TR25 TRSYS

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TR2.5 SERIES SILICON TRIACS l Sensitive Gate Triacs l 2.5 A RM S l Glass Passivated Wafe r l 400 V to 800 V Off-State Voltage l Max IG T of 5 mA (Quadrant 1) MT1 MT2 G TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 100 mA/°C . 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms . RATIN G SYMBO L VALU E UNIT Repetitive peak off-state voltage (see Note 1) TR2.5-400-14 TR2.5-600-14 TR2.5-700-14 TR2.5-800-14 VDR M 400 600 700 800 V Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS ) 2.5 A Peak on-state surge current full-sine-wave (see Note 3) ITS M 12 A Peak on-state surge current half-sine-wave (see Note 4) ITS M 14 A Peak gate current IG M ±0.2 A Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 ms) PG M 1.3 W Average gate power dissipation at (or below) 85°C case temperature (see Note 5) PG(AV ) 0.3 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C Lead temperature 1.6 mm from case for 10 seconds TL 230 °C electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETE R TEST CONDITION S MIN TY P MA X UNIT IDR M Repetitive peak off-state current VD = rated VDR M IG = 0 TC = 110°C ±1 m A IGT M Peak gate trigger current Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† R L = 10 W R L = 10 W R L = 10 W R L = 10 W tp(g) > 20 ms tp(g) > 20 ms tp(g) > 20 ms tp(g) > 20 ms -10 m A VGT M Peak gate trigger voltage Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† R L = 10 W R L = 10 W R L = 10 W R L = 10 W tp(g) > 20 ms tp(g) > 20 ms tp(g) > 20 ms tp(g) > 20 ms 0.9 -1.2 -1.2 1.2 2.5 -2.5 -2.5 V † All voltages are with respect to Main Terminal 1.

TR2.5 SERIES SILICON TRIACS † All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 W , tp(g) = 20 ms, tr = £ 15 ns, f = 1 kHz. VTM Peak on-state voltage ITM = ±3.5 A IG = 50 m A (see Note 6) ±1.9 V IH Holding current Vsupply = +12 V† Vsupply = -12 V† IG = 0 IG = 0 Init’ ITM = 100 mA Init’ ITM = - 100 m A -30 m A IL Latching current Vsupply = +12 V† Vsupply = -12 V† (see Note 7) 40 -40 m A dv/dt Critical rate of rise of off-state voltage VDR M = Rated VDR M IG = 0 TC = 110°C ±50 V/µs dv/dt(c) Critical rise of commutation voltage VDR M = Rated VDR M ITR M = ±3.5 A TC = 85°C ±2 V/µs thermal characteristics PARAMETE R MIN TY P MA X UNIT R qJC Junction to case thermal resistance 10 °C/W R qJA Junction to free air thermal resistance 62.5 °C/W electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETE R TEST CONDITION S MIN TY P MA X UNIT

TR-2.5 SERIES SILICON TRIACS TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A TO220 ALL LINEAR DIMENSIONS IN MILLIMETERS ø 1,23 1,32 4,20 4,70 1 2 3 0,97 0,61 see Note C see Note B 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 VERSION 2 VERSION 1 NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.