UPB1005K Datasheet PDF & Specifications

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UPB1007K RENESAS

Document overview

Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
PDF pages: 29

Technical content

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10014EJ02V0DS (2nd edition) Date Published February 2002 CP(K) Printed in Japan  NEC Compound Semiconductor Devices 2001, 2002 BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µµµµPB1007K REFERENCE FREQUENCY 16.368 MHz, 2nd IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER The mark shows major revised points.

DESCRIPTION

The µPB1007K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated Pre-Amplifier + RF/IF down-converter + PLL frequency synthesizer on 1 chip. This IC is lower current than the µPB1005K and packaged in a 36-pin QFN package. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.

FEATURES

Double conversion : f REFin = 16.368 MHz, f1stIFin = 61.380 MHz, f2ndIFin = 4.092 MHz
Integrated RF block : Pre-Amplifier + RF/IF frequency down-converter + PLL frequency synthesizer
Needless to input counter data : fixed division internal prescaler
VCO side division : ÷200 (÷25, ÷8 serial prescaler)
Reference division : ÷2
Supply voltage : V CC = 2.7 to 3.3 V
Low current consumption : I CC = 25.0 mA TYP. @ VCC = 3.0 V
Gain adjustable externally : Gain control voltage pin (control voltage up vs. gain down)
On-chip pre-amplifier : G P = 15.5 dB TYP. @ f = 1.57542 GHz NF = 3.2 dB TYP. @ f = 1.57542 GHz
Power-save function : Power-save dark current I CC (PD) = 5 µA MAX.
High-density surface mountable : 36-pin plastic QFN

APPLICATIONS

Consumer use GPS receiver of reference frequency 16.368 MHz, 2nd IF frequency 4.092 MHz (for general use)

ORDERING INFORMATION

Part Number Package Supplying Form µPB1007K-E1 36-pin plastic QFN • 12 mm wide embossed taping

Pin 1 indicates pull-out direction of tape
Qty 2.5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPB1007K Caution Electro-static sensitive devices

Data Sheet PU10014EJ02V0DS2 µµµµPB1007K PRODUCT LINE-UP (T A = +25°°°°C, VCC = 3.0 V) Type Part Number Functions (Frequency unit: MHz) VCC (V) ICC (mA) CG (dB) Package Status µPB1007K Pre-amplifier + RF/IF down-converter + PLL synthesizer REF = 16.368 1stIF = 61.380/2ndIF = 4.092 2.7 to 3.3 25.0 100 to 120 36-pin plastic QFN New Device µPB1005GS 30-pin plastic SSOP Clock Frequency Specific 1 chip IC µPB1005K RF/IF down-converter + PLL synthesizer REF = 16.368 1stIF = 61.380/2ndIF = 4.092 2.7 to 3.3 45.0 76 to 96 36-pin plastic QFN Available Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. To know the associated products, please refer to their latest data sheets. SYSTEM APPLICATION EXAMPLE GPS receiver RF block diagram 1 600f0 RF-MIXout 60f01540f0 BPFBPF IF-MIXin IF-MIXout 4f0 BPF 2ndIFin1 VGC 2ndIFin2 2ndIFbypass 2ndIF-AmpIF-MIX 4.092 MHz 16f0 to DemdulatorBuffer to Demdulator REF 1/2PD 8f0 8f0 8f0 16f0 LO out 64f0 1/81/25 1stLO-OSC21stLO-OSC1 TCXO

16.368 MHz

1575.42 MHz

PB1007K is in
f0 = 1.023 MHz in the diagram µ Caution This diagram schematically shows only the µµµµPB1007K’s internal functions on the system. This diagram does not present the actual application circuits.

Data Sheet PU10014EJ02V0DS 3 µµµµPB1007K PIN CONNECTION AND INTERNAL BLOCK DIAGRAM Top View 12345678 9 IF-MIXout Pre-AMP in RF-MIXout IF-MIXin REF out1 REF in2 REF out2 LO out CP out Power Down2 Power Down1 GND (PLL Block) VCC (PLL Block) GND (IF-MIX) GND (Pre-AMP) VGC (IF-MIX) VCC (IF-MIX) VCC (RF-MIX) VCC (Vreg) GND (Vreg) GND (RF-MIX) Pre-AMP out 1stLO-OSC1 1stLO-OSC2 VCC (1stLO-OSC) VCC (PLL Block) REF in1 VCC (REF Block) VCC (2nd IF-AMP) GND (REF Block) GND (2nd IF-AMP) 2ndIFout 2ndIFbypass 2ndIFin2 2ndIFin1 RF-MIXin PD CP ÷25 26 25 24 23 22 21 20 19 Reg

