071_07 MICROSEMI | Alldatasheet
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Technical content
Silicon Controlled Rectifier Series O71 =P y "r P Dim. Inches Millimeter AA bi — — R VM Minimum Maximum Minimum Maximum Notes t YY B 1.050 1,060 26.67 26.92 D 5.850 6.144 149.10 156.06 z E 6.850 7.375 173.99 187.33 Y o & F797 827 20.24 21.01 x-V G 276 .286 701 7.26 w U ll H J .425 499 10.80 12.67 2 | K — .260 .280 6.60 7M Dia. — T [I —t M 500 600 12.70 15.24 tH ee N 140 150 3.56 3.81 YA Cr fs F Ro --- ‘900 --- 22.86 Dio. TO-208AD TO-209AC Tool 1.7500 --— 44.45 (TO-83) (T0-94) U 370 .380 9.40 9.65 Note 1: 1/220 UNF-3A Voz 223 5.41 5.66 Dia. Note 2: Full thread within 2 1/2 threads W065 .075 1.65 1.91 Dia. Note 3: To specify package designation other than non-insulated |X — .215 225 5.46 5.72 lead enter appropriate letter in place of “A”. Y — .290 315 7.37 8.00 "g” = Insulated lead Z 5I4 530 13.06 13.46 "D" = Flag Terminal AA .089 .099 2.26 2.51 "C" = Top Stud (consult factory) Microsemi Forward & Reverse Reverse Transient . fgteleg Nogber Repetitive Blocking Blocking e High dv/dt-200 V/usec. ee Note ©1600 Amperes surge current O7104G0A 400 500 ° peres surg Low forward on-state voltage 07105G0A 500 600 ° . . 07108G0A 800 800 TO-208AD outline 07110GOA 1000 1000 ° ical for fr h | teen 1908 1908 sootrcaticns ‘or general purpose phase control To specify dv/dt higher than 200V/usec., contact factory.
Electrical Characteristics
Max. RMS on-state current 'T(RMS) 110 Amps Te = 87°C Max. average on-state cur. 'T(AV) 70 Amps TC = 87°C Max. peak on-state voltage VIM 1.6 Volts 'TM = 220 A(peak) Max. holding current ty 200 mA Mox. peak one cycle surge current 'TsM 1600 A Tc = 87°C, 60 Hz Max. I2t capability for fusing 2t 10,624A2S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range Ln) 65°C to 125°C Storage temperature range TSTG -65°C to 150°C Maximum thermal resistance Reuc 0.40°C/W Junction to case Typical thermal resistance (greased) @CcS 0.20°C/W Case to sink Mounting torque 100-130 inch pounds Weight 071-GOA Approx. 3.6 ounces (102.0 grams) typical 071-GOD Approx. 3.24 ounces (91.8 grams) typical ° LAWRENCE ° 6 Lake Street Lawrence, MA 01841 -25-— MICFOSCIN| G3 tao 04-25-07 few 3 FAX: (978) 689-0803 www.microsemi.com
Critical rate of rise of on-state current (note 1) _—di/dt 100A /usec. Ty = 125°C Typical delay time (note 1) td 3.0 usec. 5 Typical circuit commuted turn-off time (note 2) tq 100 usec. TJ = 125°C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turn-off interval = SOV min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Typical gate voltage to trigger Vor 1.0V Ty = 25°C Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate current to trigger ‘oT 100mA Ty = 25°C Typical gate current to trigger ‘oT 48mA Ty = 25°C Max. peak gate power Pom 15W Average gate power Po(av) 3.0W tp = 10 usec. Max. peak gate current "CM 4.04 Max. peak gate voltage (forward) Vom 10V Max. peak gate voltage (reverse) Vom 5.0V Blocking Max. leakage current 'DRM 10mA Ty =125°C &V DRM Max. reverse leakage 'RRM 10mA Ty =125°C &V RRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty =125°C 04-25-07 Rev. 3