039 MICROSEMI | Alldatasheet
Document overview
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Technical content
M Dim. Inches Millimeter XX : 4° Minimum Maximum Minimum Maximum Notes (d= 8 — 8B 677 685 17.20 17.40 J D 1.200 1.250 30.48 31.75 + i. rN R — 427 447 10.84 11.35 Fo MNS 155 2.92 3.94 P TP i Ho --- 249 --- 6.32 2 J .200 300 5.08 7.62 N 065 085 1.65 215 E P 145 155 3.68 3.93 Dio. S025 .030 64 76 Note 1: 1/4-28 UNF-3A Note 2: Full thread within 2 1/2 threads TO-—208AC (10-65) Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking e dv/dt-200 V/usec VDRM, VRRM 1000 amperes surge current Ooootene 4 ad ® Low forward on-state voltage O3906CRF 600 500 ® Blocking voltages up to 600 volts To specify dv/dt other than 200V/usec., enter appropriate @ Primarily for forced letter in place of "G’: K 300V/usec. commutated applications H 500V/usec.
Electrical Characteristics
Max. RMS on-state current 'T(RMS) 63 Amps TC = 105°C, half sine wave, REJC = 0.35°C/W Max. average on-state cur. 'T(AV) 40 Amps TC = 105°C, half sine wave, ROC = 0.35°C/W Mox. peak on-state voltage VIM 1.8 Volts 'TM = 120 A(peak) Max. holding current 'H 500 mA ° Max. peak one cycle surge current 'TsM 1000 A TC = 105°C, 60Hz Max. I?t capability for fusing rt 4150A2S t= 83 ms TC = 25°C unless otherwise noted Thermal and Mechanical Characteristics Operating junction temp range Ty -65°C to 125°C Storage temperature range TsT¢ 65°C to 150°C Maximum thermal resistance Rouc 0.35°C/W — dunction to case Typical thermal resistance (greased) ‘CS 0.20°C/W Case to sink Mounting torque 25-30 inch pounds Weight 0.56 ounces (16 grams) typical 8-31-00 Rev. 2 . COLORADO 800 Hoyt Street Broomfield, CO. 80020 icrosemi 2" FAX: (303) 466-3775 www.microsemi.com
Critical rate of rise of on-state current (note 1) —di/dt 400A /usec. Ty = 125°C Typical delay time (note 1) td 2.0 usec. Maximum circuit commuted turnoff time (note 2) tg (R) 10 usec. Ty = 125°C tq (1) 12 usec. TJ = 125°C tq (P) 15 usec. TJ = 125°C tq (U) 20 usec. Ty = 125°C Note 1: 'TM = 50A, VD = VDRM. VGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: 'TM = 50A, di/dt = -5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated YDRM, VGT = OV Note 3: To specify tq other than 10 usec., enter appropriate letter in place of "R” T-12 usec., P-15 usec., U-20 usec. Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Max. nontriggering gate voltage Veo 0.15V Ty = 125°C Max. gate current to trigger ‘GT 150mA Ty = 25°C Max. peak gate power Pom 10W Average gate power Pe(Av) 2.0W tp = 10 usec. Max. peak gate current ‘GM 3.0A Max. peak gate voltage (forward) Vom 20V Max. peak gate voltage (reverse) Vom 10V Blocking Mox. leakage current 'DRM 12mA Ty = 125°C & VDRM Max. reverse leakage 'RRM 12mA Ty = 125°C & VRRM Critical rate of rise of off—state voltage dv/dt 200V/usec. Ty = 125°C 8-31-00 Rev. 2
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40 Average On-State Current — Amperes
Sot TTT TT TTT TTT) mess 3 2 Transient Thermal Impedance & 35 — LTE ETE) Seo a 2° WN | < AC a a D 8 eee eee i WA es ee A Sree PLT TTT TTT TTT) eto 5 2 52 og Le ET LT TT Z S2 CL LM TMT TT Hl Til S44 3£ 0 10 14 18 22 26 30 34 38 001 a on 10 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating y Maximum Nonrepetitive Surge Current § 130 5 1000 a Sis Rpt ttt tt tt 2 wo) [Itt tT ttl NNR eee eR INNS ee 8 5 INS +> ~ £ 700 d 8 5 NNN SS oe eNO Foot ALN INN N [LI vp | Li Pt tt So tt tt TEE TT |g ol TTT ES 5 400 [> Eel boll oof olf feof [] gl 1 LO PE TI 3 gs 10H 1205 S300 0 5 10 15 20 25 30 35 40 45 50 1 10 100 Average On-State Current - Amperes Number of Cycles 8-31-00 Rev. 2