Data Sheet PU10014EJ02V0DS4 µµµµPB1007K PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Function and Application Internal Equivalent Circuit

1 Pre-AMP out − voltage

Output pin of Pre-amplifier. Output biasing and matching required as it is a open collector output. 2V CC (Vreg) 2.7 to 3.3 − Supply voltage pin of voltage regulator. This pin should be externally equipped with bypass capacitor to minimize ground impedance. 3 GND(V reg)0 − Ground pin of voltage regulator. 35 Pre-AMP in − 0.79 Input pin of Pre-amplifier. LC matching circuit must be connected to this pin. 36 GND(Pre-AMP) 0 − Ground pin of Pre-amplifier. 363 Regulator 4R F - M I X in − 1.00 Input pin of RF mixer. 1 575.42 MHz band pass filter can be inserted between pin 1 and 4. 5 GND(RF-MIX) 0 − Ground pin of RF mixer. 33 RF-MIX out − 1.30 Output pin of RF mixer. 1st IF filter must be inserted between pin 31 and 33. 34 V CC (RF-MIX) 2.7 to 3.3 − Supply voltage pin of RF mixer. This pin should be externally equipped with bypass capacitor to minimize ground impedance. 1stLO- OSC 61 s t L O - O S C 1 − 1.80 71 s t L O - O S C 2 − 1.80 Pin 6 and 7 are each base pin of differential amplifier for 1st LO oscillator. These pins should be equipped with LC and varactor to oscillate on 1 636.80 MHz as VCO. 8V CC (1stLO-OSC) 2.7 to 3.3 − Supply voltage pin of differential amplifier for 1st LO oscillator circuit. RF-MIX or Prescaler input

Data Sheet PU10014EJ02V0DS 5 µµµµPB1007K Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Function and Application Internal Equivalent Circuit 9V CC (PLL Block) 2.7 to 3.3 − Supply voltage pin of PLL block. This pin should be externally equipped with bypass capacitor to minimize ground impedance.

10 CP out − Output in

difference. Output pin of charge-pump. This pin should be equipped with external RC in order to adjust dumping factor and cut-off frequency. This tuning voltage output must be connected to varactor diode of 1stLO-OSC. 11 GND(PLL Block) 0 − Ground pin of PLL block. PD CP 12 V CC (PLL Block) 2.7 to 3.3 − Supply voltage pin of PLL block. This pin should be externally equipped with bypass capacitor to minimize ground impedance. 13 LO out − 1.85 Monitor pin of 1/200 prescaler output. 14 REF out2 − 1.68 Monitor pin of 1/2 prescaler output.

15 Power Down1 0 or V CC − Stand-by mode control pin of Pre-

amplifier block, 1stLO-OSC block, charge pump prescaler block, LO output amplifier, RF mixer, IF mixer, 2ndIF amplifier. 1st LO- OSC IF-MIX PDPD ÷25 ÷8 Ref. Low OFF High ON

Data Sheet PU10014EJ02V0DS6 µµµµPB1007K Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Function and Application Internal Equivalent Circuit

16 Power Down2 0 or V CC − Stand-by mode control pin of

reference block. 17 REF out1 −− Output pin of reference frequency. The frequency from pin 19 can be taken out as 3 V P-P swing. 18 REF in2 − 2.45 Input pin of reference frequency. This pin should be grounded through capacitor. 19 REF in1 − 2.45 Input pin of reference frequency. This pin can use as an input pin of reference frequency buffer. This pin should be equipped with external 16.368 MHz oscillator (example: TCXO). 20 V CC (REF Block) 2.7 to 3.3 − Supply voltage pin of reference block. This pin should be externally equipped with bypass capacitor to minimize ground impedance. 21 GND(REF Block) 0 − Ground pin of reference block. Prescaler 22 2ndIF out − 1.80 Output pin of 2nd IF amplifier. This pin output 4.092 MHz. This pin should be equipped with external buffer amplifier to adjust level to next stage on user’s system. 23 V CC (2nd IF-AMP) 2.7 to 3.3 − Supply voltage pin of 2nd IF amplifier. This pin should be externally equipped with bypass capacitor to minimize ground impedance. 24 2ndIFbypass − 2.10 Bypass pin of 2nd IF amplifier. This pin should be grounded through capacitor. 25 2ndIF in2 − 2.10 Pin of 2nd IF amplifier input 2. This pin should be grounded through capacitor. 26 2ndIF in1 − 2.10 Pin of 2nd IF amplifier input 1. 2nd IF filter can be inserted between 26 and 28. 27 GND(2nd IF-AMP) 0 − Ground pin of 2nd IF amplifier. Low OFF High ON

