050R MICROSEMI | Alldatasheet

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Technical content

Anode Gate Silicon Controlled Rectifier M ~*~ GN (d= 5 8 Anode A =~ --- --- --- 1 et B77 685 17.20 17.40 c Gate C =n- 770 --- 19.56 J D ‘1.200 1.250 30.48 31.75 >| F --N R E 427 47 10.84 11.35 ql Fo 115 155 2.92 3.94 Pp K “KT G --- 515 =r 13.08 — Oe H .220 249 5.58 6.32 2 li 0 Cathode J .200 "3005.08 7.62 Cr JF i Mo === 667 --- 16.94 Dia. = i] t N .065 085 1.65, 2.15 = P 145 155 3.68 3.93 Dia. A — Bt R 055 065 1.40 1.65 Dia. Ss 025 030 64 76 Note 1: 1/4-28 UNF-3A Note 2: Full thread within 2 1/2 threads TO-—208AC (TO-65) Microsemi Forward & Reverse Catalog Number Repetitive Blocking VDRM, VRRM e dv/dt-200 V/usec OSORO2GOF 200 ©1200 Amperes surge current O50R04GOF 400 . . O50RO6GOF 600 ° Economical, for medium O50RO8GOF 800 power applications OSOR10GOF 1000 Compact TO—208AC package 050R12GOF 1200 To specify dv/dt other than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 80 Amps Te = 94°¢ Max. average on-state cur. 'T(Av) 50 Amps Tce = 94°C Max. peak on-state voltage VIM 1.5 Volts 'TM = 200 A(peok) Max. holding current 'y 200 mA 5 Max. peak one cycle 'TsM 1200 Amps TC = 94°C 60Hz surge current Max. I2t capability for fusing I2t 6000425 t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range wW -65°C to 125°C Storage temperature range TSTG -65°C to 150°C Maximum thermal resistance Reuc 0.35°C/W Junction to case Typical thermal resistance (greased) ‘@cs 0.20°C/W Case to sink Mounting torque 25-30 inch pounds Weight 0.56 ounces (16 grams) typical . LAWRENCE « 6 Loke Street Lawrence, MA 01841 ICFOSCLY) | eH: 78) 620-2600 04-24-07 Rev. 3 FAX: (978) 689-0803 www.microsemi.com

TJ = 25°C unless otherwise indicated Switching Critical rate of rise of on-state current (note 1) di/dt 200A/usec. TJ = 125°C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tq 100 usec. Ty = 125°C Note 1: 'TM = 50A, VD = VDRM. GT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: ITM = 50A, di/dt = 5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated YDRM, YGT = OV Triggering — Third Quadrant Max. gate voltage to trigger Vor -3.0V Max. nontriggering gate voltage Me) -0.25V Ty = 128°C Max. gate current to trigger \\oT —100mA Max. peak gate power Pom 10W Average gate power Po(av) 1.0W tp = 10 usec. NOTE: Triggering in the third quadrant requires a series gate current limiting resistor for 200mA and diode protection. Blocking Max. leakage current 'DRM 6mA Ty = 125°C & VORM Max. reverse leakage 'RRM 6mA Ty = 125°C & VRRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty = 125°C 04-24-07 Rev. 3

Typical Forward On—State Characteristics Maximum Power Dissipation 10000. er 2 105 eo EET LT TTT TT I soo , 90 h 20° | 1802 Cee eee 5 75 1 oo SE CO PEP Ete e Tey ye yt g 60 Uoa POO eo eee we Pg | | eT st LA 1000 > 9 oo - 15 GAA Wjeseoa-o=----o eee Ba ee 2 Lt 80 47 Tr EEEEEELEEL EL 0 5 10 15 20 25 30 35 40 45 50 y

400 Lt itt tet tt et Average On-State Current — Amperes

8 x00 Vs Transient Thermal Impedance oe LUT TT TT ~ 1001-1! spel i. E06 g 100 g a eS | § Or 905 ee toe CIE TET 3 04 fogs LIE et 5 y SARS ee CII Po TTT TTT TTT TT | ete 4 8 2 Eo. oH 5 7] 520,11 Ue Tl ULE gs eerie 2 ae call 6 10 14 18 22 26 30 34 001 oO ot 10 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating Maximum Nonrepetitive Surge Current VeNSSLOPEEL) ERC on . g CNS PBN Pot Sd vo NL ETE ft TY ee NN ee eee = ost | | INNS Ee wo ESN TT 2 105 SAS e 800 IN

3 WN 2 SQ

Po ttt | AINSI Tg J TPKE TT 3 100 NIN % 700 ~ sot tl tT INN) og LE TT Feat § ¢ N INI 5 600 [| £ x Soot LL Lod bel | odliobl lisl © 8 sol | TELE TT TTI 0 10 20 30 40 50 1 10 100 Average On-State Current - Amperes Number of Cycles 04-24-07 Rev. 3