TP0610K-T1-E3 VISHAY
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 8
Technical content
Document Number: 71411 S10-1476-Rev. H, 05-Jul-10 www.vishay.com P-Channel 60 V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET ® Power MOSFET High-Side Switching Low On-Resistance: 6 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Low Input Capacitance: 20 pF (typ.) 2000 V ESD Protection Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. Battery Operated Systems Power Supply Converter Circuits Solid-State Relays BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. PRODUCT SUMMARY VDS (V) R DS(on) ()V GS(th) (V) I D (mA) - 60 6 at V GS = - 10 V - 1 to - 3 - 185 Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability TO-236 (SOT-23) Top View S D G TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TA = 25 °C ID - 185 mATA = 100 °C - 115 Pulsed Drain Currentb IDM - 800 Power Dissipationa TA = 25 °C PD 350 mWTA = 100 °C 140 Maximum Junction-to-Ambienta RthJA 350 °C/ W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
www.vishay.com Document Number: 71411 S10-1476-Rev. H, 05-Jul-10 Vishay Siliconix TP0610K Notes: a. Pulse test: PW 300 µs duty cycle 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. a Max. Static Drain-Source Breakdown Voltage V DS VGS = 0 V, ID = - 10 µA - 60 V Gate-Threshold Voltage V GS(th) VDS = VGS, ID = - 250 µA - 1 - 3 Gate-Body Leakage I GSS VDS = 0 V, VGS = ± 20 V ± 10 µA VDS = 0 V, VGS = ± 10 V ± 200 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current I DSS VDS = - 60 V, VGS = 0 V - 25 VDS = - 60 V, VGS = 0 V, TJ = 85 °C - 250 On-State Drain Currenta ID(on) VGS = - 10 V, VDS = - 4.5 V - 50 mA VGS = - 10 V, VDS = - 10 V - 600 Drain-Source On-Resistancea RDS(on) VGS = - 4.5 V, ID = - 25 mA 10 VGS = - 10 V, ID = - 500 mA 6 VGS = - 10 V, ID = - 500 mA, TJ =125 °C 9 Forward Transconductancea gfs VDS = - 10 V, ID = - 100 mA 80 mS Diode Forward Voltage V SD IS = - 200 mA, VGS = 0 V - 1.4 V Dynamic Total Gate Charge Q g VDS = - 30 V, VGS = - 15 V ID - 500 mA 1.7 nCGate-Source Charge Q gs 0.26 Gate-Drain Charge Q gd 0.46 Input Capacitance C iss VDS = - 25 V, VGS = 0 V f = 1 MHz pFOutput Capacitance C oss 10 Reverse Transfer Capacitance C rss 5 Switchingb Tur n-On Time t d(on) VDD = - 25 V, RL = 150 ID - 200 mA, VGEN = - 10 V, Rg = 10 ns Turn-Off Time t d(off) 35
Document Number: 71411 S10-1476-Rev. H, 05-Jul-10 www.vishay.com Vishay Siliconix TP0610K TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 012345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 10 V 5 V 4 V 6 V 7 V 8 V 0 200 400 600 800 1000 ID - Drain Current (mA) VGS = 4.5 V VGS = 10 V - On-Resistance (Ω)RDS(on) VGS = 5 V ID = 500 mA - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 30 V VDS = 48 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 300 600 900 1200 0246 8 10 VGS - Gate-to-Source Voltage (V) - Drain Current (mA)ID TJ = - 55 °C 125 °C 25 °C 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss VGS = 0 V 0.0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 10 V at 500 mA VGS = 4.5 V at 25 mA RDS(on) - On-Resistance (Normalized)
www.vishay.com Document Number: 71411 S10-1476-Rev. H, 05-Jul-10 Vishay Siliconix TP0610K TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locatio ns. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71411. Source-Drain Diode Forward Voltage Threshold Voltage Variance Over Temperature 1.2 1.5 100 1000 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 125 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = - 55 °C VGS = 0 V - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 VGS(th) Variance (V) ID = 250 µA TJ - Junction Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power, Junction-to-Ambient 0246 8 10 V GS - Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA RDS(on) - On-Resistance (Ω) 0.01 2.5 100 6000.1 Power (W) Time (s) 1.5 0.5 TA = 25 °C Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 00601110-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM
Package Information
Document Number: 71196 09-Jul-01 www.vishay.com SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.0 35 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0 346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.08 3 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0 374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479
Document Number: 72609 www.vishay.com Revision: 21-Jan-08 25 APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to Index Return to Index
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