035 MICROSEMI | Alldatasheet
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Technical content
Silicon Controlled Rectifier /Inverter M Tr ~*~ Ns , 5 Minimum Maximum Minimum Maximum Notes (dot +8 = B 677 685 17.20 17.40 J D 1.200 1.250 30.48 31.75 | F --N R E427 447 10.84 11.35 Fo 115 155 2.92 3.94 J .200 300 5.08 7.62 i N 065 085 1.65 215 Po 145 155 3.68 3.93 Dia. a= an R055 065 1.40 1.65 Dia S025 .030 64 76 Note 1: 1/4-28 UNF-3A Note 2: Full thread within 2 1/2 threads TO-—208AC (TO-65) Microsemi Forward & Reverse Catalog Number Repetitive Blocking o3s08e(2)¢ NORM VRRM e dv/dt-200 V/usec e daoaae 1000V 1000 amperes surge current 035126(2)F 1200V Low forward on-state voltage Notel:To specify dv/dt other than 200V/usec., enter appropriate ® Blocking voltages up to letter in place of "G": K 300V/usec. 1200 volts 4 foo faces ® Primarily for forced ‘usec. H a Note 2:To specify tq, enter appropriate letter in (2) commutated applications W-30 usec X-40 usec
Electrical Characteristics
Max. RMS on-state current 'T(RMS) 63 Amps TC = 100°C, half sine wave, ReJC = 0.35°C/W Max. average on-state cur. 'T(AV) 40 Amps TC = 100°C, half sine wave, RUC = 0.35°C/W Max. peak on-state voltage VIM 2.8 Volts "TM = 120 A(peak) Max. holding current 'y 500 mA Max. peak one cycle surge current 'TsM 800 A TC = 100°C, 60Hz Max. I2t capability for fusing (2t 26504 S t = 8.3 ms TC = 25°C unless otherwise noted Thermal and Mechanical Characteristics Operating junction temp range TW -65°C to 125°C Storage temperature range TSTG -65°C to 150°C Maximum thermal resistance Reuc 0.35°C/w Junction to case Typical thermal resistance (greased) Recs 0.20°C/W Case to sink Mounting torque 25-30 inch pounds Weight 0.56 ounces (16 grams) typical ° LAWRENCE 2 6 Lake Street 04-24-07 Rev. 2 Lawrence, MA 01841 MICFOSCIN] FG3 tao FAX: (978) 689-0803 wwm.microsemi.com
Critical rate of rise of on-state current (note 1) —di/dt 200A /usec. Ty = 125°C Typical delay time (note 1) td 2.0 usec. Maximum circuit commuted turn-off time (note 2) tq (W) 30 usec. Ty = 125°C tq (x) 40 usec. TJ = 125°C Note 1: 'TM = 50A, VD = VDRM. VGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: TM = 50A, di/dt = —5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec..YGT = OV Triggering Max. gate voltage to trigger Vet 20Vv Ty = 25°C Max. nontriggering gate voltage Veo 0.15V Ty = 125°C Max. gate current to trigger ‘oT 150mA Ty = 25°C Max. peak gate power Pom 10W Average gate power PG(AV) 2.0W tp = 10 usec. Max. peak gate current ‘CM 3.0A Max. peak gate voltage (forward) Vom 20V Max. peak gate voltage (reverse) Vom 10V Blocking Max. leakage current 'RRM, 'ORM 20mA Ty = 125°C & VDRM,VRRM Max. reverse leakage 'RRM, ORM 500 pA Ty = 25°C & YRRM,YRRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty = 125°C 04-24-07 Rev. 2
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6 (UT TTT TTT TTT TT) 83 4 a a Y) oe ee B24 53 oo eed LULU TAT Z 2 CL Ill TMT TILT I 10 14 18 22 26 30 34 38 001 oO ot 10 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 . Forward Current Derating § 125 Ne i, SGaSeeee mCNSECCCC * oe AAT TT = 110 Na NS S ost I NNN ONE TT P’CCE NINN NT g FCO ee é 95 5 ot LL ol lool odd ool | | 0 5 10 15 20 25 30 35 40 45 50 Average On-State Current - Amperes 04-24-07 Rev. 2