U290

U290 VISHAY

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Document Number: 70235 S-41139—Rev. A, 07-Jun-04 www.vishay.com N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (/C0087) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES BENEFITS APPLICATIONS /C0068Low On-Resistance: U290 < 3 /C0087 /C0068Fast Switching—t ON: 14 ns /C0068High Off-Isolation /C0068Low Capacitance: 20 pF /C0068Low Insertion Loss /C0068Low Error Voltage /C0068High-Speed Analog Circuit Performance /C0068Negligible “Off-Error,” Excellent Accuracy /C0068Good Frequency Response /C0068Eliminates Additional Buffering /C0068Analog Switches /C0068Choppers /C0068Sample-and-Hold /C0068Normally “On” Switches /C0068Current Limiters

DESCRIPTION

The U290/U291 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. This series features the lowest on-resistance of any JFET in the industry today. TheTO-206AC (TO-52) hermetically sealed case makes this series suitable for military applications. For similar products in TO-226A (TO-92) packaging, see the J105/106/107 data sheet. Top View U290 U291 G and Case TO-206AC (TO-52) D S Ordering Information: U290—E3 U291—E3 ABSOLUTE MAXIMUM RATINGS Notes a. Derate 4 mW/ /C0095C above 25/C0095C

www.vishay.com Document Number: 70235 S-41139—Rev. A, 07-Jun-04 SPECIFICATIONS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits U290 U291 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = −1 /C0109A , VDS = 0 V −35 −30 −30 VGate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 3 nA −4.0 −10 −1.5 −4.5 V Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 500 200 mA Gate Reverse Current IGSS VGS = −15 V, VDS = 0 V −0.02 −1 −1 nA Gate Reverse Current IGSS TA = 125/C0095C −0.01 −1 −1 /C0109A Gate Operating Currentb IG VDG = 10 V, ID = 25 mA −0.01 nA Drain Cutoff Current ID( ff) VDS = 5 V, VGS = −10 V 0.01 1 1 nA Drain Cutoff Current ID(off) TA = 125/C0095C −0.005 1 1 /C0109A Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 3 7 /C0087 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Dynamic Common-Source Forward Transconductanceb gfs VDS = 10 V ID = 25 mA f = 1 kHz mSCommon-Source Output Conductanceb gos VDS = 10 V, ID = 25 mA, f = 1 kHz 5 mS Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 1 mA, f = 1 kHz 3 7 /C0087 Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 120 160 160 pFCommon-Source Reverse Transfer Capacitance Crss VDS = 0 V, VGS = −15 V, f = 1 MHz 20 30 30 pF Equivalent Input Noise Voltage en VDG = 10 V, ID = 25 mA, f = 1 kHz 3 nV⁄√Hz Switching Turn On Time td(on) 6 15 15 Turn-On Time tr VDD = 1.5 V, VGS(H) = 0 V 8 20 20 ns Turn-Off Time td(off) VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram 5 15 15 ns Turn-Off Time tf 9 20 20 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NVA b. Pulse test: PW /C0118300 /C0109s duty cycle /C01183%. TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 0 −6 −8 −10−2 10 100 1000 2 .0 1.6 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current VGS(off) − Gate-Source Cutoff Voltage (V) I D − Drain Current (mA) rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 10 V, VGS = 0 V IDSSrDS TA = 25/C0095C VGS(off) = −3 V −5 V −8 V 6 1.2 0.8 0.4 rDS(on) − Drain-Source On-Resistance ( Ω ) rDS(on) − Drain-Source On-Resistance ( Ω ) IDSS − Saturation Drain Current (mA)

Document Number: 70235 S-41139—Rev. A, 07-Jun-04 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) −55 25 125 −15 85 500 6821 0 400 200 100 0 −8−4−2 −10 03 0 4 0 10 50 Turn-On Switching Turn-Off Switching On-Resistance vs. Temperature Output Characteristics TA − Temperature (/C0095C) VDS − Drain-Source Voltage (V) VGS(off) − Gate-Source Cutoff Voltage (V) I D − Drain Current (mA) ID = 10 mA rDS changes /C0088 0.7%//C0095C tr approximately independent of ID VDD = 1.5 V, RG = 50 /C0087 VGS(L) = −10 V td(on) @ ID = 10 mA td(off) VGS(off) = −8 V VGS(off) = −3 V td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = −10 V −35 5 45 65 105 300 VGS(off) = −5 V tr VGS(off) = −3 V −5 V −8 V td(on) @ ID = 30 mA VGS = 0 V −1.0 V −0.5 V −1.5 V −2.0 V −2.5 V −3.0 V tf Switching Time (ns) Switching Time (ns) ID − Drain Current (mA) rDS(on) − Drain-Source On-Resistance ( Ω ) 200 100 1 10 100 150 120 Capacitance vs. Gate-Source Voltage Transconductance vs. Drain Current VGS − Gate-Source Voltage (V) I D − Drain Current (mA) VDS = 0 V f = 1 MHz Ciss Crss VDS = 10 V f = 1 kHz TA = −55/C0095C 125/C0095C 25/C0095C VGS(off) = −5 V C (pF) gfs − Forward Transconductance (mS)

VGS(H) VGS(L) U290/291 Vishay Siliconix www.vishay.com Document Number: 70235 S-41139—Rev. A, 07-Jun-04 TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 0.1 1 10 100 10 100 1 k 100 k 10 k 300 0 −6 260 180 140 100 −8 −10−4−2 01 2 1 6 842 0 100 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage Gate Leakage Current Output Conductance vs. Drain Current Noise Voltage vs. Frequency ID − Drain Current (mA) f − Frequency (Hz) VGS(off) − Gate-Source Cutoff Voltage (V) V DG − Drain-Gate Voltage (V) VDG = 10 V ID = 10 mA gfs and gos @ VDS = 10 V VGS = 0 V, f = 1 kHz gfs gos IGSS @ 125/C0095C IGSS @ 25/C0095C TA = 125/C0095C TA = 25/C0095C 100 mA 100 mA 25 mA 1 pA 100 pA 10 pA 100 nA 1 nA 10 nA TA = −55/C0095C 125/C0095C 220 18 25 mA VDS = 10 V f = 1 kHz VGS(off) = −5 V 25/C0095C nVen ⁄ Hz√ )(− Noise Voltage gos − Output Conductance (mS)gos − Output Conductance (mS) IG − Gate Leakage gos − Output Conductance (mS)gfs − Forward Transconductance (mS) SWITCHING TIME TEST CIRCUIT U290 U291 VGS(L) −12 V −7 V RL* 50 /C0087 50 /C0087 ID(on) 28 mA 27 mA * Non-Inductive Input Pulse Sampling Scope Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Rise Time 0.4 ns Input Resistance 10 M/C0087 Input Capacitance 1.5 pF

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.