051 MICROSEMI | Alldatasheet

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Technical content

(=-) + B Minimum Maximum Minimum Maximum Notes a, | Cathode A == --- =e --- 1 Bo 677 685, 17.20 17.40 yh Gate | 5 1.200 1.350 30.48 34.29 =I-N K | | R — 427 455 10.84 11.55 | Fo 115 155 2.92 3.94 I I F H 220 249 5.58 6.32 2 _—) ° Anode J .200 300 5.08 7.62 Ci) F Mo --- 680 --- 17.27 Dia. = 1 i N 030 .060 .762 1.52 ,— B f P 170 180 4.32 4.57 Dia. S025 .030 64 76 Note 1: 1/4-28 UNF-3A Note 2: Full thread within 2 1/2 threads TO-—208AC (TO-65) CERAMIC Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking VORM, VRRM 05102G0F 200 300 e dv/dt-200 V/usec 05104GOF 400 500 05106C0F 600 500 @1200 Amperes surge current 05108GOF 800 900 eHi- ; OS110GOF 1000 1100 Hi-Rel Ceramic Header 05112GOF 1200 1300 To specify dv/dt other than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 80 Amps Tc = 94°C Max. average on-state cur. '1(Av) 50 Amps Tc = 94°C Max. peak on-state voltage VIM 2.5 Volts 'TM = 500 A(peak) Max. holding current 'y 200 mA . Max. peak one cycle 'TsM 1200 Amps TC = 94°C 60Hz surge current Max. |2t capability for fusing rt 6000A2S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -65°C to 150°C Storage temperature range TSTG -65°C to 150°C Maximum thermal resistance Reve 0.35°C/W Junction to case Typical thermal resistance (greased) ‘@cs 0.20°C/W Case to sink Mounting torque 25-30 inch pounds Weight 0.63 ounces (18 grams) typical am _ LAWRENCE am 6 Lake Street Lawrence, MA 01841 icrosemi PH: (978) 620-2600 04-24-07 Rev. 2 FAX: (978) 689-0803 wuw.microsemi.com

TJ = 25°C unless otherwise indicated Switching Critical rate of rise of on-state current (note 1) —di/dt 200A /usec. Ty = 128°C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tq 100 usec. Ty = 125°C Note 1: 'TM = 50A, VD = VDRM. GT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: TM = 50A, di/dt = 5A/usec., YR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated YDRM, YGT = OV Triggering Max. gate voltage to trigger Vet 3.0V Max. nontriggering gate voltage Yop 0.25V Ty = 128°C Max. gate current to trigger Ke 100mA Max. peak gate power Pom 10W Average gate power Po(av) 1.0W tp = 10 usec. Max. peok gate current ‘om 3.0A Max. peak gate voltage (forward) Vom 20V Max. peak gate voltage (reverse) Vom 10V Blocking Max. leakage current 'DRM 6mA Ty = 125°C & YDRM Max. reverse leakage 'RRM 6mA Ty = 125°C & VRRM Critical rate of rise of off-state voltage dv/dt 200V/usec. TJ = 125°C 04-24-07 Rev. 2

Typical Forward On—State Characteristics Maximum Power Dissipation 10000, 2 105 SSeS ETT Td a 90 : soo ttt f ha0° | 180 Cee ee eereeeeeree 5a 1 on EE CC LT TT Tye ey ey yy 3 60 OEE) POO eo eee we Pg LL et | cL LA FE 1000 9} 9 oo - 15 LF SESSESSSeeeeS DA ES ee ES 5

600 TT TAT Pe 0 5 10 15 20 25 30 35 40 45 50

400 y Average On-State Current — Amperes WY BEeey 4a Go IW ees 8 x00 fi. Transient Thermal Impedance "ott KALLE) noo too hz Jibs Eos § 100 g a | & Or 90s 2 8A oe CELE TTT Tl 3 0.4 Boo HE 8 CIE et 5 y SAMS ee CII ie ee ri 2 s2 eto LULL

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6 10 14 18 22 26 30 34 001 ol o4 1.0 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating Maximum Nonrepetitive Surge Current § 125 $ 1200

1 ON 5

coe | | TT TT} oe AE TTT TT NNER eee eee e115 SSW ! 1000 5 € NNN ee ee = vost _ | INNSN OTe WL NTT TT Ne ee 5 t99 KIN ® 700 as sop ttt TT INN os WE Pee 5 os NONI 5 600 [| £ x St LL Took dol] odlcbl ool = sol 1 [TTT Tt TT 0 10 20 30 40 50 1 10 700 Average On-State Current - Amperes Number of Cycles 04-24-07 Rev. 2