02009-DSH-001-D MA-COM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 19
Technical content
Features
Low cost IC fabricated in CMOS. Receiver sensitivity better than -32 dBm @ 622 Mbps. Minimum 340 MHz bandwidth and multi-pole roll off allows a wide range of operation up to 622 Mbps. Typical differential transimpedance at low signal levels of 40 Ω. AGC gives continuous operation to +3 dBm > 33 dB power-supply noise rejection. Typical 130 mW power co msumption at 3.3V supply. Monitor output gives li near indication of received optical power. Differential output.
ii Mindspeed Technologies™ 02009-DSH-001-D Mindspeed Proprietary and Confidential M02009 Data Sheet * Consult price list for exact part number when ordering.
Ordering Information
Part Number Package Operating Temperature MC2009-XX* Waffle Pack –40 °C to 85 °C MC2009-XX* Expanded whole wafer on a ring –40 °C to 85 °C
Revision History
D Preliminary July 2004 Updated Block Diagram and Top Level Diagram Updated Absolute Maximum Ratings Updated AC Characteristics
02009-DSH-001-D Mindspeed Technologies™ iii Mindspeed Proprietary and Confidential Table of Contents
02009-DSH-001-D Mindspeed Technologies™ v Mindspeed Proprietary and Confidential List of Tables
02009-DSH-001-D Mindspeed Technologies™ 1 Mindspeed Proprietary and Confidential
1.0 Functional Description
1.1 Overview
The MC2009 is a low-noise, transimpedance amplifier with AGC, manufactured in low-cost CMOS. Its wide dynamic range, differential output and high PIN bias make it well suited for telecommunications, especially OC-12/ STM-4. However, the MC2009 is intended to meet the needs of both Telecom and Datacom users. The MC2009 is available in die form. For optimum system performance die should be mounted in close proximity with the photodetector. The MC2009 is designed to be used with the Mindspeed MC2044C Postamplifier IC. When combined with a pho- todiode, the chip set forms a high performance, low cost 3.3V receiver. Figure 1-1. M02009 Block Diagram DC Restore 2.5 k Phase Splitter B.I.S.T. EN AGC PINA PINK MON DOUT DOUT 2.6 V 1 V DC Shift
02009-DSH-001-D Mindspeed Technologies™ 2 Mindspeed Proprietary and Confidential
1.2 Features
Low cost IC fabricated in CMOS. Receiver sensitivity better than -32 dBm @ 622 Mbps. Minimum 340 MHz bandwidth and multi-pole roll off allows a wide range of operation up to 622 Mbps. Typical differential transimpedance at low signal levels of 40 Ω. AGC gives continuous operation to +3 dBm > 33 dB power-supply noise rejection. Typical 130 mW power comsumption at 3.3V supply. Monitor output gives linear indication of received optical power. Differential output.
1.3 General Description
1.3.1 TIA (Transimpedance Amplifier)
The transimpedance amplifier consists of a high gain single-ended CMOS amplifier, with a feedback resistor. The feedback creates a virtual low impedance at the input and virtually all of the input current passes through the feed - back resistor, defining the voltage at the output. Advanced CMOS design techniques are employed to maintain the stability of these stages across all input conditions. Figure 1-2. Top level diagram PINK MON VCC DOUT DOUTB AGC GND PINA
3 Mindspeed Technologies™ 02009-DSH-001-D
Mindspeed Proprietary and Confidential M02009 Data Sheet Single-ended amplifiers have inherently poor power supply noise rejection. For this reason, an on-chip low dropout linear regulator has been incorporated into the design to give excellent noise rejection up to several MHz. Higher frequency power supply noise is removed by external decoupling. The circuit is designed for PIN photodiodes in the “grounded cathode” configuration, with the anode connected to the input of the TIA and the cathode connected to AC ground. Reverse DC bias is applied to reduce the photodiode capacitance.
