DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Low ON Resistance
  • Low Gate Charge
  • 100% Avalanche Tested
  • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDP NDD Unit Drain−to−Source Voltage VDSS 500 V Continuous Drain Current R/C0113JC ID 3.4 3.0 A Continuous Drain Current R/C0113JC, TA = 100°C ID 2.1 1.9 A Pulsed Drain Current, VGS @ 10 V IDM 14 12 A Power Dissipation R/C0113JC PD 75 61 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 3.4 A EAS 120 mJ ESD (HBM) (JESD22−A114) Vesd 2800 V Peak Diode Recovery dv/dt 4.5 (Note 1) V/ns Continuous Source Current (Body Diode) IS 3.4 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. I D /C0118 3.4 A, di/dt ≤ 200 A//C0109s, VDD ≤ BVDSS, TJ ≤ 150°C. http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. MARKING AND ORDERING INFORMATION VDSS RDS(on) (MAX) @ 1.5 A 500 V 2.7 /C0087 TO−220AB CASE 221A STYLE 5 DPAK CASE 369AA STYLE 2 1 2 IPAK CASE 369D STYLE 2 2 3 2 3 N−Channel G (1) D (2) S (3)

NDP04N50Z, NDD04N50Z http://onsemi.com THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDP04N50Z NDD04N50Z R/C0113JC 1.6 2.0 °C/W Junction−to−Ambient Steady State (Note 2) NDP04N50Z (Note 3) NDD04N50Z (Note 2) NDD04N50Z−1 R/C0113JA 51 2. Insertion mounted 3. Surface mounted on FR4 board using 1 ″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage BVDSS VGS = 0 V, ID = 1 mA 500 V Breakdown Voltage Temperature Coefficient /C0068BVDSS/ /C0068TJ Reference to 25°C, ID = 1 mA

0.6 V/°C

Drain−to−Source Leakage Current IDSS VDS = 500 V, VGS = 0 V 25°C 1 /C0109A 150°C 50 Gate−to−Source Forward Leakage IGSS VGS = ±20 V ±10 /C0109A ON CHARACTERISTICS (Note 4) Static Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 1.5 A 2.3 2.7 /C0087 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 50 /C0109A 3.0 4.5 V Forward Transconductance gFS VDS = 15 V, ID = 1.5 A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1.0 MHz 308 pF Output Capacitance Coss 43 Reverse Transfer Capacitance Crss 9 Total Gate Charge Qg VDD = 250 V, ID = 3.4 A, VGS = 10 V 12 nC Gate−to−Source Charge Qgs 2.6 Gate−to−Drain (“Miller”) Charge Qgd 6.1 Plateau Voltage VGP 6.6 V Gate Resistance Rg 5.4 /C0087 RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time td(on) VDD = 250 V, ID = 3.4 A, VGS = 10 V, RG = 5 /C0087 9 ns Rise Time tr 9 Turn−Off Delay Time td(off) 16 Fall Time tf 10 SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage VSD IS = 3.4 A, VGS = 0 V 1.6 V Reverse Recovery Time trr VGS = 0 V, VDD = 30 V IS = 3.4 A, di/dt = 100 A//C0109s 240 ns Reverse Recovery Charge Qrr 0.9 /C0109C 4. Pulse Width ≤ 380 /C0109s, Duty Cycle ≤ 2%.

Figure 1. On−Region Characteristics

7.0 VVGS = 10 V

Figure 2. Transfer Characteristics Figure 3. On−Region versus Gate−to−Source Figure 4. On−Resistance versus Drain Figure 5. On−Resistance Variation with Figure 6. BVDSS Variation with Temperature

NDP04N50Z, NDD04N50Z http://onsemi.com

ORDERING INFORMATION

Order Number Package Shipping† NDP04N50ZG TO−220AB (Pb−Free)

50 Units / Rail

(In Development) NDD04N50Z−1G IPAK (Pb−Free)

75 Units / Rail

(Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS A = Location Code Y = Year WW = Work Week G = Pb −Free Package NDP04N50ZG AYWW Gate Source Drain Gate Drain 3 Source DrainYWW 50ZG Drain Drain Gate Source YWW 50ZG

NDP04N50Z, NDD04N50Z http://onsemi.com PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.161 3.61 4.09 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE−T− C ST U R J

NDP04N50Z, NDD04N50Z http://onsemi.com PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE B b D E e M0.005 (0.13) C A c C Z DIM MIN MAX MIN MAX MILLIMETERSINCHES D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 A 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 BSC 2.29 BSC b3 0.180 0.215 4.57 5.46 L 0.055 0.070 1.40 1.78 L3 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY . 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.12 3 H 0.370 0.410 9.40 10.41 A1 0.000 0.005 0.00 0.13 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC HDETAIL A SEATING PLANE A B C L H L2 GAUGE PLANE DETAIL A ROTATED 90 CW/C0053 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT*

NDP04N50Z, NDD04N50Z http://onsemi.com PACKAGE DIMENSIONS STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 123 V S A K −T− SEATING PLANE R B F G D 3 PL M0.13 (0.005) T C E J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.090 BSC 2.29 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Z IPAK CASE 369D−01 ISSUE B ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 NDD04N50Z/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative