065N10N UMW | Alldatasheet

Document overview

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Technical content

Features

  • ExcellentgatechargexRDS(on)product(FOM)
  • Verylowon-resistanceRDS(on)
  • 175°Coperatingtemperature
  • Pb-freeleadplating;RoHScompliant
  • Idealforhigh-frequencyswitchingandsynchronousrectification UMW R 065N10N

100 V N-Channel MOSFET

  • VDS
  • ID (at VGS =10V)=80A
  • RDS(ON) (at VGS=10V) < 6.2mΩ 100V= TO - 263 Maximumratings atTj=25°C,unlessotherwisespecified Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID

73 A TC=25°C1)

TC=100°C Pulsed drain current1) ID,pulse 320 A TC=25°C Avalanche energy, single pulse EAS 160 mJ ID=80A,RGS=25Ω Gate source voltage VGS -20 20 V Power dissipation Ptot 150 W TC=25°C Operating and storage temperature Tj,Tstg -55 175 °C www.umw-ic.com 1 UTD Semiconductor Co.,Limited

Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC 1 K/W Thermal resistance, junction - ambient, minimal footprint RthJA 62 K/W Thermal resistance, junction - ambient, 6 cm2 cooling area2) RthJA 40 K/W UMW R 065N10N Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=90µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 5.9 7.3 6.5 12.4 mΩ VGS=10V,ID=80A VGS=6V,ID=40A Gate resistance1) RG 1.6 2.4 Ω Transconductance gfs 50 99 S |VDS|>2|ID|RDS(on)max,ID=80A Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 3690 4910 pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss 646 859 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss 25 44 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) 19 ns VDD=50V,VGS=10V,ID=80A, RG,ext=1.6Ω Rise time tr 37 ns VDD=50V,VGS=10V,ID=80A, RG,ext=1.6Ω Turn-off delay time td(off) 37 ns VDD=50V,VGS=10V,ID=80A, RG,ext=1.6Ω Fall time tf 9 ns VDD=50V,VGS=10V,ID=80A, RG,ext=1.6Ω www.umw-ic.com 2 UTD Semiconductor Co.,Limited Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 18 nC VDD=50V,ID=80A,VGS=0to10V Gate to drain charge1) Qgd 10 15 nC VDD=50V,ID=80A,VGS=0to10V Switching charge Qsw 16 nC VDD=50V,ID=80A,VGS=0to10V Gate charge total Qg 51 64 nC VDD=50V,ID=80A,VGS=0to10V Gate plateau voltage Vplateau 4.9 V VDD=50V,ID=80A,VGS=0to10V Output charge1) Qoss 68 91 nC VDD=50V,VGS=0V

R 065N10N R 065N10N Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS 80 A TC=25°C Diode pulse current IS,pulse 320 A TC=25°C Diode forward voltage VSD 1 1.2 V VGS=0V,IF=80A,Tj=25°C Reverse recovery time1) trr 73 146 ns VR=50V,IF=IS,diF/dt=100A/µs Reverse recovery charge1) Qrr 139 278 nC VR=50V,IF=IS,diF/dt=100A/µswww.umw-ic.com 3 UTD Semiconductor Co.,Limited

Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 100 125 150 175 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 150 200 100 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T UMW R 065N10N www.umw-ic.com 4 UTD Semiconductor Co.,Limited

Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 160 240 320 400 10 V 7.5 V 6 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 200 250 300 4.5 V 5 V 6 V 7.5 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 25 °C 175 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 150 120 160 gfs=f(ID);Tj=25°C UMW R 065N10N 100 V N-Channel MOSFETwww.umw-ic.com 5 UTD Semiconductor Co.,Limited

Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 max typ RDS(on)=f(Tj);ID=80A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 900 µA 90 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 175 °C 25 °C max 175 °C max F=f(VSD);parameter:Tj UMW R 065N10N 100 V N-Channel MOSFETwww.umw-ic.com 6 UTD Semiconductor Co.,Limited

Diagram13:Avalanchecharacteristics tAV[µs] IAS[A] 10-1 100 101 102 103 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 80 V 50 V 20 V VGS=f(Qgate);ID=80Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 100 105 110 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms UMW R 065N10N 100 V N-Channel MOSFETwww.umw-ic.com 7 UTD Semiconductor Co.,Limited

R 065N10N 100 V N-Channel MOSFETwww.umw-ic.com 8 UTD Semiconductor Co.,Limited Package Mechanical Data TO-263

R 065N10N 100 V N-Channel MOSFETwww.umw-ic.com 9 UTD Semiconductor Co.,Limited Marking Orderinginformation Order code Package Baseqty Deliverymode TO-263 800 UMW IPB065N10N3G Tape and reel