1.3.2 AGC
The MC2009 has been designed to operate over the input range of +3 dBm to –32 dBm at long wavelengths. This represents a ratio of 1:3000, whereas the acceptable dynamic range of the output is only 1:100 which implies a compression of 30:1 in the transimpedance. The design uses a MOS transistor to achieve the transimpedance variation. Another feature of the AGC is that it is only operates on signals greater than –20 dBm (@ 0.9A/W). This knee in the gain response is important when setting “signal detect” functions in the following postamplifier. It also aids in active photodiode alignment. The AGC pad allows the AGC to be disabled during photodiode alignment by grounding the pad through a low impedance. The AGC control voltage can be monitored during normal operation at this pad by a high impedance (>10 MΩ) circuit. In addition, taking this pad to V CC +1.2V enables an internal test oscillator which supplies a 1 MHz 10 uA pk(approximate) square wave current internally between the PIN K and PIN A pads to emulate a pho- todiode for test purposes.
1.3.3 Output Stage
The signal from the TIA enters a phase splitter and a pair of voltage follower outputs. These are designed to drive a high impedance (>500Ω) load. They are stable for driving capacitive loads such as interstage filters. Each output has its own GND pad, all four GND pads on the chip should be connected for proper operation. Since the MC2009 exhibits rapid rolloff, external filtering is not required.
1.3.4 Monitor Output
High impedance output sinks a 1:1 replica of average photodiode current for monitoring purposes. Note that this output is provided because in this device it is not possible to connect the photodiode cathode to Vcc. For the correct operation of the AGC and DC restore, the photodiode cathode must be connected to the PINK pin. The MC2009 measures the photodiode current and uses this information to set the transimpedance and reduce the DCoffset of the outputs. To convert this output to a voltage, a resistor to Vcc should be used. Note that for linearity, ensure that Vmon is always > 1V.
02009-DSH-001-D Mindspeed Technologies™ 4 Mindspeed Proprietary and Confidential Figure 1-3. Typical Performance (1 of 3) Typical Bandwidth vs. Photodiode Capacitance Sensitivity vs Responsivity vs Photodiode Capacitance Photodiode Capacitance (pF) -3 dB Optical Bandwidth (MHz) 300 350 400 450 500 1.2 Cpd (pF) Sensitivity (dBm) 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 0.2 -32 -30 -28 -26 c c Respd (A/W) 1.0 1.2
5 Mindspeed Technologies™ 02009-DSH-001-D
Mindspeed Proprietary and Confidential M02009 Data Sheet Figure 1-4. Typical Performance (2 of 3) Monitor Ratio Supply Voltage vs Average Supply Current Input Current v Average MONITOR Current @Vcc=3.3V 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 Input Current (mA) MONITOR Current (mA) 85C 21C -40C Supply Voltage v Average Supply Current 20.00 22.00 24.00 26.00 28.00 30.00 32.00 34.00 36.00 Supply Voltage (V) Supply Curr ent (mA) +85C +21C -40C
02009-DSH-001-D Mindspeed Technologies™ 6 Mindspeed Proprietary and Confidential Figure 1-5. Typical Performance (3 of 3) PINK Input Current vs Average PINK Voltage Eye Diagram @ - 20 dBm PINK Input Current v AveragePIN K Voltage @Vcc=3.3V 0.000 0.500 1.000 1.500 2.000 2.500 3.000 0.0001 0.001 0.01 0.1 1 10 PINK Input Current (mA) Average PIN K Voltage (V) 85C 21C -40C Input Current v DOUT Average Transimpedance @ 21C 1000 10000 100000 0.1 1 10 100 1000 Input Current (uA pk-pk) Transimpedance (Ohms) 3.6V 3.3V 3.0V Input Current vs Dout Average Transimpedance
7 Mindspeed Technologies™ 02009-DSH-001-D
Mindspeed Proprietary and Confidential M02009 Data Sheet
1.3.5 Assembly
The M02009 is designed to work with a wirebond inductance of 1 nh +/- 0.25 nh. Many existing TO-Can configura- tions will not allow wirebond lengths that short, since the PIN diode submount and the TIA die are more than 1 mm away in the vertical direction, due to the need to have the PIN diode in the correct focal plane. This can be remedi- ated by raising up the TIA die with a conductive metal shim. This will effectively reduce the bond wire length. Refer to Figure 5 on the following page for details. Mindspeed recommends ball bonding with a 1 mil (25µm) gold wire. In addition, please refer to the Mindspeed Product Bulletin (document number 0201X-PBD-001). Care must be taken when selecting chip capacitors, since they must have good low ESR characteristics up to 1 Ghz. It is also important that the termination materials of the capacitor be compatible with the attach method used. Tin/Lead (Pb/Sn) or Tin (Sn) solder finish capacitors are incompatible with silver-filled epoxies. Palladium/Silver (Pd/Ag) terminations are compatible with silver filled epoxies. Solder can be used only if the substrate thick-film inks are compatible with Tin-bearing solders.
