TR2002SF TRSYS
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ELECTRONICS PP . LIMITED Rectifier Diode APPLICATIONS KEY PARAMETERS @ Rectification. rem pooon F(AV) Ml Freewheel Diode. ley 41250A @ DC Motor Control. @ Power Supplies. @ Welding. ™@ Battery Chargers.
FEATURES
™@ Double Side Cooling. @ High Surge Capability. VOLTAGE RATINGS Type Number Repetitive Peak Conditions Reverse Voltage Ver Vv TR2002SF18 1800 Vasu = Van + 100V TR2002SF17 1700 TR2002SF16 1600 TR2002SF15 1500 TR2002SF14 1400 TR2002SF13 1300 Lower voltage grades available. Outline type code: F See Package Details for further information. CURRENT RATINGS Double Side Cooled Continuous (direct) forward current Toase = 100°C 3300 Single Side Cooled (Anode side) Continuous (direct) forward current Toase = 100°C 1630
Pome [renner nef Ves Surge (non-repetitive) forward current 10ms half sine; T.,,,= 175°C 33.0 kA Pt Pt for fusing Va = 50% Vay - 1/4 sine 5.44x10° | A’s leu Surge (non-repetitive) forward current 10ms half sine; T.,,.= 175°C 41.25 kA THERMAL AND MECHANICAL DATA CCC fs ame SE ES HSS Rage) Thermal resistance - junction to case set Single side cooled Cathode de 0.052 | °C/W SaaS see SEE eves | [one || oo T, Virtual junction temperature reeweeo i Toy Storage temperature range -55 200 °C - Clamping force 18.0 | 22.0 kN CHARACTERISTICS [sim [Poem De [Jo View Forward voltage At 3400A peak, T.,.,, = 25°C - 1.18 Vv ley Peak reverse current At Voyyy Tease = 175°C : | 50 | ma Total stored charge | = 2000A, dl,,/dt = 3A/us | tm | Peak recovery current Thos = 175C, V = 100V | | | a |
Measured under pulse conditions Gnesi : SESSLER Heceae at foOoeaat 5 6000 / z S T,=175C 2 | Q g co} 2 4000 2000 dina eee 0) scsecdaaai ifeieasaataiiiiie 0.5 1.0 1.5 2.0 Instantaneous forward voltage V, -(V) Fig.1 Maximum (limit) forward characteristics
ib States ecttnan aan meme Pee ne 5000 y Z Bed ee a ae bist el att Gated anes uber aticenie geet ete eee iden and ane fr Aue ae ea 8 3000 L Pe eA | AA soo / AWA oy ee Genrer nH enST EE % 1000 2000 3000 4000 5000 Mean forward current |.) - (A) Fig.2 Dissipation curves
Conditions: T,=175C |. = 2000A _ V,= 100V g pail 2 1000 b> £ —— kk ° | BR / s Qs 2) = diJ/at lan 100 0.1 1.0 10 100 Rate of decay of on-state current dl,/dt - (A/s) Fig.3 Maximum total stored charge 1000 Conditions: T-175C |, = 2000A _ V, = 100V 5 LO £ 100 a c 0.1 1.0 10 100 Rate of decay of forward current di,/dt - (Ajus) Fig. 4 Maximum reverse recovery current
60 5, Mt=Pxt ~ 2 = 50 ©& 40 3 N zB g zB z 30 = Pa 2 2 2 20 i 6a = S
5 Ser 1
i “| x oO 4a @ 10 33 0 1 1 10 1 235 10 20 50 VEY ms Cycles at 50Hz Duration Fig. 5 Surge (non-repetitive) forward current vs time (with 50% Vani Tease = 175C) 0.1 = Conduction Effective thermal resistance = Junction to case C/W
5 Double side Single side Anode side cooled
o d.c. 0.022 0.038 8 Halfwave 0.024 0.040 2 3phase 1200 0.026 0.042 s 6 phase 600 0.027 0.043
3 Double side cooled
g e no} Qa os E coy 0.00: $$$ 3.001 0.01 0.1 1.0 10 Time - (s) Fig. 6 Transient thermal impedance - junction to case - (C/W)
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes @3.6x2.0 deep (in both electrodes) I| if ia \\ i *o } | \\N Y Cathode — O76 max < > <y ©48 nom » eee S58 aq SS —— __ v le @48 nom a Anode Nominal weight: 500g Clamping force: 19.6kN + 10% Package outline type code: F