TR16 TRSYS
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Technical content
l High Current Triac s l A RM S l Glass Passivated Wafe r l 400 V to 800 V Off-State Voltag e l 125 A Peak Curren t l Max I G T of mA (Quadrants MT1 MT2 G TO-220 PACKAGE (TOP VIEW) Pin is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted NOTES: These values apply bidirectionally for any value of resistance between the gate and Main T erminal This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium RATIN G SYMBO L VALU E UNI T Repetitive peak off-state voltage (see Note TR16-400-125 TR16-600-125 TR16-700-125 TR16-800-125 V DR M 400 600 700 V Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note I T(RMS A Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note I TS M A Peak gate curren t I G M A Operating case temperature rang e T C -40 to +11 C Storage temperature rang e T st g -40 to +12 C Lead temperature 1.6 mm from case for second s T L C electrical characteristics at 25°C case temperature (unless otherwise noted PARAMETE R TEST CONDITION S MI N TY P MA X UNI T I DR M Repetitive peak off-state curren t V D rated V DR M I G T C 110° C m A I G T Gate trigger curren t V suppl y +12 V V suppl y +12 V V suppl y -12 V V suppl y -12 V R L W R L W R L W R L W t p(g m s t p(g m s t p(g m s t p(g m s -19 -16 -50 -50 m A V G T Gate trigger voltag e V suppl y +12 V V suppl y +12 V V suppl y -12 V V suppl y -12 V R L W R L W R L W R L W t p(g m s t p(g m s t p(g m s t p(g m s 0.8 -0.8 -0.8 V V T On-state voltag e I T M ±22.5 A I G 50m A (see Note ±1. ±1. V I H Holding curren t V suppl y +12 V V suppl y -12 V I G I G Init’ I T M 100 mA Init’ I T M -100 m A m A All voltages are with respect to Main Terminal NOTE This parameter must be measured using pulse techniques, t p ms, duty cycle Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body
† All voltages are with respect to Main Terminal 1. Figure 1. Figure 2.
Figure 3. Figure 4.