02009-DSH-001-D Mindspeed Technologies™ 8 Mindspeed Proprietary and Confidential Figure 1-6. TO-Can Assembly Diagram M02009 Ceramic Shim Submount TO Can Leads (x 4or 5) PIN Diode Wire Bond TO-CAN Header M02009 Ceramic Shim Submount TO Can Leads (x 4or 5) PIN Diode Wire Bond TO-CAN Header NOT Recommended Example Recommended Example Capacitor 470 pF 470 pF Capacitor Metal Shim
9 Mindspeed Technologies™ 02009-DSH-001-D
Mindspeed Proprietary and Confidential M02009 Data Sheet
1.4 Applications
ATM/SDH/SONET PON/FTTH
1.5 Pin Definitions
Table 1-1. Pad Description Name Function GND Ground. Connect to the most negative supply. All pads should be connected DOUT Non-Inverted Data Output. Differential output with DOUT VCC Power. Connect to most positive supply. Either or both pads may be used. PINK Photodiode Cathode connection. Connect photodiode between PINK and PINA. Connect de-coupling cap between PINK and GND (470pF typ). PINA Photodiode Anode connection. Conn ect photodiode between PINA and PINK. DOUT Inverted Data Output. Differential output with DOUT MON Optical input power monitor. Current sink output, current flow into pin. AGC AGC disable/monitor (test mode enable)
02009-DSH-001-D Mindspeed Technologies™ 10 Mindspeed Proprietary and Confidential
2.0 Product Specification
2.1 Absolute Maximum Ratings
2.2 Recommended Operating Conditions
2.3 DC Characteristics
Table 2-1. Absolute Maximum Ratings Symbol Parameter Rating Units VCC Power supply (VCC-GND) 4.5 V TA Operating ambient -40 to +85 °C TJ Junction temperature (die) +150 °C TSTG Storage temperature -65 to +150 °C IMAX Input Overload Current 4.5 MA PP Table 2-2. Recommended Operating System Symbol Parameter Rating Units VCC Power supply (VCC-GND) 3.3 ± 10% V TJ Junction temperature (die) -40 to +100 °C TA Operating ambient temperature -40 to +85 1 °C Table 2-3. DC Characteristics Symbol Parameter Min. Typ. Max. Units VB PIN Photodiode bias voltage (PINK - PINA) 1.5 1.6 1.8 V Voh & VOL Output High and Low Voltages 1.1 1.6 2.4 V VCM Common mode output voltage 1.4 1.6 1.9 V ICC Supply current (no loads) -- 30 45 mA NOTE: 1. Die are tested and guaranteed at 25 °C , and are designed and characterized to operate over the whole temperature range.
