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  • Medium current Triac * High static and dynamic commutation * Low thermal resistance with clip bonding * 600 V VRM Part number Symbol Value T8M10T-600 IGT 3Q logic level 10 mA T8M20T-600 T8M35T-600 IGT 3Q Snubberless 20 / 35 mA T8M25T-600 IGT 4Q standard 25 mA T8M20T-600 TO-220 50pcs / Tube T8M35T-600 TO-220 50pcs / Tube T8M25T-600 TO-220 50pcs / Tube TRIAC Current Sensitivity Application specific Voltage 8 = 8 A 10 = 10 mA 20 = 20 mA 25 = 25 mA 6 = 600 V 35 = 35 mA T 8M 8 T 600

Mar.2015-REV.01 www.sddydz.com Absolute Maximum Ratings (limiting values; Tj = 25 °C, unless otherwise specified) 8A TRIACS Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) Tc = 97 °C 8 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz t p = 20 ms 60 A F = 60 Hz t p = 16.7 ms 63 I²t ²t I Value for fusing tp = 10 ms 26 A ²s dI/dt Critical rate of rise of on-state current I G = 2 x IGT tr ≤ 100 ns F = 60 Hz T j = 125 °C 50 A/µs VDSM, VRSM Non repetitive surge peak off-state voltage t p = 10 ms T j = 25 °C VDRM, VRRM + 100 V IGM Peak gate current tp = 20 µs T j = 125 °C 4 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tstg Storage junction temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 °C Electrical characteristics (T j = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant T8MxxT Unit T8M10T T8M20T T8M25T T8M35T IGT (1) VD = 12 V, RL = 30 Ω I - II - III MAX. 10 20 25 35 mA IV 40 VGT VD = VDRM, RL = 30 Ω, Tj = 25 °C ALL MAX. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. 15 25 30 40 mA IL IG = 1.2 IGT I - III MAX. 20 35 40 50 mAIV 40 II 25 40 70 70 dV/dt (2) VD = 67% VDRM, gate open Tj = 125 °C MIN. 100 750 500 2000 V/µs Tj = 150 °C(3) 50 500 300 1000 (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125 °C MIN. 5.4 A/ms (dV/dt)c = 10 V/µs 2 4.5 Without snubber 3.4 8 (dV/dt)c = 0.1 V/µs Tj = 150 °C(3) 2.5 (dV/dt)c = 10 V/µs 1 2 Without snubber 2 6.5 1. Minimum I GT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1. 3. Derating information for excess temperature above T j max. T8MxxT600 Series

3 of 6 Mar.2015-REV.01 www.sddydz.com Static characteristics Symbol Test conditions Value Unit VT (1) ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.60 V VTO (1) Threshold voltage Tj = 125 °C MAX. 0.87 V RD (1) Dynamic resistance Tj = 125 °C MAX. 60 m Ω IDRM, IRRM VDRM = VRRM Tj = 25 °C MAX. 5µ A Tj = 125 °C 1 mA VD = 0.9 x VDRM Tj = 150 °C(2) TYP . 1.9 1. For both polarities of A2 referenced to A1. 2. Derating information for excess temperature above T j max. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 2.8 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W T8MxxT600 Series

Mar,2015-REV.01 www.sddydz.com 8A TRIACS T8MxxT600 Series