02050BQ

50BQ020 ZSELEC | Alldatasheet

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Case: SMC/DO-214AB, Molded Plastic S u r g e O v e r l o a d R a t i n g t o8 0A P e a k I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y C l a s s i f i c a t i o n R a t i n g 9 4 V - O G u a r d R i n g D i e C o n s t r u c t i o n For Use in Low Voltage Application 5.0 A SURFACE MOUNT SCHOTTKY BARRIER DIODE Feat ures Schottky Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M echanical Data ! Term inals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version M aximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified Note: 1. Mounted on P.C. Board with 5.0mm 2 c opper pad area. 1 of 2 5.0 A Characteristic 175 A V 250 pF 20 °C/W -55 t o +150 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RMS Reverse Voltage VR( RMS) A verage Rectified Output Current @T L = 95°C (Not e 1) IO Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FS M Forward Voltage @I F = 5.0A V FM P eak Reve r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.2 20 mA Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 1) R/G01JA Operating and Storage Te mperature Range Tj, TST G V 55 0.75 0.85 0.92 V 100 150 105 200 140 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ! Weight: 0.20 grams (approx.) E A B C D F H G SM C/DO-214AB Dim M in Max A 5.59 6. B 6.60 7. C 2.75 3. D 0.152 0. 305 E 7.75 8. F 2.00 2. G 0.051 0. 203 H 0.76 1. All Di mensions in mm 50BQ020 – 50BQ200 30BQ020 – 30BQ200 020 50BQ UnitSymbol 030 50BQ 040 50BQ 050 50BQ 060 50BQ 080 50BQ 100 50BQ 150 50BQ 200 50BQ

Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 50BQ020 – 50BQ200 50BQ020 – 50BQ200 175 100 1000 0.1 1 10 100 C , JUNCTION CAP ACIT ANCE (pF) j V , REVERSE VOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1 MHz j 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5T ypical Reverse Characteristics T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 1.0 4.0 25 50 75 100 125 150 I AVERAGE FOR W ARD CURRENT (A) (AV), T, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L 11 0 100 I , PEAK FORWARD SURGE CURRENT (A) F NUM B ER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive P eak Fwd Surge C urrent Sing le Half-Sine-Wave (JEDEC Method) T = 100° CT 2.0 3.0 5.0 I, INST ANT ANEOUS FORWARD CURRENT (A) F V , INSTA NTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 T - 25ºCJ I Pul se Width = 300 sF µ 150-200 080 - 100 050 - 060 020 - 040