02N60S4 VBSEMI | Alldatasheet

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  • Low Gate Charge Q g Results in Simple Dr ive Requirement  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche Voltage and Current  Compliant to RoHS directive 2002/95/EC Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig. 12). c. ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Drain current limited by maximum junction temperature. PRODUCT SUMMARY VDS (V) 650 RDS(on) (Ω)V GS = 10 V 1.7 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Single Available RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise note d PARAMETER SYMBOL LIMIT UNIT Drain-Source Volta ge VDS 650 V Gate-Source Voltage VGS ± 30 Continuous Drain Currente VGS at 10 V TC = 25 °C ID AContinuous Drain Current TC = 100 °C 4.2 Pulsed Drain Currenta IDM 18 Linear Derating Factor 0.48 W/°C Single Pulse Avalanche Energyb EAS 325 mJ Repetitive Avalanche Currenta IAR 4 A Repetitive Avalanche Energya EAR 6m J Maximum Power Dissipation TC = 25 °C PD 60 W Peak Diode Recovery dV/dtc dV/dt 2.8 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

S N-Channel MOSFET G D T O-220AB Top View GD S 4.5 N-Channel 650 V (D-S) MOSFET www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 02N60S4 A ll data sheet.com

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. d. t = 60 s, f = 60 Hz. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum J unction-to-Ambient RthJA -6 5 °C/W Maximum Junction-to-Case (Drain) RthJC -2 .1 SPECIFICATIONS TJ = 25 °C, unless oth erwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 650 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, I D = 1 mAd - 670 - mV/°C Gate-Source Thresho ld Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 - 4.5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 25 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) V GS = 10 V ID = 3.1 Ab - - Ω Forward Transconductance gfs VDS = 50 V, ID = 3.1 A 3.9 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1017 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -7 . 0- Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 1912 - VDS = 520 V, f = 1.0 MHz - 48 - Effective Output Capacitance Coss eff. VDS = 0 V to 520 Vc -8 4- Total Gate Charge Qg VGS = 10 V ID = 3.2 A, VDS = 400 V see fig. 6 and 13b -- 4 8 nC Gate-Source Charge Qgs -- 1 2 Gate-Drain Charge Qgd -- 1 9 Turn-On De lay Time td(on) VDD = 325 V, ID = 3.2 A RG = 9.1 Ω, RD = 62 Ω, see fig. 10b -1 4 - ns Rise Time tr -2 0- Turn-O ff Delay Time td(off) -3 4- Fall Time tf -1 8- Drain-Source Body Diode Characteristics Continuo us Source-Drain Diode Current I S MOSFET symbol showin g the integral reverse p - n junction diode -- 4 A Pulsed Diode Forward Currenta ISM -- 2 1 Body Diode Voltage VSD TJ = 25 °C, IS = 3.2 A, VGS = 0 Vb -- 1 . 5 V Body Diode Reverse Recovery Ti me trr TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µsb - 493 739 ns Body Diode Reverse Recovery Charge Qrr -2 . 1 3 . 2 µ C F orward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G 7 1. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 02N60S4 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig . 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 0.1 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1 1 10 100 20µs PULSE WIDTH T = 150 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1 V = 100V 20µs PULSE WIDT H DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 2.0 3.5 5.0 5.5 8.0 T , Juncti on Temperature ( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 3.2A www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 02N60S4 A ll data sheet.com

Fig. 5 - Typical Capacitance vs. Drain-to-Sou rce Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 400 800 1200 1600 2000 1 10 100 1000 C, Capacita nce (pF) DSV , Drain-to-Source Voltage (V) A V = 0V, f = 1M Hz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd iss oss rss 0 10 20 30 40 50 Q , Total Gate Ch arge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 3.2 A V = 130VDS V = 325VDS V = 520VDS 0.1 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 0.1 10 100 1000 10000 OPERATION IN THIS A REA LIMITED BY RDS(on) Single P ulse T T = 150 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 02N60S4 A ll data sheet.com

Fig. 9 - Maximum Drain Current vs. Case Temp erature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 T , Case Temp erature ( C) I , Drain Current (A) D VDS Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V - VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Puls e Duration (s) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) A R G IAS 0.01 Ωtp D.U.T. LVDS - VDD Driver A 15 V 20 V tp V DS IAS www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 02N60S4 A ll data sheet.com

Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Typical Drain-to Source Voltage vs. Avalanche Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit 25 50 75 100 125 150 200 400 600 800 Starting T , Junction Temperature ( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 2.3A 3.3A 700 720 740 760 780 800 0123456 A DSav avI , Avalanche C urrent (A) V , Avalanche Voltage (V) QG QGS QGD VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 02N60S4 A ll data sheet.com

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor crurent D = P.W. Period * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit RG VDD

  • dV/dt controlled by RG
  • Driver same type as D.U.T.
  • ISD controlled by duty factor "D"
  • D.U.T. - device under test D.U.T. Circuit layout considerations
  • Low stray inductance
  • Ground plane
  • Low leakage inductance current transformer www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 02N60S4 A ll data sheet.com
  • M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 02N60S4 A ll data sheet.com