IQE013N04LM6CG INFINEON | Alldatasheet

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Technical content

Features

  • Optimizedforsynchronousrectification
  • Verylowon-stateresistanceRDS(on)
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel,logiclevel
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.35 mΩ ID 205 A Qoss 45 nC Qg(0V..10V) 41 nC Type/OrderingCode Package Marking RelatedLinks IQE013N04LM6CG PG-TTFN-9-1 01304C6 -

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet TableofContents

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 205 145 170 120 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) Pulsed drain current3) ID,pulse - - 820 A TC=25°C Avalanche current, single pulse4) IAS - - 50 A TC=25°C Avalanche energy, single pulse EAS - - 255 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 107

2.5 W TC=25°C

TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.4 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 1.6 2.0 V VDS=VGS,ID=51µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 1.5 1.1 1.9 1.35 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG - 0.9 - Ω - Transconductance gfs 65 130 - S |VDS|>2|ID|RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 2900 3900 pF VGS=0V,VDS=20V,f=1MHz Output capacitance1) Coss - 930 1200 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance1) Crss - 27 40 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 7.1 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 3.6 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 21.0 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 44 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 7 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge at threshold Qg(th) - 4.6 - nC VDD=20V,ID=20A,VGS=0to10V Gate to drain charge1) Qgd - 5.0 8 nC VDD=20V,ID=20A,VGS=0to10V Switching charge Qsw - 8 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 41 55 nC VDD=20V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 2.6 - V VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 20 26 nC VDD=20V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 17 - nC VDS=0.1V,VGS=0to4.5V Output charge1) Qoss - 45 60 nC VDD=20V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 107 A TC=25°C Diode pulse current IS,pulse - - 820 A TC=25°C Diode forward voltage VSD - 0.77 1 V VGS=0V,IF=20A,Tj=25°C Reverse recovery time1) trr - 25 50 ns VR=20V,IF=20A,diF/dt=400A/µs Reverse recovery charge1) Qrr - 62 124 nC VR=20V,IF=20A,diF/dt=400A/µs 1) Defined by design. Not subject to production test

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 100 120 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 120 160 200 240 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 120 140 160 3.5 V 4 V 4.5 V 5 V 10 V 3 V 2.8 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 3 V 3.5 V 4 V 4.5 V 5 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 200 400 600 800 1000 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 175 °C 25 °C RDS(on)=f(VGS),ID=20A;parameter:Tj

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 RDS(on)=f(Tj),ID=20A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -80 -40 120 160 200 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 510 µA 51 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 100 101 102 103 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 32 V 20 V 8 V VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -80 -40 120 160 200 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet 5PackageOutlines 0.65 MILLIMETERSDIMENSION- 1.10Ab1cDE1e 0.320.520.20 1.501.70 MIN.MAX. 3.303.30e1 10 2mm03 ISSUE DATE08.11.2019 DOCUMENT NO.Z8B00192161 EUROPEAN PROJECTION REVISION 0.395L 0.350.55 - 0.05A1 Figure1OutlinePG-TTFN-9-1,dimensionsinmm

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet Pin1 MarkingThe drawing is in compliance with ISO 128-30, Projection Method 1 [ ]All dimensions are in units mm 1280.31.23.63.64 Figure2OutlineTape(PG-TTFN-9-1),dimensionsinmm

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet coppersolder maskstencil aperturesAll dimensions are in units mm 0.150.615 0.9751.675 0.222x 1.2350.3950.656x 1.6290.42x1.059 1.150.0552x 0.36x0.358x0.45 1.10.81.20.7 0.451.10.985 0.450.4751.35 0.150.3950.595 Pin 10.9750.656x Figure3OutlineBoardpad(PG-TTFN-9-1),dimensionsinmm

OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15Final Data Sheet RevisionHistory IQE013N04LM6CG Revision:2020-07-15,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-07-15 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.