TPR700 ETC1
Document overview
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Technical content
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 TPR 700
700 Watts, 50 Volts, Pulsed
The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input returns for fast rise time. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55KT, Style 1 Common Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 2050 Wattso2 Maximum Voltage and Current BVces Collector to Base Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 55 Amps Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg η c tr VSWR Power Out Power Input Power Gain Collector Efficiency Rise Time Load Mismatch Tolerance F = 1090 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1090 MHz 700 6.7 150 30:1 Watts Watts dB ns BVebo BVces hFE θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 50mA Ic = 100mA Ic = 1000mA, Vce = 5 V 3.5 0.08 Volts Volts C/W o Note 1: At rated output power and pulse conditions 2: At rated pulse conditions 3: Cannot measure due to input return Issue February 1996