Data Sheet PU10014EJ02V0DS 7 µµµµPB1007K Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Function and Application Internal Equivalent Circuit 28 IF-MIX out − 1.0 Output pin of IF mixer. IF mixer output signal goes through gain control amplifier before this emitter follower output port. 29 V CC (IF-MIX) 2.7 to 3.3 − Supply voltage pin of IF mixer. This pin should be externally equipped with bypass capacitor to minimize ground impedance. 30 V GC (IF-MIX) 0 to 3.3 − Gain control voltage pin of IF mixer output amplifier. This voltage performs forward control GC up → Gain down). 31 IF-MIX in − 1.97 Input pin of IF mixer. 32 GND(IF-MIX) 0 − Ground pin of IF mixer. 2ndLO Caution Ground pattern on the board must be formed as wide as possible to minimize ground impedance.

Data Sheet PU10014EJ02V0DS8 µµµµPB1007K ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage V CC TA = +25°C3 . 6 V Total Circuit Current I CCTotal TA = +25°C 100 mA Power Dissipation P D TA = +85°C Note 360 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V CC 2.7 3.0 3.3 V Operating Ambient Temperature T A −40 +25 +85 °C RF Input Frequency f RFin − 1 575.42 − MHz 1st LO Oscillating Frequency f 1stLOin − 1 636.80 − MHz 1st IF Input Frequency f 1stIFin − 61.380 − MHz 2nd LO Input Frequency f 2ndLOin − 65.472 − MHz 2nd IF Input Frequency f 2ndIFin − 4.092 − MHz Reference Input/Output Frequency fREFin fREFout − 16.368 − MHz LO Output Frequency f LOout − 8.184 − MHz

Data Sheet PU10014EJ02V0DS 9 µµµµPB1007K ELECTRICAL CHARACTERISTICS (T A = +25°°°°C, VCC = 3.0 V) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Total Circuit Current I CCTotal All block operating @ PLL lock 19.0 25.0 35.0 mA Power-save Dark Current I CC (PD) Pin 15 = Pin 16 = 0 V −− 5 µA Reference Block Circuit Current ICC REF Pin 15 = 0 V, Pin 16 = 3 V − 34 m A Pre-amplifier Block (fRFin = 1 575.42 MHz, ZS = ZL = 50 Ω ) Circuit Current 1 I CC 1 No Signals 1.65 2.50 3.50 mA Power Gain G P Input/Output matching, PRFin = −40 dBm 12.5 15.5 18.5 dB Noise Figure NF Input/Output matching − 3.2 4.0 dB RF Down-converter Block (fRFin = 1 575.42 MHz, f1stLOin = 1 636.80 MHz, PLOin = −10 dBm, ZS = ZL = 50 Ω ) Circuit Current 2 I CC 2 No Signals 5.2 7.0 9.9 mA RF Conversion Gain CG RF PRFin = −40 dBm 15.5 18.5 21.5 dB RF-SSB Noise Figure NF RF − 10.5 13.5 dB RF Saturated Output Power P O(sat)RF PRFin = −10 dBm −4 −1 − dBm IF Down-converter Block (f1stIFin = 61.38 MHz, f2ndLOin = 65.472 MHz, ZS = 50 Ω , ZL = 2 kΩ ) Circuit Current 3 I CC 3 No Signals 2.7 3.5 5.0 mA IF Conversion Voltage Gain CG (GV)IF at Maximum Gain, P1stIFin = −50 dBm 40 43 46 dB IF-SSB Noise Figure NF IF at Maximum Gain − 11.5 14.5 dB 2nd IF Saturated Output Power PO(sat)2ndIF at Maximum Gain, P1stIFin = −20 dBm −9.0 −6.0 − dBm Gain Control Voltage V GC Voltage at Maximum Gain CGIF −− 1.0 V Gain Control Range D GC P1stIFin = −50 dBm 20 −− dB 2nd IF Amplifier (f2ndIFin = 4.092 MHz, ZS = 50 Ω , ZL = 2 kΩ ) Circuit Current 4 I CC 4 No Signals 0.8 1.0 1.6 mA Voltage Gain G V P2ndIFin = −60 dBm 40 43 46 dB 2nd IF Saturated Output Power PO(sat)2ndIF P2ndIFin = −30 dBm −14.0 −11.0 − dBm PLL Synthesizer Block Circuit Current 5 I CC 5 PLL All Block Operating 8.7 11.0 14.4 mA Loop Filter Output (High) V O H2 . 8 −− V Loop Filter Output (Low) V O L −− 0.4 V Reference Minimum Input Level V REFin ZL = 100 kΩ //0.6 pF Impedance of measurement equipment 200 −− mV P-P Reference Output Swing V REFout ZL = 100 kΩ //0.6 pF Impedance of measurement equipment 2.9 3.0 − VP-P

