IPP05N03L INFINEON | Alldatasheet

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Technical content

OptiMOSâ Buck converter series Product Summary VDS 30 V RDS(on) max. SMD version 4.9 mΩ ID 80 A Feature

  • N-Channel
  • Logic Level
  • Very low on-resistance RDS(on)
  • Excellent Gate Charge x RDS(on) product (FOM)
  • Superior thermal resistance
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated
  • Ideal for fast switching buck converters P- TO263 -3-2 P- TO220 -3-1 Marking 05N03L 05N03L Type Package Ordering Code IPP05N03L P- TO220 -3-1 Q67042-S4038 IPB05N03L P- TO263 -3-2 Q67040-S4343 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) TC = 25 °C 1) ID A Pulsed drain current TC=25°C ID puls 320 Avalanche energy, single pulse ID=55A, VDD=25V, RGS=25Ω EAS 60 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 16 Reverse diode dv/dt IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 167 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.6 0.9 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID=100µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=55A VGS=4.5V, ID=55A, SMD version RDS(on) 5.6 5.2 7.5 7.2 mΩ Drain-source on-state resistance4) VGS=10V, ID=55A VGS=10V, ID=55A, SMD version RDS(on) 3.7 5.2 4.9 1Current limited by bondwire ; with an RthJC = 0.9K/W the chip is able to carry ID= 145A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥ 2*ID*RDS(on)max, ID=80A 55 110 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 2500 3320 pF Output capacitance Coss - 975 1300 Reverse transfer capacitance Crss - 215 325 Gate resistance RG - 1.75 - Ω Turn-on delay time td(on) VDD=15V, VGS=10V, ID=20A, RG=2.7Ω - 10 15 ns Rise time tr - 18 27 Turn-off delay time td(off) - 44 66 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=15V, ID=40A - 7.9 10.5 nC Gate to drain charge Qgd - 18.5 23.1 Gate charge total Qg VDD=15V, ID=40A, VGS=0 to 5V - 36 45 Output charge Qoss VDS=15V, ID=40A, VGS=0V - 34.8 43.5 nC Gate plateau voltage V(plateau) VDD=15V, ID=40A - 3.2 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.95 1.26 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 46.5 58.1 ns Reverse recovery charge Qrr - 55.5 69.4 nC

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 140 W 180 IPP05N03L Ptot

2 Drain current

ID = f (TC) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A IPP05N03L ID 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IPP05N03L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A IPP05N03L ID R DS(on) V DS / I D DC 10 ms 1 ms 100 µs tp = 12.0µs

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 100 120 140 160 A 190 IPP05N03L ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i Ptot = 167W i 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 100 A 140 ID mΩ IPP05N03L RDS(on) VGS [V] = c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 V 6 VGS 100 125 150 175 200 A 250 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 25 50 75 100 125 150 175 200 A 250 ID 100 S 140 gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 55 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj mΩ IPP05N03L RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V VGS(th) 0,855mA 110µA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A IPP05N03L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 55 A, VDD = 25 V, RGS = 25 Ω 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 40 A pulsed 0 20 40 60 80 nC 110 QGate V IPP05N03L VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V IPP05N03L V(BR)DSS

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