TLP630 TOSHIBA

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Technical content

TOSHIBA Photocoupler GaAs IRed & Photo− T ransistor TLP630 Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA TLP630 consists of a photo−transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead plastic DIP package.

  • Collector−emitter voltage: 55V min.
  • Current transfer ratio: 50% min. Rank GB: 100% min.
  • Isolation voltage: 5000Vrms min.
  • UL recognized: UL1577 file no. E67349 Pin Configurations(top view) Unit in mm TOSHIBA 11 −7A8 Weight: 0.4g

Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF(RMS) 60 mA LED Forward current derating (Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse,100pps) I FPT ±1 A Collector−emitter voltage VCEO 55 V Collector−base voltage VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage VEBO 7 V Collector current IC 50 mA Power dissipation PC 150 mW Detector Power dissipation derating (Ta ≥ 25°C) ΔP C / °C −1.5 mW / °C Operating temperature range Topr −55~100 °C Storage temperature range Tstg −55~125 °C Lead soldering temperature Tsol 260(10s) °C Junction temperature Tj 125 °C Total package power dissipation PT 250 mW Total package power dissipation derating ΔP T / °C −2.5 mW / °C Isolation voltage (AC, 1 min., R.H. ≤ 60%) BV S 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF(RMS) ― 16 25 mA Collector current IC ― 1 10 mA Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Forward current IF V F = 0.7V ― 2.5 10 μA LED Capacitance C T V = 0, f = 1MHz ― 60 ― pF Collector−emitter breakdown voltage V(BR)CEO IC = 0.5mA 55 ― ― V Emitter−collector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V Collector−base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter−base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA Collector dark current ID(ICEO) VCE = 24V, Ta = 85°C ― 2 50 μA Collector dark current ICBO V CB = 10V ― 0.1 ― nA Detector Capacitance (collector to emitter) CCE V = 0, f = 1MHz ― 10 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit 50 ― 600 Current transfer ratio IC / IF IF = ±5mA, VCE = 5V Rank GB 100 ― 600 ― 60 ― Saturated CTR IC / IF(sat) IF = ±1mA, VCE = 0.4V Rank GB 30 ― ― Base photo−current I PB I F = ±5mA, VCB = 5V ⎯ 10 ― μA Collector−emitter saturation voltage VCE(sat) IC = 2.4mA, IF = ±8mA ― ― 0.4 V Off−state collector current IC(off) VF = ±0.7V, VCE = 24V ― 1 10 μA CTR symmetry IC(ratio) IC(IF = −5mA) / IC(IF = +5mA) (Note 1) 0.33 1 3 ― (Note 1) I C(ratio) = 5V)CE VF1,IF(IC1I 5V)CE VF2,IF(IC2I

Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) CS VS = 0, f = 1MHz ― 0.8 ― pF Isolation resistance RS V S = 500V, R.H. ≤ 60% 5 ×10 ― Ω AC, 1 minute 5000 ― ― AC, 1 second, in oil ― 10000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 10000 ― Vdc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time tr ― 2 ― Fall time tf ― 3 ― Turn−on time t ON ― 3 ― Turn−off time t OFF VCC = 10V, IC = 2mA RL = 100Ω ― 3 ― μs Turn−on time t ON ― 2 ― Storage time tS ― 15 ― Turn−off time t OFF RL = 1.9 kΩ (Note 2) RBE = OPEN VCC = 5 V, IF = ±16mA ― 25 ― μs Turn−on time t ON ― 2 ― Storage time tS ― 12 ― Turn−off time t OFF RL = 1.9kΩ (Note 2) RBE = 220kΩ, VCC = 5 V IF = ±16mA ― 20 ― μs (Note 2) Switching time test circuit

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.