11 Mindspeed Technologies™ 02009-DSH-001-D
Mindspeed Proprietary and Confidential M02009 Data Sheet
2.4 AC Characteristics
Table 2-4. AC Characteristics Symbol Parameter Min. Typ. Max. Units ROUT Output impedance (single ended) 3 30 45 60 Ω INOISE Total integrated input referred RMS noise1,2,8 50 70 91 nA G Small signal Transimpedance 3, 4 Single ended Diffferential KΩ BW Bandwidth (-3dB point optical) 1, 5, 8 340 400 460 MHz PSSR Power Supply Rejection Ratio (<4 MHz) 8 27 30 31 dB VD Differential output voltage 3, 8 600 800 1000 mV LF cutoff Lower frequency cutoff (-3 dB corner) 8 -4 0 5 0 K H z OSPULSE Pulse overshoot 1, 8, 9 -1 3 2 0 % TPWD Pulse width distortion 1, 8 -3 8 % TAGC AGC Time constant 6, 8, 11 -3 2 1800 us Jitter Jitter 1, 8, 9 - 145 200 ps, p-p PIN(mean), min Opt ical Sensitivity 1,2,8 -- 3 2 - d B m I max Input Overload Current - - 4.5 mA pp NOTES: 1. Measured with input capacitance, C IN = 0.7 pF 2. Assuming a photodiode responsivity of 0.9 A/W, at an extinction ratio of 10 dB and BER of 10-10 BW=415 MHz 3. The MC2009 is designed to drive a load >500 Ω. 4. Measured at 1 MHz, 1 uA 5. Measured at -30 dBm 6. AGC time constant can be increased by adding a capacitor from AGC pad to ground 7. Worst case occurs at the AGC knee point. This corresponds to ap poximate optical power levels in the range of -20 dBm to -25 dBm. 8. Guaranteed by design and characterization. 9. Optical input >= -20 dBm. 10. Die are tested and guaranteed at 25 °C, however are ch aracterized to operate over the whole temperature range. 11. For a 30 db input signal change.
02009-DSH-001-D Mindspeed Technologies™ 12 Mindspeed Proprietary and Confidential
2.5 Bare Die Layout and X Y Coordinates
Table 2-5. Bare Die Layout Example daP X Y DNG7 03-0 03 DDNG TUO 703-0 51 D TUO 703-0 NOM7 03-0 51- V CC 703-0 03- KNIP5 2.99-7 93- ANIP8 .4217 93- V CC 7030 03- CGA7 030 51- D TUO 7030 DDNG TUO 7030 51 DNG7 030 03 Notes: Process technology: CMOS, Silicon Nitride passivation Die thickness: 300 µm Pad metallization: Aluminum Die size: 890 µm x 1020 µm Pad opening: 86 µmsq Octagonal pad: 70 µm across flat Pad Centers in µm referenced to center of device.
02009-DSH-001-D Mindspeed Technologies™ 13 Mindspeed Proprietary and Confidential © 2004, Mindspeed TechnologiesTM, Inc. All rights reserved. Information in this document is provided in connection with Mindspeed TechnologiesTM ("MindspeedTM") products. These materials are provided by Mindspeed as a service to its customers and may be used for informational pur- poses only. Except as provided in Mindspeed’s Terms and Conditions of Sale for such products or in any sepa- rate agreement related to this document, Mindspeed assumes no liability whatsoever. Mindspeed assumes no responsibility for errors or omissions in these materials. Mindspeed may make changes to specifications and prod- uct descriptions at any time, without notice. Mindspeed makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MINDSPEED PRODUCTS INCLUDING LIABILITY OR WAR- RANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY , OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLEC- TUAL PROPERTY RIGHT. MINDSPEED FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETE- NESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MINDSPEED SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSE- QUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. Mindspeed products are not intended for use in medical, lifesaving or life sustaining applications. Mindspeed cus- tomers using or selling Mindspeed products for use in such applications do so at their own risk and agree to fully indemnify Mindspeed for any damages resulting from such improper use or sale.
02009-DSH-001-D Mindspeed Technologies™ 14 Mindspeed Proprietary and Confidential www.mindspeed.com General Information: U.S. and Canada: (800) 854-8099 International: (949) 483-6996 Headquarters - Newport Beach 4000 MacArthur Blvd., East Tower Newport Beach, CA. 92660