20BQ020 ZSELEC | Alldatasheet
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Features
! Sc hottky Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanic al Data ! T erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number Lead Free: For RoHS / Lead Free Version Maximum R atings and Electrical Characteristics @TA=25° C unless otherwise specified Note: 1. Mounted on P.C. Board with 5.0mm 2 copper pad area. 1 of 2 0.55 0. 70 0.85 0.90 V 2.0 A 14 21 28 35 42 56 70 105 140 V 20 30 40 50 60 80 100 150 200 V P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RM A v erage Rectified Output Current @T L = 75° C I O Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward V oltage @I F = 2 .0A V FM P eak Reverse Current @T A = 25° C At Rated DC Blocking Voltage @T A = 100° C IRM 0.2 20 mA T ypical Thermal Resistance (Note 1) R/G01JL R/G01JA 88 °C/ W Operat i ng Temperature Range Tj -55 to +150 ° C S t orage Temperature Range TSTG -55 to +150 ° C Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ! Weight: 0.093 grams (approx.) E SMB /DO-214AA Dim M in Max A 3.30 3. B 4.06 4. C 1.96 2. D 0.15 0. E 5.00 5.59 F 2.00 2. G 0.10 0.20 H 0.76 1. All Di mensions in mm A B C D F H G 20BQ020 – 20BQ200 20BQ020 – 20BQ200 020 20BQ UnitSymbol 030 20BQ 040 20BQ 050 20BQ 060 20BQ 080 20BQ 100 20BQ 150 20BQ 200 20BQ
0.01 0.1 1.0 0 0.4 0.8 1.2 I, INST ANT ANEOUS FORWARD CURRENT (A) F V , INSTANT ANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F T - 25ºCj I PulseW idth = 300 sF µ 100 1000 0.1 1 10 100 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOLT AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f =1 MHz j 0 20 40 60 80 100 120 140 I , INSTANT ANEOUS REVERSE CURRENT (mA) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 TypicalReverse Characteristics T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 1.0 2.0 25 50 75 100 125 150 I A VERAGE FOR WARD CURRENT (A) (AV), T, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L 2 of 2 1 10 100 I , PEAK FOR W ARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig.
3 Max Non-Repetitive Peak Fwd Surge Current
(JEDEC Method) T = 100 Cj ° Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 20BQ020 – 20BQ200 1.0 20BQ020 – 20BQ200 020 - 040 050 - 060 080 - 100 150-200