T6421M ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 3
Technical content
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FEATURES
- Improvedglasspassivation forhighreliability andexceptionalstabilityathightemperature
- Highdi/dtand dv/dtcapabilities
- Lowthermalresistance
APPLICATIONS
- Medium powerswitching
- Phasecontrolapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDRM RepetitivePeakOff-stateVoltage 600 V VRRM RepetitivePeakReverseVoltage 600 V IT(AV) Max.averageforwardcurrent Tc=85℃ 180° conduction,halfsinewave 25 A ITRMS RMS forwardcurrent 40 A ITSM Non-repetitivePeakOn-stateCurrent t=10ms Novoltage reapplied 420 A t=8.3ms 440 t=10ms 100%VRRM reapplied 350 t=8.3ms 370 I2t I2tValueforFusing t=10ms Novoltage reapplied 867 A2s*103 t=8.3ms 790 t=10ms 100%VRRM reapplied 615 t=10ms Novoltage reapplied 560 di/dt Max.rateofriseofturned-oncurrent 200 A/us dv/dt Max.criticalrateofriseof 100 V/us VT(TO)1 Lowlevelvalueofthresholdvoltage (16.7%xπxIF(AV)<I<πxIF(AV)),TJ=TJmax 0.99 V VT(TO)2 Highlevelvalueofthresholdvoltage (I>π xIF(AV)),TJ=TJmax 1.40 V PGM Maximumpeakgatepower 8 W PG(AV) Maximumaveragegatepower 2.0 W TJ VirtualJunctionTemperature -65~125 ℃ Tstg StorageTemperature -65~125 ℃
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM RepetitivePeakReverseCurrent VR=VRRM,TJ=125℃ -- -- 10 mA IDRM RepetitivePeakOff-stateCurrent VD=VDRM,TJ=125℃ -- -- 10 mA VTM Forwardvoltagedrop Ipk=50A,TJ=25℃ tp=10mssinepulse -- -- 1.71 V rT1 Lowlevelvalueofforwardsloperesistance (16.7%xπxIF(AV)<I<πxIF(AV)),TJ=TJmax. -- -- 10.1 mΩ rT2 Highlevelvalueofforwardsloperesistance (16.7%xπxIF(AV)<I<πxIF(AV)),TJ=TJmax. 5.7 mΩ IGT Gate-TriggerCurrent TJ=25℃ -- -- 60 mA VGT Gate-TriggerVoltage TJ=25℃ -- -- 2.0 V VGD GateNon-triggerVoltage VDRM=ratedvalue，TJ=TJmax -- -- 0.2 V IGD GateTriggerCurrent VDRM=ratedvalue，TJ=TJmax -- -- 2.0 mA IL LatchingCurrent TJ=25°C,anodesupply12Vresistiveload -- -- 130 mA IH HoldingCurrent TJ=25℃ -- -- 200 mA Rth j-c thermalresistancejunctiontocase -- 0.75 -- ℃/W MODULE M MountingScrew -- 2.3 -- N.m Rth j-c thermalresistancejunctiontocase -- 0.75 -- ℃/W
www.iscsemi.com 3 PACKAGEOUTLINE(UNIT:mm) PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.