050 MICROSEMI | Alldatasheet

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Technical content

Silicon Controlled Rectifier u NAN Vini - — - (det +8 A =~ --- --- --- 1 = Bo 677 685 17.20 17.40 J D ‘1.200 1.250 30.48 31.75 | F --N R E427 447 10.84 11.35 Fo 115 155 2.92 3.94 P PT H — .220 249 5.58 6.32 2 D J .200 300 5.08 7.62 i N .065 085 1.65 2.15 Po 145 155 3.68 3.93 Dia. so —eeee R055 065 1.40 1.65 Dia. S025 .030 64 76 Note 1: 1/4-28 UNF-3A Note 2: Full thread within 2 1/2 threads TO-—208AC (TO-65) Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking VORM, VRRM e dv/dt-200 V/usec 05002G0F 200 300 ©1200 Amperes surge current 05004G0F 400 500 . : 05006GOF 600 700 ® Economical for medium 05008GOF 800 900 power applications 05010G0F 1000 1100 Compact TO—208AC package 05012G0F 1200 1300 P Packag To specify dv/dt other than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 80 Amps Te = 94°¢ Max. average on-state cur. 'T(Av) 50 Amps Te = 94°C Max. peak on-state voltage VIM © 2.3 Volts 'TM = 500 A(peak) Max. holding current 'y 200 mA 5 Max. peak one cycle 'TsM 1200 Amps TC = 94°C 60Hz surge current Max. I?t capobility for fusing I2t 6000A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range TW -65°C to 125°C Storage temperature range TSTG -65°C to 150°C Maximum thermal resistance Reuc 0.35°C/W Junction to case Typical thermal resistance (greased) ‘@CS 0.20°C/W Case to sink Mounting torque 25-30 inch pounds Weight 0.56 ounces (16 grams) typical ° LAWRENCE « 6 Lake Street Lawrence, MA 01841 ICLFOSECSY) | Pn (978) 620-2600 04-24-07 Rev. 2 FAX: (978) 689-0803 www.microsemi.com

TJ = 25°C unless otherwise indicated Switching Critical rate of rise of on-state current (note 1) di/dt 200A/usec. TJ = 125°C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tq 100 usec. Ty = 125°C Note 1: 'TM = 50A, VD = VDRM. GT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: ITM = 50A, di/dt = 5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated YDRM, YGT = OV Triggering Max. gate voltage to trigger Vot 3.0V Max. nontriggering gate voltage Vop 0.25V Ty = 128°C Max. gate current to trigger Ke 100mA Max. peak gate power Pom 10W Average gate power Pocay) 1.0W tp = 10 usec. Max. peok gate current ‘GM 3.0A Max. peak gate voltage (forward) Vom 20V Max. peak gate voltage (reverse) Vom 10V Blocking Max. leakage current 'DRM 6mA Ty = 125°C & YDRM Max. reverse leakage 'RRM 6mA Ty = 125°C & VRRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty = 125°C 04-24-07 Rev. 2

Typical Forward On—State Characteristics Maximum Power Dissipation 10000. er 2 105 eo EET LT TTT TT I soo , 90 h 20° | 1802 Cee eee 5 75 1 oo SE CO PEP Ete e Tey ye yt g 60 Uoa POO eo eee we Pg | | eT st LA 1000 > 9 oo - 15 GAA Wjeseoa-o=----o eee Ba ee 2 Lt 80 47 Tr EEEEEELEEL EL 0 5 10 15 20 25 30 35 40 45 50 y

400 Lt itt tet tt et Average On-State Current — Amperes

8 x00 Vs Transient Thermal Impedance oe LUT TT TT ~ 1001-1! spel i. E06 g 100 g a eS | § Or 905 ee toe CIE TET 3 04 fogs LIE et 5 y SARS ee CII Po TTT TTT TTT TT | ete 4 8 2 Eo. oH 5 7] 520,11 Ue Tl ULE gs eerie 2 ae call 6 10 14 18 22 26 30 34 001 oO ot 10 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating Maximum Nonrepetitive Surge Current VeNSSLOPEEL) ERC on . g CNS PBN Pot Sd vo NL ETE ft TY ee NN ee eee = ost | | INNS Ee wo ESN TT 2 105 SAS e 800 IN

3 WN 2 SQ

Po ttt | AINSI Tg J TPKE TT 3 100 NIN % 700 ~ sot tl tT INN) og LE TT Feat § ¢ N INI 5 600 [| £ x Soot LL Lod bel | odliobl lisl © 8 sol | TELE TT TTI 0 10 20 30 40 50 1 10 100 Average On-State Current - Amperes Number of Cycles 04-24-07 Rev. 2