03P4J TGS | Alldatasheet
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Technical content
■ Features
- High Anode to Cathode Voltage VDRM,VRRM=200V(03P2J) VDRM,VRRM=400V(03P4J) VDRM,VRRM=500V(03P5J) 1.Gate 2.Anode 3.Cathode 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.) Parameter Symbol Test Conditions Min Typ. Max Unit Gate Non-Trigger Voltage VGD VDM=1/2VDRM,TJ = 125℃ 0.1 V VDRM=VRRM,RGK=1KΩ,Tj=25℃; 10 VDRM=VRRM,Tj=125℃; 100 On-state Voltage VTM IT=1A 1.6 Gate Trigger Voltage VGT VDM=6V, RL=100Ω 0.8 Gate Trigger Current (Continuous dc) IGT VDM=6V, RL=100Ω 200 μA Holding Current IH VD=12V, IT=1A 5 mA Critical Rate of rise of off-state Voltage dV/dt VDM=2/3VDRM, Tj=125 ℃ 40 V/us Circuit Commutated turn-off time tq VD=2/3VDRM, Tj=125℃,TM=200mA; VR≥25VdITM/dt=15A/us,dVD/dt=20V/us; 25 uS Off-state Leakage Current ID,IR uA V SCR Thyristor 03P2J/03P4J/03P5J Parameter Symbol 03P2J 03P4J 03P5J Unit Repetitive Peak Reverse Voltages @ IRRM=100uA VRRM 200 400 500 Repetitive Peak Off-State Voltages @ IDRM=100uA VDRM 200 400 500 Average on-state Current (Ta = 77℃Single phase half wave) IT(AV) Forward Current RMS IT(RMS) Non-Repetitive Peak on-state Current (f=50Hz,1cycle) ITSM Circuit Fusing Considerations (1ms≤ t ≤10ms) I2t A2s Peak Gate Current ─ Forward (f≥50Hz,duty≤10℅) IGFM A Peak Gate Voltage ─ Reverse VGRM V Peak Gate Power ─ Forward (f≥50Hz,duty≤10℅) PGM Average Gate Power ─ Forward PGF(AV) Thermal Resistance Junction to Ambient Rth(j-a) ℃/W Junction Temperature TJ Storage Temperature Range Tstg 100 0.3 0.47 mW A 125 -55 to 150 0.15 0.1 ■ hFE ClassificationMarking NO 03P2J 03P4J 03P5J Marking 03P2J 03P4J 03P5J TIGER ELECTRONIC CO.,LTD
■ Typical Characterisitics SCR Thyristor 03P2J/03P4J/03P5J
■ Typical Characterisitics SCR Thyristor 03P2J/03P4J/03P5J