TC1101 ETC2

Document overview

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Technical content

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 January 2002 Low Noise and Medium Power GaAs FETs

FEATURES

  • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
  • High Associated Gain: Ga = 12 dB Typical at 12 GHz
  • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz
  • Breakdown V oltage: BVDGO ≥ 9 V
  • Lg = 0.25 µm, Wg = 160 µm
  • All-Gold Metallization for High Reliability
  • 100 % DC Tested

DESCRIPTION

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (T A=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at V DS = 2 V, IDS = 10 mA, f = 12GHz 0.5 0.7 dB Ga Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz 10 12 dB P1dB Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 4 V, IDS = 25 mA 17 18 dBm GL Linear Power Gain, f = 12GHz VDS = 4 V, IDS = 25 mA 12 14 dB IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 40 mA gm Transconductance at VDS = 2 V, VGS = 0 V 55 mS VP Pinch-off V oltage at VDS = 2 V, ID = 0.32 mA -1.0 V olts BVDGO Drain-Gate Breakdown V oltage at IDGO =0.08 mA 9 12 V olts Rth Thermal Resistance 90 °C/W PHOTO ENLARGEMENT

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 G D SS 250 ± 12 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source Voltage 7.0 V VGS Gate-Source V oltage -3.0 V IDS Drain Current I DSS IGS Gate Current 160 µA Pin RF Input Power, CW 14 dBm PT Continuous Dissipation 150 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C TYPICAL NOISE PARAMETERS (TA=25 °°°°C) VDS = 2 V , IDS = 10 mA ΓoptFrequency (GHz) NFopt (dB) GA (dB) MAG ANG Rn/50 2 0.38 19.8 0.99 4 1.52 4 0.40 17.5 0.90 9 1.05 6 0.42 15.6 0.82 18 0.77 8 0.45 13.9 0.76 29 0.61 10 0.50 13.1 0.69 43 0.51 12 0.55 12.4 0.63 55 0.44 14 0.64 11.7 0.56 65 0.37 16 0.78 11.1 0.45 76 0.30 18 0.95 10.6 0.34 90 0.24 CHIP DIMENSIONS Units: Micrometers Gate Pad: 55 x 50 Chip Thickness: 100 Drain Pad: 55 x 50 Source Pad: 55 x 60

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETERS (TA=25 °°°°C) VDS = 2 V , IDS = 10 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

  • The data does not include gate, drain and source bond wires. 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max

18 GHz

2 GHz

-180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max 0.15 0.075 Per Div S12 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETERS (TA=25 °°°°C) VDS = 4 V , IDS = 25 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

  • The data does not include gate, drain and source bond wires. 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max

0.1 0.01 Per Div S12 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 SMALL SIGNAL MODEL, VDS = 2 V , IDS = 10 mA Cgs Cgd Cds Rg Rd RdsRi Rs Gm T Lg Ld Ls PARAMETERS Parameters Parameters Lg 0.04708 nH Rs 1.29 Ohm Rg 1.46 Ohm Ls 0.001 nH Cgs 0.207 pF Cds 0.0684 pF Ri 3.68 Ohm Rds 321.5 Ohm Cgd 0.0269 pF Rd 1.525 Ohm Gm 54.8 mS Ld 0.0379 nH T 3.34 psec SMALL SIGNAL MODEL, VDS = 4 V , IDS = 25 mA Cgs Cgd Cds Rg Rd RdsRi Rs Gm T Lg Ld Ls PARAMETERS Parameters Parameters Lg 0.04708 nH Rs 1.25 Ohm Rg 1.46 Ohm Ls 0.001 nH Cgs 0.254 pF Cds 0.0666 pF Ri 5.91 Ohm Rds 377.8 Ohm Cgd 0.0192 pF Rd 1.525 Ohm Gm 66.0 mS Ld 0.0379 nH T 3.64 psec SCHEMATIC SCHEMATIC

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V .