Data Sheet PU10014EJ02V0DS10 µµµµPB1007K STANDARD CHARACTERISTICS (T A = +25°°°°C, VCC = 3.0 V) Parameter Symbol Test Conditions Reference Unit Pre-amplifier Block (fRFin = 1 575.42 MHz, ZS = ZL = 50 Ω ) Input 1dB Compression Level P in(1dB) Input/Output matching −20 dBm RF Down-converter Block (P1stLOin = −10 dBm, ZS = ZL = 50 Ω ) LO Leakage to IF Pin LO if f1stLOin = 1 636.80 MHz −37 dBm LO Leakage to RF Pin LO rf f1stLOin = 1 636.80 MHz −36 dBm Input 3rd Order Intercept Point IIP3(RF) fRFin1 = 1 600 MHz, fRFin2 = 1 605 MHz, f1stLOin = 1 660 MHz −15 dBm IF Down-converter Block (1st LO oscillating, ZS = 50 Ω , ZL = 2 kΩ ) LO Leakage to 1st IF Pin LO 1stif f2ndLOin = 65.472 MHz −90 dBm LO Leakage to 2nd IF Pin LO 2ndif f2ndLOin = 65.472 MHz −63 dBm Input 3rd Order Intercept Point IIP3(IF) f1stIFin1 = 61.38 MHz, f1stIFin2 = 61.48 MHz, f2ndLOin = 65.472 MHz −27.5 dBm PLL Synthesizer Block Phase Comparing Frequency f PD PLL loop 8.184 MHz VCO Block Phase Noise C/N PLL Loop, Δ1 kHz of VCO wave 83 dBc/Hz

Data Sheet PU10014EJ02V0DS 11 µµµµPB1007K TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C, VCC = 3.0 V) 0 1234 Total Circuit Current ICCTotal (mA) Supply Voltage VCC (V) TOTAL CIRCUIT CURRENT vs. SUPPLY VOLTAGE PLL lock TA = +85˚C TA = +25˚C TA = –40˚C 0 1234 Circuit Current ICC (mA) Supply Voltage VCC (V) CIRCUIT CURRENT vs. SUPPLY VOLTAGE No signal +10 –10 –20 –30 –40 –50 Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER fRFin = 1 575.42 MHz VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V +10 –10 –20 –30 –40 –50 Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER VCC = 3 V fRFin = 1 575.42 MHz TA = +85˚C TA = +25˚C TA = –40˚C

