TS750 ETC1
Document overview
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Technical content
www.SiliconStandard.com 1 of 2 8/26/2004 Rev.1.01 Plastic material used carries Underwriters Laboratory Classification 94V-0 Cases: Molded plastic body Lead: Plated axial leads, matte-tin plating Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.07 ounce, 2.1 grams P600 Dimensions in inches and (millimeters) 6A Silicon Rectifiers Voltage range 50-800 Volts Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave,60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Parameter Symbol TS750 TS751 TS752 TS754 TS756 TS758 Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 V Maximum Non-repetitive Peak Reverse Voltage VBR 60 120 240 480 720 1200 V Maximum Average Forward Rectified Current at TA = 60°C, P.C.B. Mounting (Fig. 1) TL= 60°C, 0.125”(3.18mm) Lead Length (Fig. 2) I(AV) 6.0 22.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 400 A VF 0.95 Maximum Instantaneous Forward Voltage @ 6.0A @ 100A 1 . 2 5 1 . 3 0 V Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=100°C IR 5.0 1000 uA uA Typical Junction Capacitance ( Note 1 ) Cj 150 pF Typical Thermal Resistance (Note 2) RθJA RθJL 20.0 4.0 °C/W Operating Junction Temperature Range TJ -50 to +150 °C Storage Temperature Range TSTG -50 to +150 °C Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts 2. Mount on copper pad, size 16mm x 16mm on P.C.B. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
FEATURES
Pb-free lead finish (second-level interconnect). TS750-TS758 High forward current capability Diffused junction High surge current capability High temperature soldering guaranteed: 260°C/10 seconds, 0.375”(9.5mm) lead length, 5lbs.(2.3kg) tension
www.SiliconStandard.com 2 of 2 FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/W O 10.01 0.1 10 1000.1 100 T, PULSE DURATION, sec. FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT. (A) 0 20 40 60 80 100 120 140 180 200 160 2.0 1.0 3.0 4.0 5.0 6.0 7.0 8.0 AMBIENT TEMPERATURE. ( C) o 1.1 x 1.0" (30 x 30Mmm) COPPER PADS
60 Hz RESISTIVE OR
INDUCTIVE LOAD GROUND PLANE 1 . 0X1 . 0 " (25.4 X 25.4mm) COPPER SURFACE AREA 0.050"(1.27mm) min. ALTERNATE P.C.B. FIG.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORDWARD CURRENT AMPERES INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0.1 0.01 100 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE FIG.3- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT MICROAMPERES 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 0.1 0.01 100 Tj=125 C0 Tj=25 C0 Tj=100 C0 FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 0 20 40 60 80 100 120 140 180 200 160 4.0 8.0 LEAD TEMPERATURE. ( C) o INDUCTIVE LOADL=0.125" (3.18mm)L=0.25" (6.35mm) L=0.375" (9.5mm) L=0.625" (15.8mm) BOTH LEADS ATTACHED as HEAT SINKS WITH LENGTH as SHOWN, L FIG.5- MAXIMUM PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 0.1 1.0 10 100 600 NUMBER OF CYCLES AT 60Hz V may be APPLIED BETWEEN EACH CYCLE of SURGE, the Tj NOTED is Tj PRIOR to SURGE RRM Tj=25 C0 Tj=150 C NON-REPETITIVE Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. RATINGS AND CHARACTERISTIC CURVES 8/26/2004 Rev.1.01 TS750-TS758