0405SC-1000M

0405SC-1000M MICROSEMI | Alldatasheet

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Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to a series of High Power Silicon Carbide Transistors from Microsemi PPG. CASE OUTLINE 55KT FET (Common Gate) 1 = Drain 2 = Gate 3 = Source ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) 250V Gate-Source (VGS) -1V Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature +250 °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Idss Drain-Source Leakage Current V GS = -20V, VDG= 125V 750 µA Igss Gate-Source Leakage Current V GS = -20V, VDS = 0V 50 µA θJC 1 Thermal Resistance 0.15 ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 250 mA, Freq = 406, 425, 450 MHz, GPG Common Gate Power Gain Pout = 1000 W, Pulsed 8 8.5 dB Pin Input Power Pulse Width = 300us, DF = 10% 140 155 W ηd Drain Efficiency F = 450 MHz, P out =1000W 50 % ψ Load Mismatch F = 406 MHz, P out = 1000W 10:1 Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 180 W 1100 W Vgs Gate source Voltage Set for Idq(ave) = 250mA 3.0 10.0 Volts Feb 2009 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. Typical RF Performance Curve 0405SC-1000M: Gain & Pout 300us 10% 125V 10 20 40 82 132 164 181 Pin (W) Gain(db) 100 200 300 400 500 600 700 800 900 1000 1100 1200 Pout(W) gain Pout 0405SC-1000M: drain efficiency 300us 10% 125V 10% 15% 20% 25% 30% 35% 40% 45% 50% 55% 60% 10 20 40 82 132 164 181 Pin(W) Drain eff (%) drain efficiency 0405SC-1000M

Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. Test Circuit board Part Description Part Description C1, C15 270 pF chip capacitor (ATC 100B) L1 5 turns 18AWG IDIA 0.2 in C2 3.3 pF chip capacitor (ATC 100B) L3 6 turns 18AWG IDIA 0.2 in C3, C9 15 pF chip capacitor (ATC 100B) L2, L4 Ferrite Coil inductor C4 4.7 pF chip capacitor (ATC 100B) Z1 70 x 296 mils (W X L) C5 22 pF chip capacitor (ATC 100B) Z2 70 x 1160 mils (W X L) C6, C11 33 pF chip capacitor (ATC 100B) Z3 200 x 1085 mils (W X L) C7 470 pF chip capacitor (ATC 100B) Z4 397 x 390 mils (W X L) C8 300 pF chip capacitor (ATC 100B) Z5 150 x 240 mils (W X L) C10 20 pF chip capacitor (ATC 100B) Z6 150 x 1276 mils (W X L) C12 3.3+10 pF chip capacitor (ATC 100B) Z7 190 x 433 mils (W X L) C13, C14 1.8 pF chip capacitor (ATC 100B) Z8 71 x 2011 mils (W X L) C16 330 pF chip capacitor (ATC 100B) Z9 71 x 94 mils (W X L) C17 1000pF chip capacitor(ATC 900C) Z10 415 x 401 mils (W X L) C18 0.1uF chip capacitor(ATC 920C) Z11 150 x 2404 mils (W X L) C19 1000uF Electrolytic Capacitor PCB RG6006 εr=6.15, 50 mils, 1 oz Note All Z dimentions included bend 0405SC-1000M Test Circuit Components Designations and Values 0405SC-1000M Source Pulser

Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. Impedance Information 0405SC-1000M ZS ZL Typical Impedance Values Frequency (MHz) Z S(Ω) Z L(Ω) 406 1.33 – j1.30 2.14 + j0.67 425 1.35 – j 0.95 1.89 + j 0.98 450 1.33 – j 0.596 1.49 + j 1.43 * V DD = 125V, IDQ = 250 mA, Pout = 1000W * Pulse Format: 300µs, 10% Long Term Duty Factor Input Matching Network Output Matching Network

Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. Case Outline 55 KT FET 0405SC-1000M