TC3967 ETC1
Document overview
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Technical content
REV .1_04/27/2005 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1/1 2W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
- 2W Typical Output Power
- 12.5dB Typical Linear Power Gain at 2.45GHz
- High Linearity: IP3 = 43 dBm Typical
- High Power Added Efficiency: Nominal PAE of 35%
- Breakdown V oltage: BVDGO ≥ 15V
- Wg = 5 mm
- 100 % DC Tested
- Suitable for High Reliability Application
- Lost Cost Ceramic Package
DESCRIPTION
The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is designed to provide the single power supply application. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (@ 2.45 GHz) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point VDS = 8 V dBm GL Linear Power Gain VDS = 8 V 12.5 dB IP3 Intercept Point of the 3rd-order Intermodulation VDS = 8 V, *PSCL = 20 dBm 43 dBm PAE Power Added Efficiency at 1dB Compression Power 35 % IDS Drain-Source Current at V DS = 8 V 600 mA BVDGO Drain-Gate Breakdown Voltage at I DGO = 1.2mA 15 18 V olts Rth Thermal Resistance 8 °C/W Note: *PSCL: Output Power of Single Carrier Level. PHOTO ENLARGEMENT