay time t d(off) 31 Fall time t f 8 Gate to source charge Q gs 15 nC Gate to drain charge Q gd 8 Switching charge Q sw 14 Gate charge total Q g 42 55 Gate plateau voltage V plateau 4.9 V Output charge Q oss V DD=50 V, V GS=0 V 55 73 nC Diode continous forward current IS 80 A Diode pulse current IS,pulse 320 Diode forward voltage VSD V GS=0 V, I F=80 A, T j=25 °C 1.0 1.2 V Reverse recovery time trr 71 ns Reverse recovery charge Qrr 123 nC 4) See figure 16 for gate charge parameter definition V R=50 V, I F=73 A, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=73 A, R G,ext=1.6 W V DD=50 V, I D=73 A, V GS=0 to 10 V UMW R 082N10N 100V N-Channel MOSFETwww.umw-ic.com 3 UTD Semiconductor Co.,Limited

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 10-1 100 101 102 103 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 ZthJC [K/W] tp [s] 100 125 150 0 50 100 150 200 Ptot [W] TC [°C] 100 0 50 100 150 200 ID [A] TC [°C] UMW R 082N10N 100V N-Channel MOSFETwww.umw-ic.com 4 UTD Semiconductor Co.,Limited

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 4.5 V 5 V 6 V 7.5 V 10 V 0 20 40 60 80 100 RDS(on) [mW] ID [A] 25 °C 175 °C 100 150 0 2 4 6 8 ID [A] VGS [V] 100 120 0 40 80 120 gfs [S] ID [A] 4.5 V 5 V 5.5 V 6 V 7.5 V 10 V 100 150 200 250 300 0 1 2 3 4 5 ID [A] VDS [V] UMW R 082N10N 100V N-Channel MOSFETwww.umw-ic.com 5 UTD Semiconductor Co.,Limited

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=73 A; V GS=10 V; TO 220 V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 75 µA 750 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 0 20 40 60 80 C [pF] VDS [V] 25 °C 175 °C 25 °C, 98% 175 °C, 98% 100 101 102 103 0 0.5 1 1.5 2 IF [A] VSD [V] UMW R 082N10N 100V N-Channel MOSFETwww.umw-ic.com 6 UTD Semiconductor Co.,Limited

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=73 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 20 V 50 V 80 V 0 10 20 30 40 50 VGS [V] Qgate [nC] 100 105 110 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Qg 25 °C 100 °C 150 °C 100 1 10 100 1000 IAS [A] tAV [µs] UMW R 082N10N 100V N-Channel MOSFETwww.umw-ic.com 7 UTD Semiconductor Co.,Limited

R 082N10N 100V N-Channel MOSFETwww.umw-ic.com 8 UTD Semiconductor Co.,Limited Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D Package Mechanical Data TO-252 MarkingOrdering information Order code Package Baseqty Deliverymode TO-252 2500 Tape and reel UMW IPD082N10N3G