10BQ020 ZSELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
1.0 A SURFACE MOUNT SCHOTTKY BARRIER DIODE 10BQ020 – 10BQ200 Feat ures Schottky Barrier Chip ! I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y ! Low Power Loss, High Efficiency ! For Use in Low Voltage Application ! G u a r d R i n g D i e C o n s t r u c t i o n ! Plastic Case Material has UL Flammability C l a s s i f i c a t i o n R a t i n g 9 4 V - O /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M echanical Data Case: SMA/DO-214AC, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.064 grams (approx.) ! Lead Free: For RoHS / Lead Free Version M aximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified S MA/DO-214AC Di m M in Max A 2. 50 2. 90 B 4. 00 4. 60 C 1. 20 1. 60 D 0. 152 0. 305 E 4.80 5. 28 F 2. 00 2. 44 G 0.051 0. 203 H 0. 76 1. 52 A ll Dimensions in mm 1 of 2 10BQ020 – 10BQ200 S ur g e O v e r l o a d R a t i n g t o 3 0 A P e a k C haracteristic www.senocn.com Zibo Seno Electronic Engineering Co.,Ltd. Typical Junction Capacitance 0.55 0.70 0.85 0.95 V 1.0 A 14 21 28 35 42 56 70 105 140 V 20 30 40 50 60 80 100 150 200 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RMS Reverse Voltage VR( RMS) A verage Rectified Output Current @T L = 75°C IO Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FS M 30 A Forward Voltage @I F = 1.0A V FM P eak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C IRM 0.1 20 mA R/G01JL R/G01JA 88 °C Operat ing Temperat ure Range Tj -55 to +150 °C S torage Te mperature Range TST G -55 to +150 °C Typical Thermal Resistance (Note 1) jC 110 30 110 pF 020 E A B C D F H G 10BQ UnitSymbol 030 10BQ 040 10BQ 050 10BQ 060 10BQ 080 10BQ 100 10BQ 150 10BQ 200 10BQ
www.senocn.com Zibo Seno Electronic Engineering Co.,Ltd. 0.01 0.1 1.0 0 0.4 0.8 1.2 I, INST ANT ANEOUS FORWARD CURRENT (A) F V , INSTA NTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F T - 25ºCj I Pulse Width = 300 sF µ 100 1000 0.1 1 10 100 C , JUNCTION CAPACITANCE (pF) j V , REVERSE VOL T AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C
1 MHz
j 0 20 40 60 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 1.0 25 50 75 100 125 150 I A VERAGE FORWARD CURRENT (A) V), T, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) T = 100 Cj ° 10BQ020 – 10BQ200 10BQ020 – 10BQ200 020 - 040 050 - 060 080 - 100 150-200