Data Sheet PU10014EJ02V0DS12 µµµµPB1007K 1.5 0.5 0 1234 Circuit Current ICC (mA) Supply Voltage VCC (V) CIRCUIT CURRENT vs. SUPPLY VOLTAGE No signal +10 –10 –20 –30 –40 –50 –40–60 –20 0 +20 1stIF Output Power P1stIFout (dBm) RF Input Power PRFin (dBm) 1stIF OUTPUT POWER vs. RF INPUT POWER fRFin = 1 575.42 MHz fLOin = 1 636.8 MHz PLOin = –10 dBm f1stIFout = 61.38 MHz VCC = 2.7 V VCC = 3.0 V VCC = 3.3 V –10 –20 –30 –40 –50 –60 1stIF Output Power P1stIFout (dBm) 1stLO Input Power P1stLOin (dBm) vs. 1stLO INPUT POWER 1stIF OUTPUT POWER fRFin = 1 575.42 MHz PRFin = –40 dBm f1stLOin = 1 636.8 MHz f1stIFout = 61.38 MHz VCC = 3.0 V VCC = 2.7 V VCC = 3.3 V 0.1 0.2 0.3 0.5 1 2 RF Input Frequency fRFin (GHz) vs. RF INPUT FREQUENCY RF CONVERSION GAIN RF Conversion Gain CGRF (dB) PRFin = –40 dBm P1stLOin = –10 dBm f1stIFout = 61.38 MHz fLO = fRFin + f1stIFout VCC = 3.3 V VCC = 2.7 V VCC = 3.0 V VCC = 3 V fRFin = 1 575.42 MHz fLOin = 1 636.8 MHz PLOin = –10 dBm f1stIFout = 61.38 MHz TA = –40˚C TA = +25˚C TA = +85˚C +10 –10 –20 –30 –40 –50 –40–60 –20 0 +20 1stIF Output Power P1stIFout (dBm) RF Input Power PRFin (dBm) 1stIF OUTPUT POWER vs. RF INPUT POWER

Data Sheet PU10014EJ02V0DS 13 µµµµPB1007K fRFin = 1 575.42 MHz PRFin = –40 dBm P1stLOin = –10 dBm fLOin = fRFin + f1stIFout Upper local VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V 10 30 50 100 300 1stIF Output Frequency f1stIFout (MHz) 1stIF OUTPUT FREQUENCY RF CONVERSION GAIN vs. RF Conversion Gain CGRF (dB) VCC = 3 V fRFin1 = 1 600 MHz fRFin2 = 1 605 MHz f1stLOin = 1 660 MHz P1stLOin = –10 dBm +20 –20 –40 –60 –80 RF Input Power of Each Tone PRFin (each) (dBm) vs. RF INPUT POWER OF EACH TONE 1stIF OUTPUT POWER OF EACH TONE 1stIF Output Power of Each Tone P1stIFout (each) (dBm) 0 1234 Circuit Current ICC (mA) Supply Voltage VCC (V) CIRCUIT CURRENT vs. SUPPLY VOLTAGE No signal f1stIFin = 61.38 MHz f2ndLOin = 65.472 MHz P2ndLOin = –10 dBm f2ndIFout = 4.092 MHz VGC = GND VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V –10 –20 –30 –40 –50 2ndIF Output Power P2ndIFout (dBm) 1stIF Input Power P1stIFin (dBm) 2ndIF OUTPUT POWER vs. 1stIF INPUT POWER VCC = 3 V f1stIFin = 61.38 MHz f2ndLOin = 65.472 MHz P2ndLOin = –10 dBm f2ndIFout = 4.092 MHz VGC = GND TA = +25˚C TA = –40˚C TA = +85˚C –10 –20 –30 –40 –50 2ndIF Output Power P2ndIFout (dBm) 1stIF Input Power P1stIFin (dBm) 2ndIF OUTPUT POWER vs. 1stIF INPUT POWER

