FCX1053A_06 ZETEX | Alldatasheet

Document overview

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Technical content

Features

  • Extremely low equivalent on-resistance; R CE(sat) = 7.8m/H9024 at 4.5A  3 Amps continuous current  Up to 10 amps peak current  Very low saturation voltages  Excellent h FE characteristics up to 10 amps

Applications

 Emergency lighting circuits  Motor driving (including DC fans)  Solenoid, relay and actuator drivers  DC-DC modules  Backlight inverters  Power switches  MOSFET gate drivers

Ordering information

(inches) Tape width (mm) Quantity per reel FCX1053ATA 7 12 1,000 C E B C E Pinout - top view C B

Issue 2 - July 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 Absolute maximum ratings NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR 4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Parameter Symbol Value Unit Collector-base voltage V CBO 150 V Collector-emitter voltage V CEO 75 V Emitter-base voltage V EBO 5V Continuous collector current(a) IC 3A Peak pulse current I CM 10 A Power dissipation at Tamb = 25°C(a) PD 1.6 W Linear derating factor 13 mW/°C Power dissipation at Tamb = 25°C(b) PD 2.0 W Linear derating factor 16 mW/°C Operating and storage temperature range T j;Tstg -55 to +150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient(a) R/H9052JA 72 °C/W Junction to ambient(b) R/H9052JA 62 °C/W

Issue 2 - July 2006 3 www.zetex.com © Zetex Semiconductors plc 2006 Thermal characteristics

Issue 2 - July 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 150 250 V I C = 100/H9262A Collector-emitter breakdown voltage VCES 150 250 V I C = 100/H9262A Collector-emitter breakdown voltage VCEO 75 100 V I C = 10mA Collector-emitter breakdown voltage VCEV 150 250 V I C = 100/H9262A, VEB = 1V Emitter-base breakdown voltage V(BR)EBO 58 . 8 V I E = 100/H9262A Collector cut-off current I CBO 0.9 10 nA V CB = 120V Emitter cut-off current I EBO 0.3 10 nA V EB = 4V Collector-emitter cut-off current ICES 1.5 10 nA V CES = 120V Collector-emitter saturation voltage VCE(sat) 21 30 mV IC = 0.2A, IB = 20mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width = 300/H9262s. Duty /H113492%. 55 75 mV IC = 0.5A, IB = 20mA(*) 150 200 mV IC = 1A, IB = 10mA(*) 160 210 mV IC = 2A, IB = 100mA(*) 350 440 mV IC = 4.5A, IB = 200mA(*) Base-emitter saturation voltage VBE(sat) 900 1000 mV IC = 3A, IB = 100mA(*) Base-emitter turn-on voltage VBE(on) 825 950 mV IC = 3A, VCE = 2V(*) Static forward current transfer ratio hFE 270 440 IC = 10mA, VCE = 2V(*) 300 450 1200 IC = 0.5A, VCE = 2V(*) 300 450 IC = 1A, VCE = 2V(*) 40 60 IC = 4.5A, VCE = 2V(*)

20 IC = 10A, VCE = 2V(*)

Switching times t on 162 ns I C = 2A, IB1 = IB2 = /H1100620mA, VCC = 50V toff 900 ns I C = 2A, IB1 = IB2 = /H1100620mA, VCC = 50V Transition frequency f T 140 MHz I C = 50mA, VCE = 10V, f = 100MHz Output capacitance C OBO 21 30 pF V CB = 10V, f = 1MHz

Issue 2 - July 2006 5 www.zetex.com © Zetex Semiconductors plc 2006 Typical characteristics

Issue 2 - July 2006 6 www.zetex.com © Zetex Semiconductors plc 2006 For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Highway

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max D A C L EH E1 B e