023 MICROSEMI | Alldatasheet
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Technical content
Silicon Controlled Rectifier A 8 . — C |_| Dim. Inches Millimeters H (Note 2) q |] J (Note 3) Min. Max. — Min. Max. Notes so) LY A 0.495 0.505 12.57 12.83 F a ¢j B 0.068 0.080 1.73 2.03 | ll | C 0.150 0.160 3.81 4.06 \\ D 0.705 0.754 “17.91 19.15 D { + G E 0.350 0.374 8.89 9.50 : F 0.345 0.380 8.76 9.65 G 0600 0.714 15.24 18.14 (Note 1) 1. Anode connected to case |I-— k —-] 2. Cathode terminal 3. Gate terminal Microsemi Forward & Reverse Reverse Transient edv/dt — 200V/uS Catalog Number Repetitive Blocking Blocking e300 Amperes surge current 0230200L 200V 200V 0230300L 300V 300V eLow forward on-state voltage Ee ete Spey Apo e Economical for medium power 0230600L 600V 600V applications e YVORM/ YRRM 200V to 600V
Electrical Characteristics
Max average on-state current 'T(AV)23 Amps Tc = 68°C sine wave, REJC = 1.65°C/W Max peak on-state voltage VFM 1.8 Volts IT = 100A: Ty = 25°C Max holding current IH 80 mA Max peak one cycle surge current ITSM 300 A TJ = 125°C, 8.3mS pulse Max |2t capability for fusing I2t 370 A2s t = 8.3mS Thermal and Mechanical Characteristics Storage temp range TsTG —55°C to 125°C Operating junction temp range TW —55°C to 125°C Max thermal resistance Reuc 1.65°C/W junction to case Typical thermal resistance Recs 1.0°C/W case to sink Weight 0.255 ounces (7.23 grams) typical ° LAWRENCE « 6 Lake Street Lawrence, MA 01841 ICTOSELT) | pi (78) 220-2600 04-24-07 Rev.4 FAX: (978) 689-0803 www.microsemi.com
Critical rate of rise of on-state current (note 1) di/dt 100A/usec. Ty = 125°C Typical delay time (note 1) td 0.5 usec. Typical rise time (note 1) tr 3.0 usec. Typical turn—on time to 3.5 usec. Typical circuit commuted turn-off time (note 2) tg 50 usec. Ty = 125°C Note 1: 'TM = 20A, YD = VDRM. YGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: 'TM = 20A, di/dt = 5A/usec., VR = SOV, dv/dt = 20V/usec., Rated VDRM Triggering Max. gate trigger voltage Vet 2.0V Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate trigger current ‘oT 40mA Max. peak gate power PCM 5.0W Average gate power PC(AV) 0.5W Max. peak gate current ‘GM 3.0A Max. peak gate voltage (forward) Vom 10.0V Max. peak gate voltage (reverse) Vom 5.0V Blocking Max. forward leakage current 'ORM 10uA VorM, Ty =25°C Max. reverse leakage current 'RRM 10uA VRRM, TJ =25°C Max. forward leakage current 'DRM 3.0mA VorM, TJ =125°C Max. reverse leakage current 'RRM 3.0mA VRRM, TJ =125°C Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty =125°C HEAT SINK MOUNTING | i NOM i : | | HEAT SINK ——— 7 Z Z) | L 501 /.505 DIA. 04-24-07 Rev. 4