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Power management (dual transistors) EMF21 / UMF21N 2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package. zzApplication Power management circuit zz zzFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. zzStructure Silicon epitaxial planar transistor zzEquivalent circuits R 1 R 2 DTr2 Tr1 (1) (2)(3) (4) (5) (6) R 1=10kΩ R 2=10kΩ zzEx ternal dimensions (Units : mm) ROHM : EMT6 EMF21 ROHM : UMT6 EIAJ : SC-88 UMF21N Abbreviated symbol :F21 Abbreviated symbol : F210.22 1.2 1.6 (1) (2)(5) (3) (6) (4) 0.13 0.5 0.50.5 1.0 1.6 Each lead has same dimensions 0 to 0.1 (6) 2.0 1.30.9 0.15 0.7 0.1Min. 2.1 0.65 0.2 1.25 (1) 0.65 (4) (3) (2) (5) Each lead has same dimensions zz zzPackage, marking, and packaging specifications Type UMF21N UMT6 F21 TR 3000 Package Marking Code Basic ordering unit(pieces) EMF21 EMT6 F21 T2R 8000

zzzzAbsolute maximum ratings (Ta=25°C) Tr1 Parameter ∗1 Single pulse PW =1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −15 −12 −500 150(TOTAL) 150 −55~+150 −1.0 ∗1 Unit V V V mA A mW Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature DTr2 Parameter ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. Symbol VCC VIN IC IO PC Tj Tstg Limits −10~+40 100 150(TOTAL) 150 −55~+150 Unit V V mA mA mW Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature zzzzElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions VCB =−10V, IE=0mA, f=1MHz Transition frequency fT − 260 − MHz VCE =−2V, IE=10mA, f=100MHz BV CEO −12 −− V IC =−1mACollector-emitter breakdown voltage BV CBO −15 −− V IC =−10µACollector-base breakdown voltage BV EBO −6 −− V IE=−10µAEmitter-base breakdown voltage ICBO −− −100 nA V CB =−15VCollector cut-off current IEBO −− −100 nA V EB =−6VEmitter cut-off current VCE(sat) −− 100 −250 mV IC =−200mA, IB=−10mACollector-emitter saturation voltage hFE 270 − 680 − VCE =−2V, IC =−10mADC current gain Cob − 6.5 − pFCollector output capacitance DTr2 Parameter Symbol VI(off) VI(on) VO(on) II IO(off) R 1 G I R 2/R1 fT Min. 0.8 0.1 250 0.5 0.3 0.88 0.5 1.2 V V CC =5V, IO =100µA VO =0.3V, IO =10mA IO /II=10mA/0.5mA VI=5V VCC =50V, VI=0V VO =5V, IO =5mA VCE =10V, IE=−5mA, f=100MHz ∗ V mA µA kΩ MHz Typ. Max. Unit Conditions Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency ∗ Transition frequency of the device

zzEl ectrical characteristic curves Tr1 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : I C (mA) VCE =2V Pulsed Ta=125°CTa=25°CTa= −40°C 1 10 100 1000 COLLECTOR CURRENT : I C (mA) Fig.2 DC current gain vs. collector current DC CURRENT GAIN : hFE 1000 100 Ta=125°C Ta=−40°C Ta=25°C VCE =2V Pulsed 1 10 100 1000 COLLECTOR CURRENT : I C (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : V CE(sat) (mV) 1000 100 Ta=25°C Pulsed IC /IB=50 IC /IB=20 IC /IB=10 1 10 100 1000 COLLECTOR CURRENT : I C (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) 1000 100 Ta=25°C Ta=−40°C Ta=125°C IC /IB=20 Pulsed 1 10 100 1000 COLLECTOR CURRENT : I C (mA) Fig.5 Base-emitter saturation voltage vs. collector current BASER SATURATION VOLTAGE : V BE (sat) (mV) 100 10000 1000 Ta=25°C Ta=−40°C Ta=125°C IC /IB=20 Pulsed 1 10 100 1000 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : f T (MHz) 1000 100 VCE =2V Ta=25°C Pulsed 1 10 1000.1 100 1000 Ta=25°C f=1MHz IE=0A COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR TO BASE VOLTAGE : V CB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Cib Cob

INPUT VOLTAGE : VI(on) (V) OUTPUT CURRENT : IO (A) 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 100 500m 200m 100m VO =0.3V Ta=−40°C 25°C 100°C Fig.1 Input voltage vs. output current (ON characteristics) INPUT VOLTAGE : V(off) (V) OUTPUT CURRENT : Io (A) 0 3.0 10m 200µ 500µ 100µ 20µ 50µ 10µ VCC =5V Ta=100°C 25°C −40°C Fig.2 Output current vs. input voltage (OFF characteristics) OUTPUT CURRENT : IO (A) DC CURRENT GAIN : GI 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m 500 200 100 VO =5V Ta=100°C 25°C −40°C Fig.3 DC current gain vs. output current OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : V O(on) (V) 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m lO /lI=20 Ta=100°C 25°C −40°C Fig.4 Output voltage vs. output current