TP0610K

TP0610K VISHAY

Document overview

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Technical content

Vishay SiliconixNew Product Document Number: 71411 S-04279—Rev. C, 16-Jul-01 www.vishay.com 11-1 P-Channel 60-V (D-S) MOSFET /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 V(BR)DSS(min) (V) rDS(on) (/C0087) VGS(th) (V) ID (mA) –60 6 @ VGS = –10 V –1 to –3.0 –185 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068High-Side Switching /C0068Low On-Resistance: 6 Ω /C0068Low Threshold: –2 V (typ) /C0068Fast Swtiching Speed: 20 ns (typ) /C0068Low Input Capacitance: 20 pF (typ) /C0068Gate-Source ESD Protection /C0068Ease in Driving Switches /C0068Low Offset (Error) Voltage /C0068Low-Voltage Operation /C0068High-Speed Circuits /C0068Easily Driven Without Buffer /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Power Supply Converter Circuits /C0068Solid State Relays TO-236 (SOT-23) Top View S D G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol Limit Unit Drain-Source Voltage VDS –60 Gate-Source Voltage VGS /C003420 V TA = 25/C0095C –185 Continuous Drain Currenta TA = 100/C0095C ID –115 mA Pulse Drain Currentb IDM –800 TA = 25/C0095C 350 Power Dissipationa TA = 100/C0095C PD 140 mW Maximum Junction-to-Ambienta R thJA 350 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature.

Vishay Siliconix New Product www.vishay.com 11-2 Document Number: 71411 S-04279— Rev. C, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 µA –60 Gate-Threshold Voltage VGS(th) VDS = VGS , ID = –250 µA –1 –3.0 V VDS = 0 V, VGS = /C003420 V /C003410 /C0109A VDS = 0 V, VGS = /C003410 V /C0034200 Gate-Body Leakage IGSS VDS = 0 V, VGS = /C003410 V, TJ = 85/C0095C /C0034500 VDS = 0 V, VGS = /C00345 V /C0034100 nA VDS = –50 V, VGS = 0 V –25 Zero Gate Voltage Drain Current IDSS VDS = –50 V, VGS = 0 V, TJ = 85/C0095C –250 VDS = –10 V, VGS = –4.5 V –50 On-State Drain Currenta ID(on) VDS = –10 V, VGS = –10 V –600 mA VGS = –4.5 V, ID = –25 mA 10 Drain-Source On-Resistancea rDS(on) VGS = –10 V, ID = –500 mA 6 /C0087DS(on) VGS = –10 V, ID = –500 mA, TJ = 125/C0095C 9 Forward Transconductancea gfs VDS = –10 V, ID = –100 mA 80 mS Diode Forward Voltagea VSD IS = –200 mA, VGS = 0 V –1.4 V Dynamic Total Gate Charge Q g 1.7 Gate-Source Charge Q gs VDS = –30 V, VGS = –15 V, ID /C0094 –500 mA 0.26 nC Gate-Drain Charge Q gd DS GS D 0.46 Input Capacitance C iss 23 Output Capacitance C oss VDS = –25 V, VGS = 0 V, f = 1 MHz 10 pF Reverse Transfer Capacitance C rss DS GS Switchingb Turn-On Time tON VDD = –25 V, RL = 150 /C0087 /C0094 Turn-Off Time tOFF ID /C0094 –200 mA, VGEN = –10 V R G = 10 /C0087 35 ns Notes a. Pulse test: PW /C0118300 ms duty cycle /C01182%. TPJO60 b. Switching time is essentially independent of operating temperature.

Vishay SiliconixNew Product Document Number: 71411 S-04279— Rev. C, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0078/C0079/C0084/C0069/C0068/C0041 300 600 900 1200 02468 1 0 0.0 0.2 0.4 0.6 0.8 1.0 012345 Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) – Drain Current (A)ID VGS = 10 V 5 V 4 V VGS – Gate-to-Source Voltage (V) – Drain Current (mA)ID TJ = –55/C0095C 125/C0095C 25/C0095C 0.0 0.3 0.6 0.9 1.2 1.5 1.8 –50 –25 0 25 50 75 100 125 150 On-Resistance vs. Junction Temperature TJ – Junction Temperature (/C0095C) VGS = 10 V @ 500 mA VGS = 4.5 V @ 25 mA (Normalized) – On-Resistance (rDS(on) /C0087) ID = 500 mA Gate Charge – Gate-to-Source Voltage (V) Q g – Total Gate Charge (nC) V GS 0 200 400 600 800 1000 On-Resistance vs. Drain Current ID – Drain Current (mA) VGS = 4.5 V VGS = 10 V – On-Resistance (rDS(on) /C0087) 0 5 10 15 20 25 Capacitance VDS – Drain-to-Source Voltage (V) C – Capacitance (pF) C rss C oss C iss VGS = 0 V 6 V 7 V VGS = 5 V VDS = 30 V VDS = 48 V 8 V For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.

Vishay Siliconix New Product www.vishay.com 11-4 Document Number: 71411 S-04279— Rev. C, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0078/C0079/C0084/C0069/C0068/C0041 02468 1 0 On-Resistance vs. Gate-Source Voltage VGS – Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA – On-Resistance (rDS(on) /C0087) 1.2 1.5 100 1000 0.00 0.3 0.6 0.9 TJ = 25/C0095C TJ = 125/C0095C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) – Source Current (A)IS TJ = –55/C0095C VGS = 0 V Threshold Voltage Variance Over Temperature Variance (V)V GS(th) –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 –50 –25 0 25 50 75 100 125 150 ID = 250 /C0109A TJ – Junction Temperature (/C0095C) 10–3 10–2 1 10 60010–110–4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: 4. Surface Mounted PDM 0.01 2.5 100 6000.1 Power (W) Single Pulse Power, Junction-to-Ambient Time (sec) 1.5 0.5 TA = 25/C0095C For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.