Data Sheet PU10014EJ02V0DS14 µµµµPB1007K P1stIFin = –50 dBm P2ndLOin = –10 dBm f2ndIFout = 4.092 MHz VGC = GND VCC = 3.3 V VCC = 2.7 V VCC = 3.0 V 10 30 50 70 100 1stIF Input Frequency f1stIFin (MHz) vs.1stIF INPUT FREQUENCY IF CONVERSION VOLTAGE GAIN IF Conversion Voltage Gain CG(GV)IF (dB) f1stIFin = 61.38 MHz P1stIFin = –50 dBm P2ndLOin = –10 dBm f2ndIFout = f1stIFin – f2ndLOin VGC = GND VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V 1 3 57 1 0 2ndIF Output Frequency f2ndIFout (MHz) vs. 2ndIF OUTPUT FREQUENCY IF CONVERSION VOLTAGE GAIN IF Conversion Voltage Gain CG(GV)IF (dB) f1stIFin = 61.38 MHz P1stIFin = –50 dBm f2ndLOin = 65.472 MHz f2ndIFout = 4.092 MHz VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V –10 0 0.5 1 1.5 2 2.5 3 Gain Control Voltage VGC (V) vs. GAIN CONTROL VOLTAGE IF CONVERSION VOLTAGE GAIN IF Conversion Voltage Gain CG(GV)IF (dB) VCC = 3 V P1stIFin = –50 dBm P2ndLOin = –10 dBm f2ndIFout = 4.092 MHz VGC = GND TA = –40˚C TA = +25˚C TA = +85˚C 10 30 50 70 100 1stIF Input Frequency f1stIFin (MHz) vs.1stIF INPUT FREQUENCY IF CONVERSION VOLTAGE GAIN IF Conversion Voltage Gain CG(GV)IF (dB) VCC = 3 V f1stIFin = 61.38 MHz P1stIFin = –50 dBm P2ndLOin = –10 dBm f2ndIFout = f1stIFin – f2ndLOin VGC = GND TA = –40˚C TA = +25˚C TA = +85˚C 1 3 57 1 0 2ndIF Output Frequency f2ndIFout (MHz) vs. 2ndIF OUTPUT FREQUENCY IF CONVERSION VOLTAGE GAIN IF Conversion Voltage Gain CG(GV)IF (dB) VCC = 3 V f1stIFin = 61.38 MHz P1stIFin = –50 dBm f2ndLOin = 65.472 MHz f2ndIFout =4.092 MHz TA = –40˚C TA = +85˚CTA = +25˚C –10 0 0.5 1 1.5 2 2.5 3 Gain Control Voltage VGC (V) vs. GAIN CONTROL VOLTAGE IF CONVERSION VOLTAGE GAIN IF Conversion Voltage Gain CG(GV)IF (dB)

Data Sheet PU10014EJ02V0DS 15 µµµµPB1007K VCC = 3 V f1stIFin1 = 61.38 MHz f1stIFin2 = 61.48 MHz f2ndLOin = 65.472 MHz P2ndLOin = –10 dBm VGC = GND –20 –10 –40 –30 –60 –50 –80 –90 –70 –100 1stIF Input Power of Each Tone P1stIFin (each) (dBm) vs. 1stIF INPUT POWER OF EACH TONE 2ndIF OUTPUT POWER OF EACH TONE 2ndIF Output Power of Each Tone P2ndIFout (each) (dBm) 0 1234 Circuit Current ICC (mA) Supply Voltage VCC (V) CIRCUIT CURRENT vs. SUPPLY VOLTAGE No signal f2ndIFin = 4.092 MHz R L = 2 kΩ VCC = 3 V f2ndIFin = 4.092 MHz R L = 2 kΩ VCC = 2.7 V VCC = 3.0 V VCC = 3.3 V –10 –20 –30 –40 –50 2ndIF Output Power P2ndIFout (dBm) 2ndIF Input Power P2ndIFin (dBm) 2ndIF OUTPUT POWER vs. 2ndIF INPUT POWER TA = +85˚C TA = +25˚C TA = –40˚C –10 –20 –30 –40 –50 2ndIF Output Power P2ndIFout (dBm) 2ndIF Input Power P2ndIFin (dBm) 2ndIF OUTPUT POWER vs. 2ndIF INPUT POWER

Data Sheet PU10014EJ02V0DS16 µµµµPB1007K P2ndIFin = –60 dBm R L = 2 kΩ VCC = 3.3 V VCC = 2.7 VVCC = 3.0 V 0.1 1 10 100 2ndIF Input Frequency f2ndIFin (MHz) 2ndIF INPUT FREQUENCY VOLTAGE GAIN vs. Voltage Gain GV (dB) VCC = 3 V P2ndIFin = –60 dBm R L = 2 kΩ TA = –40˚C TA = +85˚C TA = +25˚C 0.1 1 10 100 2ndIF Input Frequency f2ndIFin (MHz) 2ndIF INPUT FREQUENCY VOLTAGE GAIN vs. Voltage Gain GV (dB) 0 1234 Circuit Current ICC (mA) Supply Voltage VCC (V) CIRCUIT CURRENT vs. SUPPLY VOLTAGE No signal PREFin = 0 dBm VCC = 3.3 V VCC = 2.7 VVCC = 3.0 V 4.0 2.0 3.5 2.5 1.5 0.5 1.0 3.0 0.0 1 10 100 Reference Input Frequency fREFin (MHz) REFERENCE INPUT FREQUENCY REFERENCE OUTPUT SWING vs. Reference Output Swing VREFout (VP-P) VCC = 3 V PREFin = 0 dBm TA = –40˚C TA = +25˚C TA = +85˚C 4.0 2.0 3.5 2.5 1.5 0.5 1.0 3.0 0.0 1 10 100 Reference Input Frequency fREFin (MHz) REFERENCE INPUT FREQUENCY REFERENCE OUTPUT SWING vs. Reference Output Swing VREFout (VP-P)

Data Sheet PU10014EJ02V0DS 17 µµµµPB1007K fREFin = 16.368 MHz R L = 100 kΩ //0.6 pF VCC = 3.3 V VCC = 2.7 V VCC = 3.0 V 4.0 2.0 3.5 2.5 1.5 0.5 1.0 3.0 0.0 Reference Input Power PREFin (dBm) REFERENCE INPUT POWER REFERENCE OUTPUT SWING vs. Reference Output Swing VREFout (VP-P) VCC = 3 V fREFin = 16.368 MHz R L = 100 kΩ //0.6 pF TA = –40˚C TA = +85˚C TA = +25˚C 4.0 2.0 3.5 2.5 1.5 0.5 1.0 3.0 0.0 Reference Input Power PREFin (dBm) REFERENCE INPUT POWER REFERENCE OUTPUT SWING vs. Reference Output Swing VREFout (VP-P) Remark The graphs indicate nominal characteristics.

Data Sheet PU10014EJ02V0DS18 µµµµPB1007K MEASUREMENT CIRCUIT MEASUREMENT CIRCUIT 1 (Pre-Amplifier Block) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 1.95 kΩ 50 Ω Terminater 10 nF 50 Ω Signal Generater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 10 nF 10 nF 10 nF 10 nF 50 Ω Signal Generater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 Fµ 2 nF 15 nF3.9 nH 1SV285 100 pF pF pF 10 nF 100 pF 1 nF 1 pF 50 Ω Terminater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Spectrum Analyzer 4.7 kΩ 4.7 kΩ 750 Ω 0.1 Fµ MEASUREMENT CIRCUIT 2 (Pre-Amplifier Block: NF) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Signal Generater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 Fµ 4.7 nH 1.95 kΩ 50 Ω Terminater 10 nF 10 nF 50 pF10 nF 10 pF 10 nF 10 nF 10 nF 10 nF 1 nF1 nF 2 nF 15 nF3.9 nH 1SV285 100 pF pF pF 10 nF 100 pF 1 nF 1 pF 50 Ω Terminater 1 pF 2.7 nH 10 nF10 pF 10 nF 4.7 kΩ 4.7 kΩ 750 Ω 0.1 Fµ NF Meter Noise Source

Data Sheet PU10014EJ02V0DS 19 µµµµPB1007K MEASUREMENT CIRCUIT 3 (RF-MIX Block) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Terminater 50 Ω Terminater 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 nF 50 Ω Terminater 1 nF100 pF 10 nF 100 pF 1 nF 50 Ω Signal Generater 50 Ω Signal Generater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 1.95 kΩ 50 Ω Spectrum Analyzer 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater MEASUREMENT CIRCUIT 4 (RF-MIX Block: NF) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Terminater 50 Ω Terminater 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 nF 50 Ω Terminater 1 nF100 pF 10 nF 100 pF 1 nF 50 Ω Signal Generater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 1.95 kΩ 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater NF Meter Noise Source

Data Sheet PU10014EJ02V0DS20 µµµµPB1007K MEASUREMENT CIRCUIT 5 (IF Down-Converter Block) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Terminater 50 Ω Terminater 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 nF 50 Ω Terminater 1 nF100 pF 10 nF 100 pF 1 nF 50 Ω Terminater 50 Ω Signal Generater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 1.95 kΩ 50 Ω Terminater 50 Ω Signal Generater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Spectrum Analyzer MEASUREMENT CIRCUIT 6 (IF Down-Converter Block: NF) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Terminater 50 Ω Terminater 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 nF 50 Ω Terminater 1 nF100 pF 10 nF 100 pF 1 nF 50 Ω Terminater 50 Ω Signal Generater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 1.95 kΩ 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF Noise Source NF Meter

