04M0 MICROSEMI | Alldatasheet
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Technical content
580 Pleasant St. Phone: 617-924-9280 Watertown, MA 02472 Fax : 617-924-1235 DIE SPECIFICATION 100V 300mA MONOLITHIC DIODE ARRAY5 FEATURES:
- INDIVIDUAL DIODES EQUIVALENT TO 1N4148
- Vf MATCH TO 5 mV at 10 mA
- ULTRA-HIGH SPEED SWITCHING
- QUAD ISOLATED DIODES Symbol Parameter Limit Unit VBR(R) *1 *2 Reverse Breakdown Voltage 100 Vdc IO *1 Continuous Forward Current 300 mAdc IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc Top Operating Junction Temperature Range -65 to +150 °C Tstg Storage Temperature Range -65 to +200 °C NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% Symbol Parameter Conditions Min Max Unit BV1 Breakdown Voltage IR = 100uAdc 100 BV2 Breakdown Voltage IR = 5uAdc 75 Vf1 Forward Voltage IF = 100mAdc *1 1 Vdc IR1 Reverse Current VR = 40 Vdc 0.1 uAdc IR2 Reverse Current VR = 20 Vdc 25 nAdc Ct Capacitance (pin to pin) VR = 0 Vdc; f = 1 MHz 4.0 pF tfr Forward Recovery Time IF = 100mAdc 15 ns trr Reverse Recovery Time IF = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms 5 ns VF5 Forward Voltage Match IF = 10 mA 5 mV NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice. MSC1023.PDF Rev - 11/25/98 Packaging Options: W: Wafer (100% probed ) U: Wafer (sample probed) D: Chip (Waffle Pack ) B: Chip (Vial) Metallization Options: Standard: Al Top / Au Backside (No Dash #) Processing Options: Standard: Capable of JANTXV application (No Suffix) Suffix C : Commercial
ORDERING INFORMATION
PART #: 04M0_ _- _ First Suffix Letter: Packaging Option Second Suffix Letter: Processing Option Dash #: Metallization Option Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified 04M0 .049" .023" C C C A A A A CAbsolute Maximum Ratings: