TRB65 TRSYS

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Technical content

APPLICATIONS KEY PARAMETERS @ Rectification. rem pooon F(AV) Ml Freewheel Diode. ley 31000A @ DC Motor Control. @ Power Supplies. @ Welding. ™@ Battery Chargers.

FEATURES

™@ Double Side Cooling. @ High Surge Capability. VOLTAGE RATINGS Type Number Repetitive Peak Conditions Reverse Voltage Ver Vv TRBES 45 4500 Vasu = Van + 100V TRB65 44 4400 TRB65 42 4200 TRB65 40 4000 TRB65 38 3800 TRB65 36 3600. Lower voltage grades available. Outline type code: DO200AD. See Package Details for further information. CURRENT RATINGS Double Side Cooled Continuous (direct) forward current Toase = 100°C 2800 Single Side Cooled (Anode side) Continuous (direct) forward current Toase = 100°C

Ves Surge (non-repetitive) forward current 10ms half sine; T,,,, = 150°C 24.8 kA rt Pt for fusing Vp = 50% Viny - 1/4 sine 3.075 x 10°| A’s leu Surge (non-repetitive) forward current 10ms half sine; T.,.,.= 150°C 31.0 kA Pt for fusing V,=0 4.8 x 10° THERMAL AND MECHANICAL DATA I Double side cooled le | | 0.013 Rage Thermal resistance - junction to case Anode de 0.025 | °C/W Single side cooled Cathode de 0.027 | °C/W . Double side |. | 0.003 Raven) Thermal resistance - case to heatsink clamping force 16-OKN d ig comps Single side | 0.006 Forward (conducting) | = | 180 | vo | T, Virtual junction temperature Reverse (book) p= p< Toy Storage temperature range -55 175 °c - Clamping force 40.0 | 48.0 kN CHARACTERISTICS View Forward voltage At 3000A peak, T.,.,, = 25°C 1.45 Vv team Peak reverse current At Vern Tease = 150°C. 150 mA |, = 150A, dl,./dt = 25A/us Po [rateinenares | Cie Toase = 25C, V = 100V Vio Threshold voltage AtT,,= 1500 0.84 Vv ry Slope resistance AtT,, = 1500 0.19 | mQ

= 6000 4 fs

3 T, = 150C

© 4000 i een feieliner/t . / 2000 tt 0 1.0 2.0 3.0 Instantaneous forward voltage V.. - (V) Fig.1 Maximum (limit) forward characteristics

~ SSSESHHHHEEEEEECEEE Stine de ia : 3 phase : [J “y 6000 3 6 phase : fei ft os) am anes ates a § 4000 A /|

0 VA ae

Mean forward current I-iay) - (A) Fig.2 Dissipation curves

Pt=Pxt ~e 50 —V,=0 6 = sms Ves = 50% Vey © 40 5 z & 30 4g 2 zg id é = 20 i: 3 x x J 3 — 4 eetimetii i} 1 1 10 1 23 5 10 20 50 VEE ms Cycles at 50Hz Duration Fig.3 Surge (non-repetitive forward current vs time (T,,,. = 150C) 0.41 Pe eee = ae | S001 —a Double side cooled g Ey a

5 ATI

®& 0.001 - - - Conduction Effective thermal resistance Junction to case CW Double side Anode side d.c. 0.0130 0.0250 Halfwave = 0.0141 0.0261 3 phase 1200 0.0170 0.0290 6 phase 604 0.0200 0.0320 0.0001 — 0.001 0.01 0.41 1 10 100 Time - (s) Fig.4 Maximum (limit) transient thermal impedance - junction to case - (C/W)