Data Sheet PU10014EJ02V0DS 21 µµµµPB1007K MEASUREMENT CIRCUIT 7 (IF Amplifier Block) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Signal Generater 50 Ω Spectrum Analyzer 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 nF 50 Ω Terminater 1 nF100 pF 10 nF 100 pF 1 nF 50 Ω Terminater 50 Ω Terminater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 1.95 kΩ 50 Ω Terminater 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater MEASUREMENT CIRCUIT 8 (IF Amplifier Block: NF) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 nF 50 Ω Terminater 1 nF100 pF 10 nF 100 pF 1 nF 50 Ω 50 Ω TerminaterTerminater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 1.95 kΩ 50 Ω Terminater 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ Noise Source NF Meter

Data Sheet PU10014EJ02V0DS22 µµµµPB1007K MEASUREMENT CIRCUIT 9 (IF Amplifier Block: Output Swing) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 nF 50 Ω Terminater 1 nF100 pF 10 nF 100 pF 1 nF 50 Ω Terminater 50 Ω Terminater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 1.95 kΩ 50 Ω Terminater 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Signal Generater 50 Ω Terminater Oscilloscope MEASUREMENT CIRCUIT 10 (1/2 Prescaler) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Singal Generater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Terminater 50 Ω Terminater 1 nF100 pF 10 nF 100 pF 1 nF 50 Ω 50 Ω Terminater Terminater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 1.95 kΩ 50 Ω Terminater 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 nF 50 Ω Spectrum Analyzer

Data Sheet PU10014EJ02V0DS 23 µµµµPB1007K MEASUREMENT CIRCUIT 11 (1/200 Prescaler) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Terminater 50 Ω Terminater 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ 50 Ω Terminater 1 Fµ 50 Ω Spectrum Analyzer 1.95 kΩ 50 Ω Terminater 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 100 pF 10 nF 100 pF 1 nF 50 Ω Terminater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ nF nF 50 Ω Signal Generater 50 Ω Terminater Transformer MEASUREMENT CIRCUIT 12 (REF Output) 12345678 9 27 26 25 24 23 22 21 20 19 PD CP Reg ÷25 10 nF 10 nF 10 nF 10 nF 50 Ω Signal Generater 1.95 kΩ 0.1 Fµ 0.1 Fµ 0.1 Fµ 50 Ω Terminater 50 Ω Terminater 0.1 Fµ 0.1 Fµ 0.1 Fµ 1 Fµ 1 Fµ Oscilloscope 1 Fµ 50 Ω Terminater 1.95 kΩ 50 Ω Terminater 50 Ω Terminater 10 nF 50 Ω Terminater 1 nF1 nF 10 nF 50 pF10 nF 10 pF 4.7 nH 10 nF 10 nF 10 nF 10 nF 50 Ω Terminater 100 pF 10 nF 100 pF 1 nF 50 Ω Terminater 1 pF 2.7 nH 10 nF10 pF 10 nF 50 Ω Terminater 0.1 Fµ nF nF 50 Ω Terminater 50 Ω Terminater

Data Sheet PU10014EJ02V0DS24 µµµµPB1007K PACKAGE DIMENSIONS 36-PIN PLASTIC QFN (UNIT: mm) 6.2±0.2 6.0±0.2 0.22±0.05 0.55±0.2 0.5 (Bottom View) 6.2±0.2 6.0±0.2 1.0MAX. 0.14+0.10 –0.05 6.2±0.2 6.0±0.2 6.2±0.2 6.0±0.2

36 Pin

1 Pin

Data Sheet PU10014EJ02V0DS 25 µµµµPB1007K NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent abnormal oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor (example: 1 000 pF) to the V CC pin. (5) High-frequency signal I/O pins must be coupled with the external circuit using a coupling capacitor. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) : 215 °C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating).

Data Sheet PU10014EJ02V0DS26 µµµµPB1007K M8E 00. 4 - 0110 The information in this document is current as of February, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).

NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0110 NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com Business issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918 Technical issue µµµµPB1007K

Overview

UPB1005K is listed in the IC category. Available datasheets include documents from NEC, Renesas Technology Corp. DigiCamel provides a local PDF and searchable HTML technical text for online reference.

Summary

BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT 2002

Description